Method for fine-line interferometric lithography

• US 5,415,835 A
• Filed: 09/16/1992
• Issued: 05/16/1995
• Est. Priority Date: 09/16/1992
• Status: Expired due to Term

• Current Assignee: The University of New Mexico
• Original Assignee: The University of New Mexico
• Inventors: Brueck, Steven R. J., Zaidi, Saleem, Chu, An-Shyang
• Primary Examiner(s): Duda, Kathleen
• Application Number:
  US07/945,776
• Time in Patent Office: 972 Days
• Field of Search: 430/1, 430/2, 430/311, 430/394, 430/396, 430/397, 430/945, 430/952, 250/492.1, 250/492.2
• US Class Current: 430/311
• CPC Class Codes: G03F 7/001 Phase modulating patterns, e.g. refractive index patterns
• CPC Class Codes: G03F 7/2022 Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
• CPC Class Codes: G03F 7/704 Scanned exposure beam, e.g. raster-, rotary- and vector scanning mask projection exposure involving relative movement of patterned beam and workpiece during imaging G03F7/70358
• CPC Class Codes: G03F 7/70408 Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
• CPC Class Codes: Y10S 430/146 Laser beam
• CPC Class Codes: Y10S 430/153 Multiple image producing on single receiver

Abstract

In microelectronic processing, the method of producing complex, two-dimensional patterns on a photosensitive layer with dimensions in the extreme submicron range. A photosensitive layer is first exposed to two beams of coherent radiation to form an image of a first interference pattern on the surface of the layer. The layer is subsequently exposed to one or more interference pattern(s) that differ from the first interference pattern in some way, such as by varying the incident angle of the beams, the optical intensity, the periodicity, rotational orientation, translational position, by using complex amplitude or phase masks in one or both of the coherent beams, or a combination of the above. Desired regions of the complex pattern thus produced are isolated with a further exposure of the photosensitive layer using any conventional lithography.

Claims

1. In microelectronic processing, the method of producing a two-dimensional complex pattern on a photosensitive layer said pattern containing structures with dimensions in the extreme submicron range, comprising the steps of:

a) exposing the photosensitive layer for a first time to two beams of coherent radiation which form an image of a first interference pattern on the surface of said layer;

b) exposing the photosensitive layer for at least one subsequent time to two beams of coherent radiation which form an image of at least one subsequent interference pattern, such that said subsequent interference pattern or patterns referenced to the photosensitive layer are each different from the first pattern;

c) isolating desired regions of said complex pattern with a further exposure of the photosensistive layer using any conventional lithography.

2. The method of claim 1 wherein the photosensitive layer is rotated between exposures such that each subsequent interference pattern differs in rotational orientation relative to said first interference pattern.

3. The method of claim 1 wherein the photosensitive layer is translated between exposures such that each subsequent interfere pattern is offset from said first interference pattern.

4. The method of claim 1 wherein the photosensitive layer is both rotated and translated between exposures such that each subsequent interference pattern different from said first interference pattern in both rotational orientation and in translational position.

5. The method of claim 1 wherein at least one of said beams of the second or subsequent exposures of the photosensitive layer is varied in amplitude such that each subsequent interference pattern differs from said first interference pattern.

6. The method of claim 1 wherein at least one of said beams of the second or subsequent exposures of the photosensitive layer is varied in phase such that each subsequent interference pattern differs from said first interference pattern.

7. The method of claim 1 wherein at least one of said beams of the second or subsequent exposures of the photosensitive layer is varied in phase and amplitude such that each subsequent interference pattern differs from said first interference pattern.

8. The method of claim 1 wherein the periodicity of the interference pattern of at least one said second or subsequent exposures of the photosensitive layer is varied such that each subsequent interference pattern differs from said first interference pattern.

9. In microelectronic processing, the method of producing a single isolated line of extreme submicron dimensions on a photosensitive layer comprising the steps of:

a) exposing the photosensitive layer for a first time to two beams of coherent radiation such that an image of an interference pattern is formed on said layer;

b) isolating a portion of a single line within said interference pattern by a second exposure of the photosensitive layer using conventional optical lithography.

10. In microelectronic processing, a method of producing interdigitated structures on a photosensitive layer, comprising the steps of:

a) exposing a defined area of the photosensitive layer with a first interference pattern, having a period p1, said defined area being bounded by two side edges approximately parallel to the lines of constant exposure dose and by top and bottom edges approximately perpendicular to the lines of constant exposure dose;

b) exposing a second defined area containing the top edge of the first defined area with a second interference pattern of period p2 equal to twice p1 and with lines of constant exposure parallel to those of the first interference pattern, said second interference pattern being positioned relative to the first interference pattern such that every other unexposed region of the first exposure pattern within the second defined area is exposed;

c) exposing a third defined area containing the bottom edge of the first defined area with a third interference pattern of period p2 equal to twice p1 and with lines of constant exposure parallel to those of the first interference pattern, said third interference pattern being positioned relative to the first and second interference patterns such that every other unexposed region of the first exposure pattern within the third defined area is exposed, said unexposed regions being connected to unexposed regions alternate to those exposed in step b.

11. The method of claim 10 wherein the second and third exposures of steps b and c are replaced by a single second exposure of period p2 equal to twice p1 and with lines of constant exposure parallel to those of the first interference pattern, and further, in which both interfering beams of the second exposure pass through a mask with two transparent holes that map the second exposure into two areas at the photosensitive layer containing said top edge and said bottom edge, respectively, there further being a net phase shift of 1/2 period between the two resulting interference patterns at the photosensitive layer caused by optical path length differences in the transparent mask areas, said interference patterns being disposed to simultaneously expose every other unexposed region of said first exposure within the illuminated areas.