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Method of forming a SOI transistor having a self-aligned body contact

  • US 5,405,795 A
  • Filed: 06/29/1994
  • Issued: 04/11/1995
  • Est. Priority Date: 06/29/1994
  • Status: Expired due to Fees
First Claim
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1. A method of forming a SOI field effect transistor comprising a source and drain doped with a first polarity and formed in a silicon layer doped with a second polarity and disposed above an insulating substrate and a gate insulator and gate disposed above a body portion of said silicon layer between said source and drain, and having a gate extension connected to said gate and also disposed above said gate insulator and above a collection portion of said silicon layer, said body portion and said collection portion being in proximity;

  • anda collection electrode doped with said second polarity and disposed in said silicon layer on a collection side of said gate extension, whereby minority carriers may flow from said body through said collection portion of said silicon layer to said collection electrode, comprising the steps of;

    defining an active transistor area in said silicon layer;

    forming a gate stack comprising a gate oxide, gate and gate dielectric having a gate dielectric top surface;

    patterning said gate stack to define said gate and said gate extension and further defining source and drain areas adjacent said gate in said active area, whereby said gate has a gate length between said source and drain;

    forming insulating gate sidewalls on edges of said gate adjacent said source and drain;

    forming raised conductive source and drain members above said source and drain and isolated from said gate by said insulating gate sidewalls;

    forming cap dielectric members above said raised source and drain members, said cap dielectric having a cap top surface higher than said gate dielectric top surface and having sidewall-defining edges adjacent said gate extension;

    depositing a first conformal layer of an aperture-defining dielectric above said gate dielectric and cap dielectric, thereby defining an aperture location above said gate dielectric having a bottom covered with said first conformal dielectric and interior aperture sidewalls above said sidewall-defining edges of said cap dielectric;

    etching directionally through said aperture-defining dielectric and said gate extension to form a collection electrode aperture, thereby forming a sidewall support member from that portion of said gate extension below said interior aperture sidewalls;

    depositing a conformal sidewall layer of dielectric extending into said collection electrode aperture; and

    directionally etching said conformal sidewall layer of dielectric, thereby forming insulating interior sidewalls on interior walls of said collection aperture, said interior walls including a portion of said gate extension disposed between said collection aperture and said source and drain.

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