×

Light-emitting device of gallium nitride compound semiconductor

  • US 5,408,120 A
  • Filed: 01/22/1993
  • Issued: 04/18/1995
  • Est. Priority Date: 07/23/1992
  • Status: Expired
First Claim
Patent Images

1. A light-emitting device of gallium nitride compound semiconductor material comprising:

  • an n-layer of n-type gallium nitride compound semiconductor material (Alx Ga1-x N, x≧

    0); and

    an i-layer of i-type gallium nitride compound semiconductor material (Alx Ga1-x N, x≧

    0) doped with a p-type impurity;

    wherein a first electrode layer including Ni is formed in contact with said i-layer and functions as an electrode therefore; and

    wherein said first electrode layer is a multi-layer structure having a first Ni layer of predetermined thickness formed over said i-layer, a second Ni layer which is thicker than said first Ni layer and formed thereon, an Al layer formed over said second Ni layer, a Ti layer formed over said Al layer, and a third Ni layer which is thicker than said first Ni layer formed over said Ti layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×