Method of manufacturing semiconductor devices

• US 5,413,967 A
• Filed: 05/03/1994
• Issued: 05/09/1995
• Est. Priority Date: 05/16/1991
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Matsuda, Tetsuo, Okano, Haruo
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): DANG, TRUNG Q
• Application Number:
  US08/237,412
• Time in Patent Office: 371 Days
• Field of Search: 437/238, 437/235, 437/249, 148/DIG. 118
• US Class Current: 438/783
• CPC Class Codes: H01L 21/02131 the material being halogen doped silicon oxides, e.g. FSG
• CPC Class Codes: H01L 21/02208 the precursor containing a compound comprising Si
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/31608 Deposition of SiO2 H01L21/31625, H01L21/31629 and H01L21/31633 take precedence
• CPC Class Codes: Y10S 148/118 Oxide films

Abstract

An organic silane compound gas and an oxidizing gas are introduced into a reaction vessel from each gas source. Further a gas containing at least one kind of halogen, for example carbon tetrafluoride, is decomposed into halogen radicals, etc., by microwave discharge, and introduced into the reaction vessel. Reaction occurs between the gases, resulting in silicon oxide films being formed on substrates in the reaction vessel.

Claims

1. A method of manufacturing semiconductor devices, comprising the steps of:

arranging at least one substrate in a reaction vessel;

decomposing a gas including at least one halogen into halogen radicals;

supplying an organic silane compound gas, an ozone gas, and said gas including at least one halogen decomposed into halogen radicals into said reaction vessel; and

forming a silicon oxide film, including said at least one halogen, on said substrate by heating an inner portion of said reaction vessel to a predetermined temperature, while decreasing exhausted products to levels at which reliability of said silicon oxide film is not impaired.

2. A method of manufacturing semiconductor devices according to claim 1, wherein said decomposing step is a step of decomposing said gas including at least one halogen by microwave discharge.

3. A method of manufacturing semiconductor devices according to claim 1, further comprising the step of forming an ozone gas by silent discharge of an oxygen gas.

4. A method of manufacturing semiconductor devices according to claim 3, wherein said decomposing step includes a step of subjecting said gas including at least one kind of halogen to said silent discharge with said oxygen gas.

5. A method of manufacturing semiconductor devices according to claim 1, wherein said decomposing step is a step of decomposing said gas including at least one kind of halogen by heating thereof at a predetermined temperature.

6. A method of manufacturing semiconductor devices according to claim 5, wherein said gas including at least one halogen is a gas including at least one of an inter-halogen compound and a compound comprising a halogen and a noble gas element.

7. A method of manufacturing semiconductor devices according to claim 1, wherein said gas including at least one halogen is a gas including fluorine.

8. A method of manufacturing semiconductor devices according to claim 7, wherein said gas including fluorine is at least one gas selected from the group consisting of carbon tetrafluoride gas, nitrogen trifluoride gas, fluorine gas, sulfer hexafluoride gas, and monohydrocarbon trifluoride.

9. A method of manufacturing semiconductor devices according to claim 1, further comprising a step of supplying to said reaction vessel a gas including at least one element selected from the group consisting of boron, phosphorus, and arsenic, whereby a silicon oxide film including at least one element selected from the group consisting of boron, phosphorus, and arsenic is formed on said substrate.

11. A method of manufacturing semiconductor devices according to claim 1, wherein said gas including at least one halogen is a gas including fluorine, and a content Q (vol %) of fluorine contained in said silicon oxide film is 0.5≦

Q≦

3.0.

10. A method of manufacturing semiconductor devices, comprising the steps of:

arranging at least one substrate in a reaction vessel;

decomposing a gas including at least one halogen into halogen radicals;

supplying an organic silane compound gas, an ozone gas, and said gas including at least one halogen decomposed into halogen radicals to said reaction vessel;

forming a silicon oxide film, including said at least one halogen, on said substrate by heating an inner portion of said reaction vessel to a predetermined temperature, while decreasing exhausted products to levels at which reliability of said silicon oxide film is not impaired; and

forming a conductive layer on said silicon oxide film.