Thermoelectric device utilizing nanoporous material

• US 5,411,599 A
• Filed: 04/12/1994
• Issued: 05/02/1995
• Est. Priority Date: 09/20/1993
• Status: Expired due to Fees

• Current Assignee: The United States of America As Represented By The Secretary of Agriculture
• Original Assignee: The United States of America As Represented By The Secretary of Agriculture
• Inventors: Horn, Stuart B., Nelson, Elizabeth H.
• Primary Examiner(s): Larkins, William D.
• Assistant Examiner(s): CLARK, SHEILA V
• Application Number:
  US08/227,741
• Time in Patent Office: 385 Days
• Field of Search: 257/930, 136/203, 136/236.1, 136/238, 136/239, 136/240, 136/241
• US Class Current: 136/203
• CPC Class Codes: H10N 10/01 Manufacture or treatment
• CPC Class Codes: H10N 10/852 comprising tellurium, selenium or sulfur
• CPC Class Codes: Y10S 257/93 Thermoelectric, e.g. peltier effect cooling

Abstract

A nanoporous semiconductor material and fabrication technique for use as thermoelectric elements. Starting precursors are mixed in solution so as to thoroughly dissolve in solution which is then reduced. A second phase may be added in solution to provide nanoinclusions which may be subsequently removed. A nanoporous semiconductor is formed whereby lattice thermal conductivity is greatly reduced, due to enhanced phonon scattering on the order of 10 W/cm·°K. The nanoporous semiconductor material may be used as the n- and p- legs in a Peltier couple utilized for a thermoelectric cooler, a cryogenic cooler, thermoelectric power generator, or a thermoelectric heat pump.

Claims

1. In a thermoelectric device, a semiconductor utilized as the n- and p- legs of a peltier couple, comprising:

a nanoporous structure whereby lattice thermal conductivity is greatly reduced, due to enhanced phonon scattering on the order of 10 W/cm·

°

K.

2. The semiconductor of claim 1 wherein contact ends of said structure is fabricated as a solid.