Light-emitting diode

• US 5,410,159 A
• Filed: 09/30/1993
• Issued: 04/25/1995
• Est. Priority Date: 09/30/1992
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Itaya, Kazuhiko, Sugawara, Hideto
• Primary Examiner(s): JACKSON JR, JEROME
• Application Number:
  US08/128,643
• Time in Patent Office: 572 Days
• Field of Search: 257/96, 257/97, 257/85, 257/13, 372/45, 372/50
• US Class Current: 257/13
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01S 5/18 Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
• CPC Class Codes: H01S 5/34326 with a well layer based on InGa(Al)P, e.g. red laser

Abstract

A light-emitting diode, in which light is emitted from a side opposite to a substrate, includes a compound semiconductor substrate of a first conductivity type, a lower cladding layer formed on the substrate end consisting of InGaAlP of the first conductivity type, a light-emitting layer formed on the lower cladding layer and having a quantum well structure constituted by alternately stacking barrier layers and eight or more quantum well layers, and an upper cladding layer formed on the light-emitting layer and consisting of InGaAlP of a second conductivity type.

Claims

1. A light-emitting diode comprising:

a compound semiconductor substrate of a first conductivity type;

a lower cladding layer formed on said compound semiconductor substrate and essentially consisting of InGaAlP of said first conductivity type;

a light-emitting layer formed on said lower cladding layer and having a quantum well structure constituted by alternately stacking barrier layers and 10 to 19 quantum well layers; and

and upper cladding layer formed on said light-emitting layer and essentially consisting of InGaAlP of a second conductivity type,

wherein light having emission wavelengths in the range of 590 to 620 nm is emitted from said light-emitting diode.

2. A light-emitting diode according to claim 1, wherein said barrier layers essentially consist of InGaAlP, and an Al content of said barrier layers is lower than that of said upper and lower cladding layers which essentially consist of InGaAlP of said first and second conductivity types.

3. A light-emitting diode according to claim 1, wherein said quantum well layers essentially consist of IN_1-y (Ga_1-x Al_x)_y (P 0≦

x≦

1 and 0≦

y≦

1), and said barrier layers essentially consist of IN_1-t (Ga_1-s Al_s)_t P (x<

s≦

1 and 0<

t≦

1).

4. A light-emitting diode according to claim 1, wherein said compound semiconductor substrate essentially consists of GaAs, and said upper and lower cladding layers essentially consist of In₀.5 (Ga_1-u Al_u)₀.5 P, lattice-matched with GaAs.

5. A light-emitting diode according to claim 1, wherein a thickness of each of said quantum well layers is 0 to -3% smaller than that of said compound semiconductor substrate.

6. A light-emitting diode comprising:

a compound semiconductor substrate of a first conductivity type;

a lower cladding layer formed on said compound semiconductor substrate and essentially consisting of InGaAlP of said first conductivity type;

a light-emitting layer formed on said lower cladding layer and having a quantum well structure constituted by alternately stacking barrier layers and 20 to 80 quantum well layers; and

and upper cladding layer formed on said light-emitting layer and essentially consisting of InGaAlP of a second conductivity type,

wherein light having emission wavelengths in the range of 590 to 620 nm is emitted from said light-emitting diode.

7. A light-emitting diode according to claim 6, wherein said barrier layers essentially consist of InGaAlP, and an Al content of said barrier layers is lower than that of said upper and lower cladding layers which essentially consist of InGaAlP of said first and second conductivity types.

8. A light-emitting diode according to claim 6, wherein said quantum well layers essentially consist of IN_1-y (Ga_1-x Al_x)_y P (0≦

x≦

1 and 0≦

y≦

1), and said barrier layers essentially consist of IN_1-t (Ga_1-s Al_s)_t P (x<

s≦

1 and 0<

t≦

1).

9. A light-emitting diode according to claim 6, wherein said compound semiconductor substrate essentially consists of GaAs, and said upper and lower cladding layers essentially consist of In₀.5 (Ga_1-u Al_u)₀.5 P, lattice-matched with GaAs.

10. A light-emitting diode according to claim 6, wherein a thickness of each of said quantum well layers is 0 to -3% smaller than that of said compound semiconductor substrate.