Two parallel plate electrode type dry etching apparatus

• US 5,415,719 A
• Filed: 10/07/1993
• Issued: 05/16/1995
• Est. Priority Date: 10/08/1992
• Status: Expired due to Term

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Corporation
• Inventors: Akimoto, Takeshi
• Primary Examiner(s): DANG, THI D
• Application Number:
  US08/132,822
• Time in Patent Office: 586 Days
• Field of Search: 156/643, 156/345, 118/723 MA, 118/723 MW, 204/298.37, 204/298.38
• US Class Current: 156/345.38
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32211 Means for coupling power to the plasma
• CPC Class Codes: H01J 37/32238 Windows
• CPC Class Codes: Y10T 156/1798 with liquid adhesive or adhesive activator applying means

Abstract

In a plasma generating chamber, two parallel plate type electrodes are provided, and a dielectric line member is mounted on one of the electrodes. The dielectric line member is connected to a microwave oscillator, to generate gas plasma uniformly in the plasma generating chamber. A high frequency bias power supply source is connected to the other electrode.

Claims

1. A dry etching apparatus comprising:

a plasma generating chamber;

a first electrode mounted within said plasma generating chamber;

a second electrode mounted within said plasma generating chamber and opposing said first electrode, for mounting a substrate to be etched,

a microwave oscillator;

a waveguide connected to said microwave oscillator;

a dielectric line member, connected by an end thereof directly to said waveguide and mounted on said first electrode, for introducing microwaves into said plasma generating chamber from a microwave emission surface of said dielectric line member, said dielectric line member being arranged in parallel with a propagation direction of microwaves propagated from said waveguide; and

a high frequency bias power supply source connected to said second electrode.

2. An apparatus as set forth in claim 1, wherein said dielectric line member is of a plate type.

3. An apparatus as set forth in claim 1, wherein said first electrode is of a plate type located between a surface of said plasma generating chamber and said dielectric line member.

4. An apparatus as set forth in claim 1, wherein said first electrode is of a plate type located on the side of the plasma emission surface of said dielectric line member, said first electrode having a plurality of slits for passing the microwaves therethrough.

5. An apparatus as set forth in claim 4, wherein the slits of said first electrode are nonequidistant stripes.

6. An apparatus as set forth in claim 4, wherein the slits of said first electrode are concentric rectangles.

7. An apparatus as set forth in claim 4, wherein the slits of said first electrode are concentric circles.

8. An apparatus as set forth in claim 4, wherein an area of each of the slits of said first electrode is dependent upon an electric field of said dielectric line member at a location of said each of the slits.

9. An apparatus as set forth in claim 1, further comprising a plurality of magnets equidistantly mounted outside of said plasma generating chamber.