Patterned chromium barrier layer with flange-like structure

• US 5,415,920 A
• Filed: 12/17/1993
• Issued: 05/16/1995
• Est. Priority Date: 11/06/1991
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Iida, Kenji, Satoh, Kazuaki
• Primary Examiner(s): Ryan, Patrick J.
• Assistant Examiner(s): Jewik, Patrick
• Application Number:
  US08/168,221
• Time in Patent Office: 515 Days
• Field of Search: 428/209, 428/901, 428/457, 428/458, 428/459, 204/192.1, 205/291, 361/751
• US Class Current: 428/209
• CPC Class Codes: H01L 21/4846 Leads on or in insulating or insulated substrates, e.g. metallisation H01L21/4821 takes precedence; metallisation of ceramics in general C04B41/51; printed circuits H05K3/00
• CPC Class Codes: H01L 23/49866 characterised by the materials materials of the substrates H01L23/14, of the lead-frames H01L23/49579
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 2201/0154 Polyimide
• CPC Class Codes: H05K 2201/0317 Thin film conductor layer; Thin film passive component
• CPC Class Codes: H05K 2203/054 Continuous temporary metal layer over resist, e.g. for selective electroplating
• CPC Class Codes: H05K 2203/0597 Resist applied over the edges or sides of conductors, e.g. for protection during etching or plating
• CPC Class Codes: H05K 3/062 consisting of metals or alloys or metallic inorganic compounds H05K3/065 takes precedence
• CPC Class Codes: H05K 3/108 by semi-additive methods; masks therefor characterised by metallic etch mask H05K3/062; electroplating methods or apparatus H05K3/241
• CPC Class Codes: H05K 3/388 by the use of a metallic or inorganic thin film adhesion layer
• CPC Class Codes: Y10S 428/901 Printed circuit
• CPC Class Codes: Y10T 428/24917 including metal layer

Abstract

A conductive pattern layer structure includes an insulating member containing polyimide, a patterned thin film formed on the insulating member, and a patterned conductive layer formed on the thin film. The patterned conductive layer contains copper. Further, the layer structure includes a patterned barrier layer covering an upper surface and side surfaces of the patterned conductive layer to prevent copper from being diffused into another insulating layer formed around the patterned barrier layer.

Claims

1. A conductive pattern layer structure comprising:

an insulating member comprising polyimide;

a patterned thin film formed on the insulating member;

a patterned conductive layer formed on the patterned thin film, said patterned conductive layer comprising copper;

a patterned Cr barrier layer;

an insulating layer formed around the patterned Cr barrier layer;

wherein said patterned Cr barrier layer covers an upper surface and side surfaces of the patterned conductive layer and prevents copper from being diffused into said insulating layer formed around the patterned Cr barrier layer and said patterned Cr barrier layer extending away from said patterned conductive layer side surfaces and along said patterned thin film so as to define at least one patterned Cr barrier layer flange portion.

2. The conductive pattern layer structure as claimed in claim 1, wherein said conductive pattern layer structure comprises a layer structure in which the patterned thin film formed on the insulating member and the patterned Cr barrier layer are stacked in that order.

3. The conductive pattern layer structure as claimed in claim 1, wherein said patterned thin film comprises:

a first thin film which is formed on the insulating member and comprises chromium; and

a second thin film which is formed on the first thin film and comprises copper.

4. The conductive pattern-layer structure as claimed in claim 3, wherein said conductive pattern layer structure comprises a layer structure in which the first thin film, the second thin film and the patterned Cr barrier layer are stacked in that order.

5. The conductive pattern layer structure according to claim 1, wherein said patterned conductive layer has a first portion and a second portion, said second portion being in contact with said patterned thin film and being wider than said first portion;

and said flange portions of said patterned Cr barrier layer being formed on said patterned conductive layer second portion provided on said patterned thin film.