Power detector that employs a feedback circuit to enable class B operation of a detector transistor

• US 5,404,585 A
• Filed: 09/16/1992
• Issued: 04/04/1995
• Est. Priority Date: 09/19/1991
• Status: Expired due to Fees

• Current Assignee: Nokia Mobile Phones Imited (Nokia Corporation)
• Original Assignee: Nokia Mobile Phones UK Limited (Nokia Corporation)
• Inventors: Seppanen, Arto, Vimpari, Markku
• Primary Examiner(s): Urban, Edward F.
• Application Number:
  US07/945,682
• Time in Patent Office: 930 Days
• Field of Search: 455/126, 455/127, 455/115, 455/226.2, 330/265, 330/266, 330/267, 330/270, 330/273, 330/296
• US Class Current: 455/115.1
• CPC Class Codes: H03D 1/18 of semiconductor devices

Abstract

A power detector for detecting the magnitude of a radio frequency (RF) signal comprises a detector transistor (V1) which provides an output signal (DC-OUT) in dependence upon the input RF signal. The detector transistor is biased with a biasing circuit which comprises two transistors (V2,V3) in a feedback loop coupled to the base of the detector transistor (V1). The detector can be used as both current and voltage amplifier. One of the transistors (V3) in the feedback loop provides temperature compensation.

Claims

1. A power detector for detecting the magnitude of a radio frequency (RF) signal and for generating an output signal having a magnitude that is proportional to said magnitude of said RF signal, the power detector comprising:

a detector transistor;

an RF signal input coupled to a base electrode of said detector transistor; and

a bias circuit connected to said base electrode for applying a bias potential to said detector transistor to enable class B operation thereof, said bias circuit including a first transistor having a base electrode coupled to said base electrode of said detector transistor and feedback means responsive to a change in conduction through said first transistor for adjusting said bias potential to maintain said class B operation of said detector transistor, said feedback means including a first resistor connected between a bias supply and a collector of said first transistor, a resistor connecting said base electrode of said first transistor to a reference potential and a second transistor connected between said bias supply and said base electrode of said first transistor, conduction variations of said second transistor providing said adjusting of said bias potential to said detector transistor.

2. A power detector according to claim 1, wherein an output signal is obtained at an emitter of the detector transistor.

3. A power detector according to claim 1, wherein an output signal is obtained at a collector of the detector transistor.

4. The power detector as recited in claim 1, wherein a base electrode of said second transistor is connected to said collector of said first transistor to enable conduction changes in said first transistor to be sensed at said base electrode of said second transistor so that conduction changes in said first transistor are enabled to control conduction through said second transistor.