Semiconductor light detecting device making use of a photodiode chip

• US 5,412,229 A
• Filed: 12/01/1993
• Issued: 05/02/1995
• Est. Priority Date: 08/31/1990
• Status: Expired due to Term

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: Tonai, Ichiro, Koseki, Hideaki, Michikoshi, Hisato, Kuhara, Yoshiki
• Primary Examiner(s): Nguyen, Viet Q.
• Application Number:
  US08/159,577
• Time in Patent Office: 517 Days
• Field of Search: 257/182, 257/183, 257/184, 257/200, 257/12, 257/21, 257/431, 257/432, 257/433, 257/436, 372/45
• US Class Current: 257/183
• CPC Class Codes: G02B 6/4202 for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
• CPC Class Codes: G02B 6/4207 with optical elements reducing the sensitivity to optical feedback anti-reflection devices specially adapted for lasers, see H01S3/0064
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 31/02164 for shielding light, e.g. light blocking layers, cold shields for infrared detectors
• CPC Class Codes: H01L 31/03529 Shape of the potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/105 the potential barrier being of the PIN type
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A semiconductor light detecting device in which a housing with an optical fiber is inserted in is secured to a header with a photodiode chip mounted on integral therewith, and a light detecting surface of the photodiode chip is opposed to a light emitting surface of the optical fiber, the photodiode chip having a pn junction, the first region is surrounded by a second region of the second conductivity type formed at a portion of the semiconductor layer. The second region has the same or larger depth as or than that of the first region. Thus, even if a light is directed to the outside of the photo-sensing region, extra charges into the photo-sensing region is prevented. As a result, no optical lens system is necessary, and if an optical lens system is used, an inexpensive optical system may be used. Further, the device itself can be fabricated at low costs and easily.

Claims

1. A semiconductor light detecting device comprising:

a housing having an optical fiber as an optical transmission path inserted therein;

a header secured to said housing and integral therewith; and

a photodiode chip mounted on said header, said photodiode chip including

a compound semiconductor substrate,

a cathode electrode provided on a first surface of said compound semiconductor substrate,

a compound semiconductor layer of a first conductivity type provided on a second surface of said compound semiconductor substrate, said second surface being opposite to said first surface,

a first region of a second conductivity type provided in said compound semiconductor layer, a pn junction area being formed at an interface of said compound semiconductor layer and said first region, said pn junction functioning as a photosensing region,

a second region of said second conductivity type surrounding said first region and being spaced from said first region, said second region absorbing carriers generated near said second region in response to incident light, and

an anode electrode provided on said first region and electrically connected thereto.

2. A semiconductor light detecting device according to claim 1, wherein

said compound semiconductor layer is made by crystal growth of a semiconductor material having a composition which is the same as that of said compound semiconductor substrate.

3. A semiconductor light detecting device according to claim 1, wherein

said compound semiconductor layer is a lamination of a plurality of semiconductor layers having lower impurity concentrations than that of said compound semiconductor substrate, and at least one of said plurality of semiconductor layers, which does not contact said compound semiconductor substrate, has a composition which is different from said compound semiconductor substrate.

4. A semiconductor light detecting device according to claim 3, wherein

said compound semiconductor substrate is an n⁺ -type InP (indium-phosphide) substrate, and said compound semiconductor layer is a lamination of an n-type InP buffer layer, an n-type InGaAs (indium-gallium-arsenide) absorbing layer and an n-type InP window layer, in sequence.

5. A semiconductor light detecting device according to claim 1, wherein said first region of said photodiode chip includes a main surface which is opposite said interface, and wherein

said optical fiber and said photodiode chip are optically coupled without contacting each other;

and a signal light emitting end surface of said optical fiber and said main surface of said photodiode chip are opposed to each other.

8. A semiconductor light detecting device according to claim 1, further comprising:

an optical lens system provided within a housing which transmits signal light emitted from an end surface of said optical fiber to said first region of said photodiode chip.

9. A semiconductor light detecting device according to claim 8, wherein

said compound semiconductor layer is made by crystal growth of a semiconductor material having a composition which is the same as that of said compound semiconductor substrate.

10. A semiconductor light detecting device according to claim 8, wherein

said compound semiconductor layer is a lamination of a plurality of semiconductor layers having lower impurity concentrations than that of said compound semiconductor substrate, and at least one of said plurality of semiconductor layers, which does not contact said compound semiconductor substrate, has a composition which is different from that of said compound semiconductor substrate.

11. A semiconductor light detecting device according to claim 10, wherein

said compound semiconductor substrate is an n⁺ -type InP (indium-phosphide) substrate, and said compound semiconductor layer is a lamination of an n-type InP buffer layer, an n-type InGaAs (indium-gallium-arsenide) absorbing layer and an n-type InP window layer, in sequence.

12. A semiconductor light detecting device according to claim 8, wherein said first region of said photodiode chip includes a main surface which is opposite said interface, and wherein

said optical fiber and said photodiode chip are optically coupled with each other through said optical lens system;

and said signal light emitting end surface of said optical fiber and said main surface of said photodiode chip are opposed to each other.

13. A semiconductor light detecting device according to claim 8, wherein

said photodiode chip mounted on said header is airtightly sealed within a cap, and the interior of said cap is filled with an inert element.

14. A semiconductor light detecting device according to claim 13, wherein

said cap has a light transmitting window for passing signal light emitted from the light emitting end surface of said optical fiber.

15. A semiconductor light detecting device according to claim 12, wherein

said optical lens system uses a spherical lens.

16. A semiconductor light detecting device according to claim 15, wherein

said spherical lens is secured to a lens holder which is integrated with said housing.

17. A semiconductor light detecting device according to claim 15, wherein

said spherical lens is secured to a cap, which cap airtightly seals said photodiode chip mounted on said header.

18. A semiconductor light detecting device according to claim 17, wherein

said spherical lens is secured at a position on said cap so as to act as a light transmitting window.

6. A semiconductor light detecting device comprising:

a housing with an optical fiber as an optical transmission path inserted therein;

a header secured to said housing and integral therewith; and

a photodiode chip mounted on said header, said photodiode chip including

a compound semiconductor substrate of a highly doped first conductivity type,

a low doped compound semiconductor layer provided on a front surface of said compound semiconductor substrate,

a first region of a highly doped second conductivity type provided in said low doped semiconductor layer, a pn junction functioning as a photo-sensing region being formed at an interface of said first region and said low doped semiconductor layer,

a second region of said second conductivity type surrounding said first region and being spaced from said first region, and

a cathode electrode provided on a back surface of said compound semiconductor substrate.

7. A semiconductor light detecting device according to claim 6, wherein said first region of said photodiode chip includes a main surface which is opposite said interface, and wherein

said optical fiber and said photodiode chip are optically coupled with each other;

and a signal light emitting end surface of said optical fiber and said main surface of said photodiode chip are opposed to each other.

19. A semiconductor light detecting device according to claim 6, further comprising:

an optical lens system provided within a housing which transmits signal light emitted from an end surface of said optical fiber to said first region of said photodiode chip.

20. A semiconductor light detecting device according to claim 19, wherein said first region of said photodiode chip includes a main surface which is opposite said interface, and wherein

said optical fiber and said photodiode chip are optically coupled with each other through said optical lens system;

and said signal light emitting end surface of said optical fiber and said main surface of said photodiode chip are opposed to each other.

21. A semiconductor light detecting device according to claim 19, wherein

said photodiode chip mounted on said header is airtightly sealed within a cap, and an interior of said cap is filled with an inert element.

22. A semiconductor light detecting device according to claim 21, wherein

said cap has a light transmitting window for passing signal light emitted from said light emitting end surface of said optical fiber.

23. A semiconductor light detecting device according to claim 20, wherein

said optical lens system uses a spherical lens.

24. A semiconductor light detecting device according to claim 23, wherein

said spherical lens is secured to a lens holder which is integrated with said housing.

25. A semiconductor light detecting device according to claim 23, wherein

said spherical lens is secured to a cap, which cap airtightly seals said photodiode chip mounted on said header.

26. A semiconductor light detecting device according to claim 25, wherein

said spherical lens is secured at a position on said cap so as to act as a light transmitting window.