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Light-emitting diode

  • US 5,410,159 A
  • Filed: 09/30/1993
  • Issued: 04/25/1995
  • Est. Priority Date: 09/30/1992
  • Status: Expired due to Term
First Claim
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1. A light-emitting diode comprising:

  • a compound semiconductor substrate of a first conductivity type;

    a lower cladding layer formed on said compound semiconductor substrate and essentially consisting of InGaAlP of said first conductivity type;

    a light-emitting layer formed on said lower cladding layer and having a quantum well structure constituted by alternately stacking barrier layers and 10 to 19 quantum well layers; and

    and upper cladding layer formed on said light-emitting layer and essentially consisting of InGaAlP of a second conductivity type,wherein light having emission wavelengths in the range of 590 to 620 nm is emitted from said light-emitting diode.

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