Circuit for controlling the maximum current in a MOS power transistor used for driving a load connected to earth

• US 5,404,053 A
• Filed: 06/09/1993
• Issued: 04/04/1995
• Est. Priority Date: 06/16/1992
• Status: Expired due to Term

• Current Assignee: Marelli Autronica SPA, SGS-Thomson Microelectronics, S.R.L. (STMicroelectronics NV)
• Original Assignee: SGS-Thomson Microelectronics, S.R.L. (STMicroelectronics NV)
• Inventors: Poletto, Vanni, Poma, Alberto, Morelli, Marco
• Primary Examiner(s): Callahan, Timothy P.
• Assistant Examiner(s): TON, MY TRANG
• Application Number:
  US08/075,056
• Time in Patent Office: 664 Days
• Field of Search: 307/270, 307/362, 307/494, 307/572, 307/578, 307/359, 307/571, 330/288, 330/257, 323/315, 323/316
• US Class Current: 327/108
• CPC Class Codes: H03F 1/523 for amplifiers using field-effect devices H03F1/526 takes precedence
• CPC Class Codes: H03K 17/063 in field-effect transistor switches
• CPC Class Codes: H03K 17/0822 in field-effect transistor switches

Abstract

An improved circuit for controlling the maximum current in a MOS power transistor, in which resistor is in series with the drain-source path of the MOS power transistor. The supply terminal of a transconductance operational amplifier is connected to the output of a voltage-raising or charge pump circuit which can output a voltage higher than that of the voltage supply to which the drain of the MOS transistor is connected. The inputs of the amplifier are connected to the resistor and its output is connected to the gate of the MOS transistor so that, in operation, the maximum current flowing through the power transistor is limited to a value proportional to a reference voltage.

Claims

1. A circuit for controlling the current in a MOS power transistor, having a source and drain, used for driving a load connected to ground, including:

a direct-current voltage supply to which said drain of the MOS transistor is connected,

a resistor in series with the drain-source path of the MOS transistor, a charge pump circuit for enabling the gate capacitance of the MOS transistor to be charged to a voltage higher than the voltage of said voltage supply, and

a transconductance operational amplifier which is connected to be powered from a supply terminals and which has an output connected to the gate of the MOS transistor and differential inputs connected to the resistor in a relationship which limits the current through the power transistor to a maximum value proportional to a reference voltage;

said charge pump circuit having an output which is connected to supply current to said supply terminal of said transconductance operational amplifier.

2. A control circuit according to claim 1, including a reference voltage generator which is outside said transconductance operational amplifier and is connected between a terminal of the resistor and an input of said transconductance operational amplifier.

3. A control circuit according to claim 2, wherein the transconductance operational amplifier includes a current-mirror circuit comprising:

a first branch circuit including two transistors of mutually complementary type between the output of the charge pump circuits and a terminal of the resistor, and

a second branch circuit, also including two respective transistors of complementary type, between the output of the charge pump circuit and the reference voltage generator.

4. A control circuit according to claim 1, wherein the transconductance operational amplifier includes a current-mirror circuit comprising:

first and second branch circuits which are disposed between the output of the charge pump circuit and respective terminals of the resistor and each of which one includes two complementary transistors of which one has a control terminal thereof connected to a first current-carrying terminal thereof to operate essentially as a diode,

at least one of the transistors which can operate as diodes having an effective area, at a second current-carrying terminal thereof, larger than those of corresponding terminals of the other transistors of the current-mirror circuit.

5. The circuit of claim 1, wherein said boosted output has a voltage which is more positive than the direct-current supply voltage, and the direct-current supply voltage is positive.

6. The circuit of claim 1, wherein said amplifier is powered exclusively by said charge pump.

7. A circuit for controlling the maximum current in a field-effect power transistor connected to drive a load with a sensing resistor in series therewith, comprising:

connections for receiving first and second power supply voltages;

a charge pump connected to receive said power supply voltages, and therefrom to generate a boosted output at a more extreme voltage than said first power supply voltage; and

a transconductance operational amplifier connected to receive the voltage across the sensing resistor as a differential input thereto, and connected to receive a supply current from said boosted output, and connected and configured to drive the gate of the power transistor either toward said boosted output, or else toward said second supply voltage, in accordance with said differential input;

whereby the current through said power transistor is prevented from exceeding a predetermined maximum value.

8. The circuit of claim 7, wherein the first power supply voltage is more positive than the second power supply voltage.

9. The circuit of claim 7, wherein said boosted output has a voltage which is more positive than the first power supply voltage, and the first power supply voltage is more positive than the second power supply voltage.

10. The circuit of claim 7, wherein said amplifier receives said differential input at the emitters of a pair of bipolar transistors which have bases thereof connected together.

11. The circuit of claim 7, wherein said amplifier receives said differential input at the emitters of a first pair of transistors, which are bipolar and have bases thereof connected together, and wherein said charge pump provides said supply current to a second pair of bipolar transistors which are of opposite type to, and connected in series with, said first pair of transistors.

12. The circuit of claim 7, wherein said amplifier receives said differential input at the emitters of a first pair of transistors, which are bipolar and have bases thereof connected together and have unequal emitter areas, and wherein said charge pump provides said supply current to a second pair of bipolar transistors which are of opposite type to, and connected in series with, said first pair of transistors.

13. The circuit of claim 7, wherein said amplifier is powered exclusively by said charge pump.

14. A circuit for controlling the maximum current in a field-effect power transistor connected to drive a load with a sensing resistor in series therewith, comprising:

connections for receiving first and second power supply voltages;

a charge pump connected to receive said power supply voltages, and therefrom to generate a boosted output at a more extreme voltage than said first power supply voltage; and

a transconductance operational amplifier connected to receive the voltage across the sensing resistor as a differential input thereto, and connected to receive a supply current from said boosted output, and connected to provide an output current therefrom to the gate of the power transistor in accordance with said differential input;

wherein said amplifier includes at least a first transistor pair with unequal current densities, connected to define a voltage offset for said differential input.

15. The circuit of claim 14, wherein said boosted output has a voltage which is more positive than the first power supply voltage, and the first power supply voltage is more positive than the second power supply voltage.

16. The circuit of claim 14, wherein said amplifier receives said differential input at the emitters of a pair of bipolar transistors which have bases thereof connected together.

17. The circuit of claim 14, wherein said amplifier receives said differential input at the emitters of said first pair of transistors, which are bipolar and have bases thereof connected together and have unequal emitter areas, and wherein said charge pump provides said supply current to a second pair of bipolar transistors which are of opposite type to, and connected in series with, said first pair of transistors.

18. The circuit of claim 14, wherein said amplifier is powered exclusively by said charge pump.

19. A circuit for controlling the maximum current in a field-effect power transistor connected to drive a load with a sensing resistor in series therewith, comprising:

connections for receiving first and second power supply voltages;

a charge pump connected to receive said power supply voltages, and therefrom to generate a boosted output at a more extreme voltage than said first power supply voltage; and

a transconductance operational amplifier connected to receive the voltage across the sensing resistor as a differential input thereto, and comprising

a first branch, including

a first transistor of a first majority-carrier conductivity type, and

a first transistor of a second majority-carrier conductivity type,

said first transistors being connected in series between said boosted output and a first terminal of said resistor, and

an intermediate node between said first transistors being connected to a control terminal of the power transistor; and

a second branch, including

a second transistor of said first majority-carrier conductivity type, and

a second transistor of said second majority-carrier conductivity type,

said second transistors being connected in series between said boosted output and a second terminal of said resistor, with

said first transistors being connected in a current mirror relationship from said first branch to said second branch, and said second transistors being connected in a current mirror relationship from said second branch to said first branch.

20. The circuit of claim 19, wherein said boosted output has a voltage which is more positive than the first power supply voltage, and the first power supply voltage is more positive than the second power supply voltage.

21. A method for controlling the maximum current in a power field-effect transistor connected to drive a load, comprising the steps of:

generating a boosted voltage in a charge pump which is connected to receive first and second supply voltages;

providing a differential signal, which indicates the current passed by said power transistor, to the differential inputs of a differential amplifier which is exclusively supplied by said charge pump, and not directly connected to at least one said supply voltage, said differential amplifier being configured to provide a current output;

connecting said current output of said differential amplifier to drive a gate terminal of the power transistor.

22. The method of claim 21, wherein said boosted output has a voltage which is not within the range between said first and second power supply voltages.

23. The method of claim 21, wherein said boosted output has a voltage which is more positive than the first power supply voltage, and the first power supply voltage is more positive than the second power supply voltage.

24. The method of claim 21, wherein said amplifier receives said differential input at the emitters of a pair of bipolar transistors which have bases thereof connected together.

25. The method of claim 21, wherein said amplifier receives said differential input at the emitters of a first pair of transistors, which are bipolar and have bases thereof connected together, and wherein said charge pump provides said supply current to a second pair of bipolar transistors which are of opposite type to, and connected in series with, said first pair of transistors.

26. The method of claim 21, wherein said amplifier receives said differential input at the emitters of a first pair of transistors, which are bipolar and have bases thereof connected together and have unequal emitter areas, and wherein said charge pump provides said supply current to a second pair of bipolar transistors which are of opposite type to, and connected in series with, said first pair of transistors.