High power semiconductor device module with low thermal resistance and simplified manufacturing

• US 5,408,128 A
• Filed: 09/15/1993
• Issued: 04/18/1995
• Est. Priority Date: 09/15/1993
• Status: Expired due to Fees

• Current Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Furnival, Courtney
• Primary Examiner(s): Limanek, Robert P.
• Assistant Examiner(s): BROWN, PETER T
• Application Number:
  US08/122,052
• Time in Patent Office: 580 Days
• Field of Search: 257/690, 257/692-694, 257/712, 257/713, 257/717, 257/723, 257/724, 257/698
• US Class Current: 257/690
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 23/49811 Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/49861 Lead-frames fixed on or encapsulated in insulating substrates H01L23/4985, H01L23/49805 take precedence
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1301 Thyristor
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

A high power semiconductor module has an IMS substrate which carries the semiconductor die to be interconnected within the housing. A terminal board carries the terminals for connection to the substrate with a snap connection, with the terminals positioned above respective solder pads on the IMS board. Integral breakaway pins on the terminal board position the board relative to the IMS during soldering. A central opening in the terminal board allows the loading of a soft silicone into the space between the IMS substrate and bottom of the terminal board. The terminal board has bosses extending upwardly over its top surface adjacent each power terminal, and the bottom of a top housing assembly has ribs which enclose the bosses on the top of the terminal board. A silicone glue is poured onto the top of the terminal board and into the spaces between and around the bosses. The ribs project into this glue to provide a good insulation seal around the power terminals projecting through the terminal board.

Claims

1. A power semiconductor module comprising:

an insulation housing cap having an open bottom, a plurality of semiconductor die interconnected within said housing cap to form a predetermined electrical circuit, a planar thermally conductive substrate extending across and fixed across said open bottom of said housing cap and supporting said plurality of semiconductor die, a plurality of rigid terminals insulated from one another and extending generally perpendicularly from the plane of said thermally conductive substrate, a terminal carrier board having spaced openings therethrough which receive and are fastened to intermediate points along the lengths of said plurality of terminals for supporting said terminals in parallel spaced and insulated relationship to one another;

each of said terminals having first and second end regions;

said first end regions of said terminals disposed in a common plane which is generally coplanar with the top surface of said thermally conductive substrate;

the top surface of said thermally conductive substrate having spaced conductive bonding areas in alignment with respective first end regions of said plurality of terminals and at which said first end regions of said terminals are mechanically fixed to selected ones of said conductive bonding areas on said thermally conductive substrate;

the bottom of said terminal board being spaced above the top of said thermally conductive substrate to define a first expansion volume above said substrate;

said housing cap having spaced openings therethrough at locations corresponding to the location of said plurality of terminals;

said plurality of terminals extending through said openings in said housing cap to be accessible for external connection;

said terminal board being nested within the interior of said housing cap.

2. The device of claim 1 wherein said plurality of terminals are snap-connected within said terminal board.

3. The device of claim 1 wherein said first volume is at least partly filled with a soft silicone filler.

4. The device of claim 3 wherein said terminal board has a sealable opening therethrough for injecting said soft silicone filler into said first volume.

5. The device of claim 1 wherein said substrate has mounting openings therethrough in areas external to said cap;

said terminal board having removable projections which nest into said mounting openings to position said terminal board and the said first ends of said plurality of terminals in alignment with their said respective bonding areas on said substrate during assembly.

6. The device of claim 1 wherein said first end regions of said terminals are bent to define flat end areas which are parallel to the plane of said substrate.

7. The device of claim 1 wherein said substrate is an IMS substrate.

8. The device of claim 1 wherein the interior of said housing cap is glued to the top of said terminal board, with said glue enclosing and sealing the periphery of each of said terminals where they extend through said terminal board and said housing cap.

9. The device of claim 8 wherein said glue is a silicone glue.

10. The device of claim 8 wherein the top of said terminal board has a shallow glue-receiving moat through which said plurality of terminals extend, and wherein the interior of said housing cap has a plurality of integral projections which project into said moat and surround said terminals.

11. The device of claim 4 wherein said plurality of terminals are snap-connected within said terminal board.

12. The device of claim 4 wherein said first end regions of said terminals are bent to define flat end areas which are parallel to the plane of said substrate.

13. The device of claim 11 wherein said substrate is an IMS substrate.

14. The device of claim 12 wherein said substrate is an IMS substrate.

15. The device of claim 4 wherein the interior of said housing cap is glued to the top of said terminal board, with said glue enclosing and sealing the periphery of each of said terminals where they extend through said terminal board and said housing cap.

16. The device of claim 15 wherein the top of said terminal board has a shallow glue-receiving moat through which said plurality of terminals extend;

and wherein the interior of said housing cap has a plurality of integral projections which project into said moat and surround said terminals.

17. The device of claim 1 wherein said plurality of semiconductor die include IGBT die.

18. The device of claim 1 wherein said thermally conductive substrate comprises a flat, relatively thick bottom plate of conductive material, a relatively thin layer of insulation material on the top of said bottom plate, and a relatively thin layer of conductive material disposed atop said layer of insulation material and having a given topological pattern over said layer of insulation material;

and at least one flat conductive heat spreader plate connected over substantially its full bottom surface to an area of said relatively thin layer of conductive material and comprising a heat spreader plate;

at least selected ones of said plurality of semiconductor die being soldered to the top surface of said heat spreader plate in closely spaced relation to one another and extending along a line which is generally along and through the center of said heat spreader, whereby heat can be efficiently conducted from said die to the full volume of said heat spreader plate.

19. The device of claim 18 wherein said relatively thick bottom plate and said heat spreader plate are aluminum.

20. The device of claim 19 wherein said heat spreader plate is a rectangular plate having a width which is close to the full width of said relatively thick bottom plate.

21. The device of claim 18 wherein said plurality of semiconductor die include IGBT die.

22. The device of claim 21 wherein said plurality of semiconductor die further include fast recovery diode die which are connected in parallel with respective ones of said IGBT die.

23. The device of claim 22 wherein said fast recovery diode die are spaced from one another and extend along a second line which is parallel to the line of said IGBT die.

24. The device of claim 23 wherein each of said IGBT die contains a gate resistor in series with its gate electrode;

said gate resistors being integrated into each die respectively.