Method for producing a light emitting diode having transparent substrate
First Claim
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1. A method for producing a light emitting diode, the method comprising the steps of:
- epitaxially growing a first semiconductor multilayer on a first semiconductor substrate having a first conductivity type, the first semiconductor multilayer including at least one first semiconductor layer having the first conductivity type;
epitaxially growing a light emitting layer on the first semiconductor multilayer;
epitaxially growing a second semiconductor multilayer on the light emitting layer, the second semiconductor multilayer including at least one second semiconductor layer having a second conductivity type;
disposing a second substrate on the second semiconductor multilayer, the second substrate being transparent to light emitted from the light emitting layer; and
bonding the second substrate and the second semiconductor multilayer through direct bonding with heating the vicinity of an interface between the second substrate and the second semiconductor multilayer.
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Abstract
A method for producing a light emitting diode includes the steps of: forming a first semiconductor multilayer on a first semiconductor substrate having a first conductivity type; forming a light emitting layer on the first semiconductor multilayer; forming a second semiconductor multilayer; disposing a second substrate which is transparent to light emitted from the light emitting layer on the second semiconductor multilayer; and bonding the second substrate and the second semiconductor multilayer through direct bonding with heating a vicinity of an interface between the second substrate and the second semiconductor multilayer.
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Citations
17 Claims
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1. A method for producing a light emitting diode, the method comprising the steps of:
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epitaxially growing a first semiconductor multilayer on a first semiconductor substrate having a first conductivity type, the first semiconductor multilayer including at least one first semiconductor layer having the first conductivity type; epitaxially growing a light emitting layer on the first semiconductor multilayer; epitaxially growing a second semiconductor multilayer on the light emitting layer, the second semiconductor multilayer including at least one second semiconductor layer having a second conductivity type; disposing a second substrate on the second semiconductor multilayer, the second substrate being transparent to light emitted from the light emitting layer; and bonding the second substrate and the second semiconductor multilayer through direct bonding with heating the vicinity of an interface between the second substrate and the second semiconductor multilayer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for producing a light emitting device, the method of comprising the steps of:
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epitaxially growing a semiconductor multilayer on a first substrate, the semiconductor multilayer including a light emitting layer, first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type, the light emitting layer being interposed between the first semiconductor layer and the second semiconductor layer; disposing a second substrate which is transparent to light emitted from the light emitting layer on the semiconductor multilayer; bonding the second substrate and the semiconductor multilayer through direct bonding with heating a vicinity of an interface between the second substrate and the semiconductor multilayer; and removing at least part of the first substrate; and forming a pair of electrodes electrically connected to the first semiconductor layer and the second semiconductor layer, respectively.
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Specification