Method of manufacturing a semiconductor device

• US 5,405,803 A
• Filed: 09/21/1993
• Issued: 04/11/1995
• Est. Priority Date: 09/25/1992
• Status: Expired due to Term

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Kusaka, Takahisa
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): Fleck, Linda J.
• Application Number:
  US08/124,212
• Time in Patent Office: 567 Days
• Field of Search: 437/95, 437/96, 437/97, 437/98, 156/612, 148/DIG. 60, 117/935
• US Class Current: 117/89
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/3221 of silicon bodies, e.g. for gettering
• CPC Class Codes: H01L 29/36 characterised by the concentration or distribution of impurities in the bulk material within semiconductor regions H01L29/06
• CPC Class Codes: Y10S 148/06 Gettering

Abstract

In a semiconductor device and a method of manufacturing the same according to the present invention, after As and C are introduced to a semiconductor substrate, a semiconductor layer is formed on the semiconductor substrate. When first and second semiconductor layers are to be sequentially formed on a semiconductor substrate, an impurity concentration of As or Sb serving as an impurity of the first semiconductor layer is 10 times or more an impurity concentration of the second semiconductor layer, and the second semiconductor layer has a thickness of 4 to 10 μm.

Claims

1. A method of manufacturing an n-type semiconductor device, comprising the steps of:

forming a first n-type semiconductor layer on an n-type semiconductor substrate, forming a second n-type semiconductor layer on said first n-type semiconductor layer, said second semiconductor layer having a thickness of about 4 to 10 micrometers, and

said first semiconductor layer having an n-type impurity concentration of As or Sb of 10 times or more an n-type impurity concentration of said second semiconductor layer.

2. A method according claim 1, wherein said first and second semiconductor layers are epitaxial layers.