Semiconductor light detecting device making use of a photodiode chip
First Claim
1. A semiconductor light detecting device comprising:
- a housing having an optical fiber as an optical transmission path inserted therein;
a header secured to said housing and integral therewith; and
a photodiode chip mounted on said header, said photodiode chip includinga compound semiconductor substrate,a cathode electrode provided on a first surface of said compound semiconductor substrate,a compound semiconductor layer of a first conductivity type provided on a second surface of said compound semiconductor substrate, said second surface being opposite to said first surface,a first region of a second conductivity type provided in said compound semiconductor layer, a pn junction area being formed at an interface of said compound semiconductor layer and said first region, said pn junction functioning as a photosensing region,a second region of said second conductivity type surrounding said first region and being spaced from said first region, said second region absorbing carriers generated near said second region in response to incident light, andan anode electrode provided on said first region and electrically connected thereto.
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Accused Products
Abstract
A semiconductor light detecting device in which a housing with an optical fiber is inserted in is secured to a header with a photodiode chip mounted on integral therewith, and a light detecting surface of the photodiode chip is opposed to a light emitting surface of the optical fiber, the photodiode chip having a pn junction, the first region is surrounded by a second region of the second conductivity type formed at a portion of the semiconductor layer. The second region has the same or larger depth as or than that of the first region. Thus, even if a light is directed to the outside of the photo-sensing region, extra charges into the photo-sensing region is prevented. As a result, no optical lens system is necessary, and if an optical lens system is used, an inexpensive optical system may be used. Further, the device itself can be fabricated at low costs and easily.
58 Citations
26 Claims
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1. A semiconductor light detecting device comprising:
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a housing having an optical fiber as an optical transmission path inserted therein; a header secured to said housing and integral therewith; and a photodiode chip mounted on said header, said photodiode chip including a compound semiconductor substrate, a cathode electrode provided on a first surface of said compound semiconductor substrate, a compound semiconductor layer of a first conductivity type provided on a second surface of said compound semiconductor substrate, said second surface being opposite to said first surface, a first region of a second conductivity type provided in said compound semiconductor layer, a pn junction area being formed at an interface of said compound semiconductor layer and said first region, said pn junction functioning as a photosensing region, a second region of said second conductivity type surrounding said first region and being spaced from said first region, said second region absorbing carriers generated near said second region in response to incident light, and an anode electrode provided on said first region and electrically connected thereto. - View Dependent Claims (2, 3, 4, 5, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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6. A semiconductor light detecting device comprising:
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a housing with an optical fiber as an optical transmission path inserted therein; a header secured to said housing and integral therewith; and a photodiode chip mounted on said header, said photodiode chip including a compound semiconductor substrate of a highly doped first conductivity type, a low doped compound semiconductor layer provided on a front surface of said compound semiconductor substrate, a first region of a highly doped second conductivity type provided in said low doped semiconductor layer, a pn junction functioning as a photo-sensing region being formed at an interface of said first region and said low doped semiconductor layer, a second region of said second conductivity type surrounding said first region and being spaced from said first region, and a cathode electrode provided on a back surface of said compound semiconductor substrate. - View Dependent Claims (7, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification