Mechanism for preventing radiation induced latch-up in CMOS integrated circuits

• US 5,406,513 A
• Filed: 02/05/1993
• Issued: 04/11/1995
• Est. Priority Date: 02/05/1993
• Status: Expired due to Term

• Current Assignee: Science & Technology Corporation
• Original Assignee: The University of New Mexico
• Inventors: Canaris, John, Cameron, Kelly, Whitaker, Sterling
• Primary Examiner(s): LaRoche, Eugene R.
• Assistant Examiner(s): Hoang, Huan
• Application Number:
  US08/014,319
• Time in Patent Office: 795 Days
• Field of Search: 365/53, 365/190, 365/156, 365/181, 365/154, 257/373, 257/376, 257/372, 257/369, 257/370
• US Class Current: 365/181
• CPC Class Codes: G11C 11/4125 Cells incorporating circuit means for protecting against loss of information
• CPC Class Codes: G11C 5/005 Circuit means for protection against loss of information of semiconductor storage devices
• CPC Class Codes: H01L 27/0921 Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Abstract

A CMOS circuit formed in a semiconductor substrate having improved immunity to radiation induced latch-up and improved immunity to a single event upset. The circuit architecture of the present invention can be utilized with N-Well, P-Well and dual Well processes. For example, the circuit is described relative to an N-Well process. An N-Well is formed in a p-type substrate. A network of p-channel transistors are formed in the N-Well and a network of n-channel transistors are formed in the p-type substrate. A continuous P+guard ring is formed surrounding the n-channel transistors and between the n-channel transistors and the N-Well. Similarly, a continuous N+guard ring is formed surrounding the p-channel transistors and between the p-channel transistors and the p-type substrate. In the event of a radiation hit, the guard rings operate to reduce the parasitic impedance in the collector circuits of the parasitic bipolars forming a parasitic SCR and also act as additional collectors of radiation induced current. Single event upset immunity is improved by forming duplicate functions in an n-channel network and a p-channel network. N-channel control transistors are coupled to control p-channel load transistors and p-channel control transistors are coupled to control n-channel load transistors.

Claims

1. A CMOS circuit formed in a semiconductor substrate having a circuit-bearing-surface with a p-type region and an n-type region, the circuit includes a Vdd power supply and a Vss power supply, the circuit having improved immunity to radiation induced latch-up and comprising:

a. an n-channel transistor formed in the p-type region of the substrate having a source coupled to Vss;

b. a p-channel transistor formed in the n-type region of the substrate having a drain coupled to the n-channel transistor and a source coupled to Vdd;

c. a single p+guard formed between the n-channel transistor and the n-type region wherein the p+guard is electrically coupled to Vss; and

d. a single n+guard formed between the p-channel transistor and the p-type region wherein the n+guard is electrically coupled to Vdd,

the circuit further comprising means for improving immunity to a single event upset comprising;

e. an n-channel network of devices for performing a function, the n-channel network having a plurality of n-channel control devices and a plurality of n-channel load devices;

f. a p-channel network of devices for performing the function, the p-channel network having a plurality of p-channel control devices and a plurality of p-channel load devices; and

g. means for cross coupling the n-channel network and the p-channel network such that an n-channel control device controls a p-channel load device and a p-channel control device controls an n-channel load device.

2. The circuit according to claim 1 wherein the p+guard comprises a continuous region surrounding the p-type region and the n+guard comprises a continuous region surrounding the n-type region.

3. The circuit according to claim 1 wherein the p-type region is a well formed in an n-type substrate.

4. The circuit according to claim 1 wherein the n-type region is a well formed in an p-type substrate.

5. The circuit according to claim 1 wherein the p-type region and the n-type region are wells formed in the substrate.

6. The circuit according to claim 1 wherein the p-channel load transistors are designed to carry less current than the p-channel control transistors and wherein the n-channel load transistors are designed to carry less current than the n-channel control transistors.

7. The circuit according to claim 1 wherein the means for improving immunity to a single event upset further comprises:

a. a first network of devices for performing a function, the first network having a plurality of p-channel control devices and plurality of first loads, each first load having a serially connected n-channel load device and a p-channel load device such that the p-channel load device is coupled between the n-channel load device and one of the p-channel control devices and wherein the p-channel control devices and the first loads are appropriately interconnected for performing a predetermined logic function;

b. a second network of devices for performing a function, the first network having a plurality of n-channel control devices and plurality of second loads, each second load having a serially connected n-channel load device and a p-channel load device such that the n-channel load device is coupled between the p-channel load device and one of the n-channel control devices and wherein the n-channel control devices and the second loads are appropriately interconnected for performing the logic function; and

c. means for cross coupling the first network and the second network such that an n-channel control device controls a p-channel load device in one of the first loads and an n-channel device in another of the first loads and a p-channel control device controls a p-channel load device in one of the second loads and an n-channel device in another of the second loads.

8. The circuit according to claim 7 wherein the n-channel load device and the p-channel load device in a load are either both conductive or both off.

9. A CMOS circuit formed in a semiconductor substrate having a first-doping-type, the circuit including a first and a second power supply, the circuit having improved immunity to radiation induced latch-up and comprising:

a. a well formed in the substrate of a second-doping-type, wherein the second-doping-type is opposite polarity of the first-doping-type;

b. a plurality of first-doping-type-channel transistors formed in the second-doping-type well each having an electrode electrically coupled to the first power supply;

c. a plurality of second-doping-type-channel transistors formed in the substrate outside of the well each having an electrode electrically coupled to the second power supply;

d. a single second-doping-type guard formed between the first-doping-type-channel transistors and the substrate, wherein the second-doping-type guard is electrically coupled to the first power supply; and

e. a single first-doping-type guard formed between the second-doping-type-channel transistor and the well, wherein the first-doping type guard is electrically coupled to the second power supply,

the circuit further comprising means for improving immunity to a single event upset comprising;

f. a first-doping-type-channel network of devices for performing a function, the first-doping-type-channel network having a plurality of first-doping-type-channel control devices and a plurality of first-doping-type-channel load devices;

g. a second-doping-type-channel network of devices for performing the function, the second-doping-type-channel network having a plurality of second-doping-type-channel control devices and a plurality of second-doping-type-channel load devices; and

h. means for cross coupling the first-doping-type-channel network and the second-doping-type-channel network such that an first-doping-type-channel control device controls a second-doping-type-channel load device and a second-doping-type-channel control device controls and first-doping-type-channel load device.

10. The circuit according to claim 9 wherein the second-doping-type guard comprises a continuous region surrounding the well and the first-doping-type guard comprises a continuous region surrounding a portion of the substrate outside the well.

11. The circuit according to claim 9 wherein the second-doping-type-channel load transistors are designed to carry less current than the second-doping-type-channel control transistors and wherein the first-doping-type-channel load transistors are designed to carry less current than the first-doping-type-channel control transistors.

12. The circuit according to claim 11 wherein the means for improving immunity to a single event upset further comprises:

a. a first network of devices for performing a function, the first network having a plurality of second-doping-type-channel control devices and plurality of first loads, each first load having a serially connected first-doping-type-channel load device and a second-doping-type-channel load device such that the second-doping-type-channel load device is coupled between the first-doping-type-channel load device and one of the second-doping-type-channel control devices and wherein the second-doping-type-channel control devices and the first loads are appropriately interconnected for performing a predetermined logic function;

b. a second network of devices for performing a function, the second network having a plurality of first-doping-type-channel control devices and plurality of second loads, each second load having a serially connected first-doping-type-channel load device and a second-doping-type-channel load device such that the first-doping-type-channel load device is coupled between the second-doping-type-channel load device and one of the first-doping-type-channel control devices and wherein the first-doping-type-channel control devices and the second loads are appropriately interconnected for performing the logic function; and

c. means for cross coupling the first network and the second network such that a first-doping-type-channel control device controls a first-doping-type-channel load device in one of the first loads and a second-doping-type-channel load device in another of the first loads and a second-doping-type-channel control device controls a first-doping-type-channel load device in one of the second loads and a second-doping-type-channel load device in another of the second loads.

13. The circuit according to claim 12 wherein the first-doping-type-channel load device and the second-doping-type-channel load device in a load are either both conductive or both off.