Magnetron sputtering method and apparatus for compound thin films

• US 5,405,517 A
• Filed: 12/06/1993
• Issued: 04/11/1995
• Est. Priority Date: 12/06/1993
• Status: Expired due to Fees

• Current Assignee: Curtis M. Lampkin
• Original Assignee: Curtis M. Lampkin
• Inventors: Lampkin, Curtis M.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US08/162,592
• Time in Patent Office: 491 Days
• Field of Search: 204/192.12, 204/192.15, 204/192.25, 204/192.26, 204/298.22, 204/298.26
• US Class Current: 204/192.12
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: C23C 14/562 for coating elongated substrates
• CPC Class Codes: H01J 37/3402 using supplementary magnetic fields
• CPC Class Codes: H01J 37/3429 Plural materials
• CPC Class Codes: H01J 37/3432 Target-material dispenser

Abstract

An apparatus is described for depositing a thin film (9) of compound materials on selected substrates (48) in an evacuable coating chamber. This apparatus includes a rotating primary surrogate magnetron cathode surface (19) which acts to receive, in-situ, material to be sputtered. Vapor crucibles (2) expose the rotating cathode surface (19) to material vapors (8) which condense on the thermally cooled cathode surface (19) to combine with other coatings on the cathode and are thence rotated through the associated plasma sputter zone (26P) to sputter deposit desired film (9). Auxiliary rotating magnetron cathodes (32) can deposit additional material onto rotating primary cathode (19). Molten material crucible assemblies (31) having coating rollers (34) can convey molten material onto rotating auxiliary thermally cooled cathode surfaces (32) which sputter coat primary cathode. When a selected combination of vapor crucibles (2) and auxiliary rotating cathodes (32) cooperate to coat rotating primary cathode surface (19) it is possible to deposit alloys or a large class of compound thin film materials in-situ without having to prefabricate cathodes of compound materials.

Sputter deposited film (9) uniformity is improved by use of three methods: cyclically varying power applied to the primary surrogate cathode, narrow sputter zones, and premixing of condensing vapors.

Claims

1. In apparatus for sputtering a compound thin film of selected coating materials onto selected substrates, an evacuable coating chamber, a thermally cooled rotating primary magnetron surrogate sputtering cathode, a plurality of controllable auxiliary coating means, said auxiliary coating means for coating the surface of said primary cathode with a plurality of selected materials, wherein said controllable auxiliary coating means cooperate to deposit upon said primary surrogate cathode a multi-element coating containing all necessary elements in controlled amounts, said multi-element coating being rotatable into a sputter plasma zone of said primary cathode which sputter deposits said selected compound thin film onto said substrates.

2. The apparatus of claim 1, including means for cyclically varying the sputter power to said primary surrogate cathode in a manner to improve uniformity of chemical composition of said deposited compound thin film.

3. The apparatus of claim 1, including use of an electron injection means for injecting electrons into a selected portion of said sputter plasma zone for the purpose of improving deposited film uniformity.

4. The apparatus of claim 1, wherein said means for coating the surface of said rotating primary surrogate cathode with material to be carried into a sputter deposition zone includes a plurality of heated, temperature controlled vapor sources, each of said vapor sources emitting selected material vapors through a pattern of multiple apertures into a vapor duct, said ducts being joined in a plenum chamber closely spaced to said cathode surface, said plenum providing substantial mixing of said vapors as they condense upon said surrogate rotating cathode surface in a single uniform coating layer of controlled thickness.

5. The apparatus of claim 1, wherein said means for coating the surface of said rotating primary surrogate cathode includes a plurality of heated temperature controlled vapor sources, each of said sources filled with selected material emitting vapors through a pattern of multiple apertures into an exhaust manifold, said vapor source manifolds being closely spaced to said cathode surface, causing said vapors to condense upon said surrogate rotating cathode surface in a multilayer configuration with separately controlled thicknesses of each of said layers.

6. The apparatus of claim 1, wherein said means for coating the surface of said rotating primary surrogate cathode includes rotating auxiliary magnetron surrogate sputtering cathodes which are coated by means of a selected combination of heated temperature controlled vapor sources, said sources being filled with selected material emitting vapors through a pattern of multiple apertures into an exhaust duct, said vapor source ducts being closely spaced to said cathode surface, causing said vapors to condense upon said auxiliary surrogate rotating cathode surfaces in a controlled thickness.

7. The apparatus of claim 1, wherein said means for coating the surface of said rotating primary surrogate cathode, while in an evacuable coating chamber, includes a selected combination of rotating auxiliary magnetron surrogate sputtering cathodes which are coated by means of heated molten metal crucibles having roller transport means for placing controlled amounts of a molten material upon said auxiliary cathode surface of such thickness as to provide sufficient material for at least one rotation of said auxiliary cathode while being thin enough so as to not drip when molten, thus allowing substantially higher sputtering power to be applied to said auxiliary cathode.

8. The apparatus of claim 1, wherein said means for coating the surface of said rotating primary surrogate cathode surface, while in an evacuable coating chamber, includes a heated molten material crucible having roller transport means for placing controlled amounts of a molten material upon a primary rotating magnetron sputtering cathode surface of such thickness as to provide sufficient material for at least one rotation of said cathode while being thin enough so as not to drip when molten, thus allowing substantially higher sputtering power to be applied to said primary cathode.

9. The apparatus of claim 1, wherein said means for coating the surface of said rotating primary surrogate cathode, while in said evacuable coating chamber, includes a selected combination of rotating auxiliary cathode surfaces pre-coated prior to insertion into said evacuable chamber with material which, when sputtered in a controlled manner onto said primary rotating cathode, cooperates with other materials deposited onto said primary rotating surrogate cathode to deposit a thin film having a desired amount of said precoated material in said thin film.

10. The apparatus of claim 1, wherein said means for coating the surface of said rotating primary surrogate cathode includes a selected combination of rotating auxiliary cathode surfaces coated by means of molten material crucibles and vapor sources with materials which decompose into a solid and a gas during vaporization or when sputtered.

11. The apparatus of claim 1, including gas baffles which control gases emitted by said auxiliary coating means, said baffles optionally also serving to isolate the primary sputter zone from auxiliary sputter zones.

12. The apparatus of claim 1, including the separate thermal control of vapor sources and separate sputter power control of auxiliary magnetrons comprising said auxiliary coating means to accurately control elemental ratios in the final sputter deposited compound thin film.

13. The apparatus of claim 1, wherein the primary cathode is precoated with material which will cooperate with other surrogate cathodes comprising said auxiliary coating means to deposit a desired compound thin film.

14. A sputtering apparatus comprising a vapor source including a material container with lid and controlled heating means, a vapor duct connected to said material container by means of a pattern of selected apertures, said vapor ducts being terminated in a plenum region, said plenum region placed adjacent to a rotating magnetron sputtering cathode surface with a minimum gap consistent with rotation accuracy of said rotating magnetron cathode surface.

15. A sputtering apparatus comprising a molten material crucible including a molten material container with controlled heating means, with at least one roller to transfer molten material from said crucible to a rotating magnetron sputtering cathode surface in contact with said roller, with rotary means to synchronize rotation of said roller and said rotating cathode surface.

16. In apparatus for synthesizing chemical compounds in an evacuable coating chamber, a rotating primary surrogate magnetron cathode surface coated with precursor material by a selected combination of thermal vapor sources and by material sputtered from an auxiliary rotating surrogate magnetron, the surface of said auxiliary cathode having been coated by molten material roller coaters, wherein said rotating primary surrogate cathode carries said precursor material into an associated plasma sputtering zone wherein said precursor material is converted into said chemical compound.

17. In apparatus for synthesizing chemical compounds in an evacuable coating chamber, a rotating primary surrogate magnetron cathode surface coated with precursor material by a selected combination of thermal vapor sources and by material sputtered from an auxiliary rotating surrogate magnetron, the surface of said auxiliary cathode having been pre-coated with a selected material prior to insertion into said evacuable coating chamber, wherein said rotating primary surrogate cathode carries said precursor material into an associated plasma sputtering zone wherein said precursor material is converted into said chemical compound.

18. A method for sputtering a compound thin film of selected coating materials onto selected substrates, comprising providing an evacuable coating chamber containing a thermally cooled rotating primary magnetron surrogate cathode, a plurality of controllable auxiliary coating means for coating the surface of said primary cathode with a plurality of selected materials, and causing said controllable auxiliary coating means to cooperate to deposit upon the surface of said primary surrogate cathode a multi-material coating containing all the necessary materials in controlled amounts, wherein said multi-material coating on the surface of said primary surrogate cathode is rotated into a sputter plasma zone of said primary cathode, causing the selected compound thin film to be deposited on at least one substrate.

19. The method of claim 18, including cyclically varying the sputter power to said primary surrogate cathode in a manner so as to improve the uniformity of the chemical composition of the deposited compound thin film.