ESD Protection of ISFET sensors

• US 5,414,284 A
• Filed: 01/19/1994
• Issued: 05/09/1995
• Est. Priority Date: 01/19/1994
• Status: Expired due to Term

• Current Assignee: General Signal Corporation (SPX Corporation)
• Original Assignee: General Signal Corporation (SPX Corporation)
• Inventors: Connery, James G., Fogel, John D., Baxter, Ronald D., Silverthorne, Spencer V.
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): DUTTON, BRIAN KEITH
• Application Number:
  US08/183,733
• Time in Patent Office: 475 Days
• Field of Search: 204/406, 204/416, 204/418, 257/253, 257/322, 257/355, 257/414
• US Class Current: 257/253
• CPC Class Codes: G01N 27/4148 Integrated circuits therefor, e.g. fabricated by CMOS processing CMOS processing per se H01L21/82
• CPC Class Codes: H01L 27/0248 for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
• CPC Class Codes: H01L 27/0251 for MOS devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Methods, apparatus and chip fabrication techniques are described which provide electrostatic discharge (ESD) protection to ion-sensitive field effect transistor (ISFET) based devices used to selectively measure ions in a liquid. According to one aspect of the invention, an ESD protection circuit, made up of conventional protective elements, is integrated onto the same silicon chip on which the ISFET is formed, along with an interface that is in contact with the liquid being measured and which does not open up paths for D.C. leakage currents between the ISFET and the liquid. According to a preferred embodiment of the invention, a capacitor structure is used as the interface between the protection circuit and the liquid sample. Further aspects of the invention are directed to methods per se for providing ESD protection for ISFET sensors utilizing the interface means (e.g, capacitor structure) referred to hereinabove, and processes for fabricating the novel interface on a silicon wafer.

Claims

1. Apparatus for selectively measuring ions in a liquid, comprising:

(a) a measuring circuit including a chemically sensitive ion sensor in the form of an ion sensitive field effect transistor (ISFET) formed on a silicon substrate;

(b) an electrostatic discharge (ESD) protection circuit integrated onto said substrate; and

(c) interface means, integrated onto said substrate, for providing an interface between said protection circuit and said liquid, characterized in that said interface means provides a contact with said liquid without opening up paths for D.C. leakage currents between the ISFET and said liquid.

2. Apparatus as set forth in claim 1 wherein said interface means further comprises a capacitor structure.

3. Apparatus as set forth in claim 2 wherein said capacitor structure further comprises:

(a) an electrode in electrical contact with said protection circuit; and

(b) a capacitor dielectric in contact with said electrode and the liquid being measured.

4. Apparatus as set forth in claim 3 wherein said electrode is a metal film.

5. Apparatus as set forth on claim 3 wherein said capacitor dielectric is an oxide of said metal film.

6. Apparatus as set forth in claim 1 wherein said protection circuit further comprises:

(a) a first bi-directional zener diode between said interface means and the source of said ISFET;

(b) a second bi-directional zener diode between said interface means and the drain of said ISFET; and

(c) a uni-directional zener diode between said interface means and said substrate.

7. Apparatus as set forth in claim 6 wherein said interface means further comprises a capacitor structure.

8. Apparatus for providing electrostatic discharge (ESD) protection to an ion sensitive field effect transistor (ISFET) based measuring device used to measure ion activity in a liquid, comprising:

(a) an ESD protection circuit fabricated on a silicon substrate, including;

(a1) a first bi-directional zener diode coupled to the source of said ISFET;

(a2) a second bi-directional zener diode coupled to the drain of said ISFET; and

(a3) a uni-directional zener diode coupled to said substrate; and

(b) interface means, integrated onto said substrate together with said ESD protection circuit, for providing an interface between said protection circuit and said liquid without opening up paths for D.C. leakage currents between the ISFET and said liquid.

9. Apparatus as set forth in claim 8 wherein said interface means is connected in series with each of said first bi-directional zener diode, said second bi-directional zener diode, and said uni-directional zener diode.

10. Apparatus for providing electrostatic discharge (ESD) protection to an ion sensitive field effect transistor (ISFET) based sensor chip used to measure ion activity in a liquid test sample, comprising:

(a) means for transferring charge, built up in said liquid test sample as a result of an ESD event, to the source, drain and substrate of said ISFET; and

(b) interface means, integrated onto said chip together with said means for transferring charge, for providing an interface between said protection circuit and said liquid without opening up paths for D.C. leakage currents between the ISFET and said liquid.

11. Apparatus as set forth on claim 10 wherein said interface means further comprises a capacitor structure.

12. Apparatus for providing electrostatic discharge (ESD) protection to an ion sensitive field effect transistor (ISFET) based sensor chip used to measure ion activity in a liquid test sample, comprising:

(a) means for building up charge in said test sample during an ESD event; and

(b) means for transferring charge built up in said liquid test sample, as a result of said ESD event, to the source, drain and substrate of said ISFET.

13. Apparatus as set forth in claim 12 wherein said means for building up charge and said means for transferring charge are integrated onto said chip.