Method of producing a monolithically integrated millimeter wave circuit

• US 5,405,797 A
• Filed: 03/30/1994
• Issued: 04/11/1995
• Est. Priority Date: 06/15/1992
• Status: Expired due to Term

• Current Assignee: Daimler-Benz AG (Mercedes-Benz Group AG)
• Original Assignee: Daimler-Benz AG (Mercedes-Benz Group AG)
• Inventors: Brugger, Hans
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): NGUYEN, TUAN H
• Application Number:
  US08/219,856
• Time in Patent Office: 377 Days
• Field of Search: 257/195, 257/192, 257/194, 257/193, 257/476, 437/31, 437/126, 437/133, 437/59, 437/60, 437/175, 437/176, 437/51, 148/DIG. 72
• US Class Current: 438/172
• CPC Class Codes: H01L 21/8252 the substrate being a semiconductor, using III-V technology H01L21/8258 takes precedence
• CPC Class Codes: H01L 27/0605 integrated circuits made of compound material, e.g. AIIIBV

Abstract

A method and an arrangement for an integrated millimeter wave circuit wherein a Schottky diode and an HFET are produced in a quasi-planar arrangement from a semiconductor layer sequence. Due to the quasi-planar arrangement, the manufacturing process is simplified since particularly the contact regions of the Schottky diode and the HFET are produced simultaneously.

Claims

1. A method of producing an integrated circuit including at least one HFET and at least one Schottky diode, comprising the following steps:

epitaxially growing a first semiconductor layer sequence for a Schottky diode on a semi-insulating substrate;

subsequently precipitating an undoped further semiconductor layer, which is configured as an etch-stop layer, a desorption stop layer and a charge carrier barrier for the HFET, on Said first semiconductor layer sequence.

covering the undoped further semiconductor layer with a thin undoped passivation layer;

subsequently producing, in a photolithographic process, a mask on the surface of the passivation layer for the first semiconductor layer sequence, which mask covers that part of said first semiconductor layer sequence from which the Schottky diode is to be produced;

converting the semiconductor material of the electrically conductive Schottky diode layers in the window regions of the mask into semi-insulating material by selective insulation implantation via the window regions of the mask;

thereafter removing the mask and the passivation layer;

growing a pseudomorphic second semiconductor layer sequence for the HFET on the undoped further semiconductor layer in a second epitaxy process;

selectively etching away the second semiconductor layer sequence of the HFET in the region of the first semiconductor layer sequence from which the Schottky diode is to be produced;

selectively removing the undoped further semiconductor layer in the region of the Schottky diode; and

producing the contact regions for the Schottky diode and for the HFET simultaneously.

2. A method as defined in claim 1, further comprising epitaxially growing a buffer layer of an undoped GaAs layer, an AlGaAs/GaAs superlattice and an undoped GaAs layer on the semi-insulating substrate, which is formed of GaAs, to a total thickness in a range from 0.5 μ

m to 1 μ

m; and

wherein said first semiconductor layer sequences is grown on said buffer layer and is composed of;

an n⁺ -doped GaAs layer having a dopant concentration in a range from 5×

10¹⁸ to 1×

10¹⁹ cm^-3 and a layer thickness in a range from 0.4 μ

m to 0.6 μ

m;

an n-doped GaAs layer of a thickness in a range from 0.2 μ

m to 1 μ

m and a dopant concentration in a range from 1 to 5×

10¹⁷ cm^-3 ; and

an n⁺ -doped GaAs layer having a dopant concentration of at least 5×

10¹⁸ cm^-3 and a thickness of about 30 nm.

3. A method as defined in claim 1, wherein said undoped further layer is formed of undoped AlAs or AlGaAs to a thickness of about 10 nm.

4. A method as defined in claim 1, wherein the second semiconductor layer sequence for the HFET is epitaxially produced from:

an undoped buffer layer of GaAs having a thickness of about 40 nm;

an undoped InGaAs layer having a thickness of about 10 nm and an In content of about 20%;

an undoped spacer layer composed of a GaAs/AlGaAs heterostructure and having an Al content of about 25% and a thickness of about 3 nm;

a modulation doped AlGaAs layer having a homogeneous or pulse-shaped dopant concentration of about 3×

10¹⁸ cm^-3 and a layer thickness of about 30 nm; and

an n⁺ -doped GaAs cover layer having a dopant concentration of at least 5×

10¹⁸ cm^-3 and a layer thickness of about 30 nm.

6. A method as defined in claim 1, wherein the passivation layer applied to the undoped further semiconductor layer is thermally removed under arsenic pressure.

7. A method as defined in claim 1, wherein the thin passivation layer applied to the undoped further semiconductor layer is not removed and the epitaxial wafer including the first semiconductor layer sequence is held at a temperature below 600°

C. during subsequent processing.

8. A method of producing an integrated circuit as defined in claim 1, comprising:

producing a buried n⁺ -conductor path in a semi-insulating substrate by selective Si implantation and a subsequent healing process; and

thereafter, in at least one epitaxy process, precipitating an active n-semiconductor layer and an n⁺ -contact layer of the Schottky diode on the substrate, said further semiconductor layer on said n⁺ -contact layer, and said second layer sequence for the HFET on said further semiconductor layer.

5. A method as defined in claim 12, wherein the selective insulation implantation is effected with oxygen.