Method of modifying transparent conductive oxide film including method of manufacturing photovoltaic device

• US 5,413,959 A
• Filed: 09/10/1993
• Issued: 05/09/1995
• Est. Priority Date: 09/14/1992
• Status: Expired due to Term

• Current Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Sayno Electric Company Limited
• Inventors: Hosokawa, Hiroshi, Shinohara, Wataru, Yamamoto, Yasuaki, Kiyama, Seiichi
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): HORTON, KENNETH
• Application Number:
  US08/119,879
• Time in Patent Office: 606 Days
• Field of Search: 437/173, 437/174, 437/181, 136/244, 136/256
• US Class Current: 438/98
• CPC Class Codes: H01L 31/02363 of the semiconductor body itself, e.g. textured active layers
• CPC Class Codes: H01L 31/02366 of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
• CPC Class Codes: H01L 31/0547 comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
• CPC Class Codes: H01L 31/1884 Manufacture of transparent electrodes, e.g. TCO, ITO
• CPC Class Codes: Y02E 10/52 PV systems with concentrators

Abstract

In a method of modifying a transparent conductive oxide film and in a method of manufacturing a photovoltaic device, a transparent conductive oxide film is irradiated with an energy beam for increasing the carrier concentration and thereby reducing the resistance of the transparent conductive oxide film.

Claims

1. A method of modifying a transparent conductive oxide film, comprising the steps of:

emitting an energy beam from an energy beam generating device; and

irradiating said transparent conductive oxide film with said energy beam, thereby increasing the carrier concentration and reducing the resistance in said film.

2. The modifying method in accordance with claim 1, wherein said energy beam has a wavelength not greater than 400 nm.

3. The modifying method in accordance with claim 1, wherein said energy beam has an intensity within the range from 0.1 to 1.0 J/cm².

4. The modifying method in accordance with claim 1, wherein said oxide film has an initial surface texture and wherein said step of irradiating said oxide film achieves a softening of the degree of said texture.

5. The modifying method in accordance with claim 1, wherein said transparent conductive oxide film is made of tin oxide.

6. The modifying method in accordance with claim 1, wherein said transparent conductive oxide film is made of indium tin oxide.

20. The modifying method in accordance with claim 1, wherein said step of irradiating said oxide film is carried out over substantially the entire area of said oxide film, thereby increasing the carrier concentration and reducing the resistance substantially throughout said film.

7. A method of manufacturing a photovoltaic device, comprising the steps of:

forming a transparent conductive oxide film on a substrate;

irradiating said transparent conductive oxide film with an energy beam thereby increasing the carrier concentration and reducing the resistance in said film;

forming a photoelectric conversion layer having at least one p-n junction on said transparent conductive oxide film; and

forming an electrode film on said photoelectric conversion layer.

8. The manufacturing method in accordance with claim 7, wherein said energy beam has a wavelength not greater than 400 nm.

9. The manufacturing method in accordance with claim 7, wherein said energy beam has an intensity within the range from 0.1 to 1.0 J/cm².

10. The manufacturing method in accordance with claim 7, wherein said oxide film has an initial surface texture and wherein said step of irradiating said oxide film achieves a softening of the degree of said texture.

11. The manufacturing method in accordance with claim 7, wherein said transparent conductive oxide film is made of tin oxide.

12. The manufacturing method in accordance with claim 7, wherein said transparent conductive oxide film is made of indium tin oxide.

13. A method of manufacturing a photovoltaic device, comprising the steps of:

forming an electrode film on a substrate;

forming a photoelectric conversion layer having at least one p-n junction on said electrode film;

forming a transparent conductive oxide film on said photoelectric conversion layer; and

irradiating said transparent conductive oxide film with an energy beam thereby increasing the carrier concentration and reducing the resistance in said film.

14. The manufacturing method in accordance with claim 13, wherein said step of irradiating said oxide film effects forming a texture on an irradiated portion of said oxide film.

15. The manufacturing method in accordance with claim 13, wherein said step of irradiating said oxide film comprises irradiating a part of said oxide film with said energy beam for converting said irradiated part to a collector electrode for collecting carriers.

16. The manufacturing method in accordance with claim 13, wherein said energy beam has a wavelength not greater than 400 nm.

17. The manufacturing method in accordance with claim 13, wherein said energy beam has an intensity within the range from 0.1 to 1.0 J/cm².

18. The manufacturing method in accordance with claim 13, wherein said transparent conductive oxide film is made of tin oxide.

19. The manufacturing method in accordance with claim 13, wherein said transparent conductive oxide film is made of indium tin oxide.