Blue light-emitting diode with high external quantum efficiency

• US 5,416,342 A
• Filed: 06/23/1993
• Issued: 05/16/1995
• Est. Priority Date: 06/23/1993
• Status: Expired due to Term

• Current Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Original Assignee: Cree Research, Inc. (Wolfspeed, Inc.)
• Inventors: Kong, Hua-Shuang, Edmond, John A.
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US08/081,668
• Time in Patent Office: 692 Days
• Field of Search: 257/76, 257/77, 257/91, 257/95, 257/98, 257/99, 257/101, 257/103, 257/102, 257/623
• US Class Current: 257/76
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/34 containing only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

A light emitting diode is disclosed that emits light in the blue portion of the visible spectrum with high external quantum efficiency. The diode comprises a single crystal silicon carbide substrate having a first conductivity type, a first epitaxial layer of silicon carbide on the substrate and having the same conductivity type as the substrate, and a second epitaxial layer of silicon carbide on the first epitaxial layer and having the opposite conductivity type from the first layer. The first and second epitaxial layers forming a p-n junction, and the diode includes ohmic contacts for applying a potential difference across the p-n junction. The second epitaxial layer has side walls and a top surface that forms the top surface of the diode, and the second epitaxial layer has a thickness sufficient to increase the solid angle at which light emitted by the junction will radiate externally from the side walls, but less than the thickness at which internal absorption in said second layer would substantially reduce the light emitted from said top surface of the diode.

Claims

1. A light emitting diode that emits light in the blue portion of the visible spectrum with high external quantum efficiency, said diode comprising:

a single crystal silicon carbide substrate having a first conductivity type;

a first epitaxial layer of silicon carbide on said substrate and having the same conductivity type as said substrate;

a second epitaxial layer of silicon carbide on said first epitaxial layer and having the opposite conductivity type from said first layer,

said first and second epitaxial layers forming a p-n junction; and

ohmic contacts for applying a potential difference across said p-n junction; and

wherein

said second epitaxial layer has side walls and a top surface that define the top surface and top side walls of said diode, and said second epitaxial layer is sufficiently thick to increase the solid angle at which light emitted by the junction will radiate externally from said side walls, but less than the thickness at which internal absorption in said second layer would substantially reduce the light emitted from said top surface of the diode.

2. A light emitting diode according to claim 1 wherein said second epitaxial layer has a thickness of about 25 microns.

3. A light emitting diode according to claim 1 wherein said top surface has an area of about 200 by 200 square microns.

4. A light emitting diode according to claim 1 wherein at least one of said ohmic contacts comprises an unannealed metal contact, said metal contact forming a reflective surface from which light generated by said diode will reflect rather than be absorbed.

5. A light emitting diode according to claim 4 and further comprising a highly doped layer between said unannealed metal contact and said diode, said highly doped layer having the same conductivity type as the portion of the diode to which it is adjacent, and said highly doped layer having a dopant concentration sufficient to lower the barrier between said metal contact and said diode portion sufficiently to provide ohmic behavior between said unannealed metal and said diode portion, said highly doped layer being thin enough to prevent the dopant concentration from substantially reducing the light emitted from said top surface of said diode.

6. A light emitting diode according to claim 4 wherein said metal contact is selected from the group consisting of aluminum, gold, platinum, and silver.

7. A light emitting diode according to claim 1 wherein the silicon carbide has a polytype selected from the group consisting of the 6H, 4H, and 15R polytypes.

8. A light emitting diode according to claim 1 wherein at least one of said ohmic contacts comprises a layer of indium-tin-oxide (ITO) on said second epitaxial layer, said ITO layer having a thickness sufficient to carry current to said second layer sufficient for said diode to emit light, but thin enough to remain substantially transparent.

9. A light emitting diode according to claim 1 wherein one of said ohmic contacts is to said substrate and the other is to said second epitaxial layer.

10. A light emitting diode that emits light in the blue portion of the visible spectrum with high external quantum efficiency, said diode comprising:

a single crystal silicon carbide substrate having a first conductivity type;

a first epitaxial layer of silicon carbide on said substrate and having the same conductivity type as said substrate;

a second epitaxial layer of silicon carbide on said first epitaxial layer and having a compensated conductivity type opposite from the conductivity type of said first layer,

said first and second epitaxial layers forming a p-n junction;

ohmic contacts for applying a potential difference across said p-n junction; and

a third epitaxial layer upon said second epitaxial layer and having the same conductivity type as said second epitaxial layer, said third layer having side walls and a top surface that forms the top surface of said diode, and said third epitaxial layer having a thickness sufficient to increase the solid angle at which light emitted by the junction will radiate externally from said side walls, but less than the thickness at which internal absorption in said third layer would substantially reduce the light emitted from said top surface of the diode.

11. A light emitting diode according to claim 10 wherein said first epitaxial layer further comprises a compensated layer adjacent said compensated second epitaxial layer, and a predominantly uncompensated layer adjacent said substrate.

12. A light emitting diode according to claim 11 wherein said substrate and said first epitaxial layers are n-type conductivity and said second and third layers are p-type conductivity.

13. A light emitting diode according to claim 11 wherein said substrate and said first epitaxial layers are p-type conductivity and said second and third layers are n-type conductivity.

14. A light emitting diode according to claim 10 wherein said third layer is predominantly uncompensated.

15. A light emitting diode according to claim 10 wherein said substrate is predominantly uncompensated.

16. A light emitting diode according to claim 10 wherein said third epitaxial layer has a thickness of about 25 microns.

17. A light emitting diode according to claim 10 wherein said top surface has an area of at least about 200 by 200 square microns.

18. A light emitting diode according to claim 10 wherein said epitaxial layers form a mesa structure upon said substrate.

19. A light emitting diode according to claim 10 wherein one of said ohmic contacts comprises an unannealed metal contact adjacent said third layer, said metal contact forming a reflective surface from which light generated by said diode will reflect rather than be absorbed.

20. A light emitting diode according to claim 19 and further comprising a highly doped layer between said third layer and said unannealed metal contact, said highly doped layer having the same conductivity type as said third layer, and said highly doped layer having a dopant concentration sufficient to lower the barrier between said metal contact and said third epitaxial layer sufficiently to provide ohmic behavior between said unannealed metal and said third epitaxial layer, said highly doped layer being thin enough to prevent the dopant concentration from substantially reducing the light emitted from said top surface of said third epitaxial layer.

21. A light emitting diode according to claim 10 wherein one of said ohmic contacts comprises an unannealed metal contact adjacent said substrate, said metal contact forming a reflective surface from which light generated by said diode will reflect rather than be absorbed.

22. A light emitting diode according to claim 21 and further comprising a highly doped layer between said substrate and said unannealed metal contact, said highly doped layer having the same conductivity type as said substrate, and said highly doped layer having a dopant concentration sufficient to lower the barrier between said metal contact and said substrate sufficiently to provide ohmic behavior between said unannealed metal and said substrate, said highly doped layer being thin enough to prevent the dopant concentration from substantially reducing the light emitted from said substrate.

23. A light emitting diode according to claim 21 wherein said metal contact is selected from the group consisting of aluminum, gold, platinum, and silver.

24. A light emitting diode according to claim 10 wherein the silicon carbide has a polytype selected from the group consisting of the 6H, 4H, and 15R polytypes.

25. A light emitting diode according to claim 10 wherein at least one of said ohmic contacts comprises a layer of indium-tin-oxide (ITO) on said third epitaxial layer, said ITO layer having a thickness sufficient to carry current to said third layer sufficient for said diode to emit light, but thin enough to remain substantially transparent.

26. A light emitting diode according to claim 10 wherein one of said ohmic contacts is to said substrate and the other is to said third epitaxial layer.

27. A light emitting diode that emits light in the blue portion of the visible spectrum with high external quantum efficiency, said diode comprising:

a single crystal silicon carbide substrate having a first conductivity type;

a first epitaxial layer of silicon carbide on said substrate and having the same conductivity type as said substrate;

a second epitaxial layer of silicon carbide on said first epitaxial layer and having the opposite conductivity type from said first layer,

said first and second epitaxial layers forming a p-n junction; and

ohmic contacts for applying a potential difference across said p-n junction; and

wherein

said second layer has side walls and a top surface that forms the top surface of said diode, and said second epitaxial layer has a thickness of about 25 microns and said top surface has an area of about 200 by 200 square microns.

28. A light emitting diode according to claim 27 wherein at least one of said ohmic contacts comprises an unannealed metal contact adjacent said second layer, said metal contact forming a reflective surface from which light generated by said diode will reflect rather than be absorbed.

29. A light emitting diode according to claim 28 and further comprising a highly doped layer between said second layer and said unannealed metal contact, said highly doped layer having the same conductivity type as said second layer, and said highly doped layer having a dopant concentration sufficient to lower the barrier between said metal contact and said second epitaxial layer sufficiently to provide ohmic behavior between said unannealed metal and said second epitaxial layer, said highly doped layer being thin enough to prevent the dopant concentration from substantially reducing the light emitted from said top surface of said second epitaxial layer.

30. A light emitting diode according to claim 28 wherein said metal contact is selected from the group consisting of aluminum, gold, platinum, and silver.

31. A light emitting diode according to claim 27 wherein the silicon carbide has a polytype selected from the group consisting of the 6H, 4H, and 15R polytypes.

32. A light emitting diode according to claim 27 wherein at least one of said ohmic contacts comprises a layer of indium-tin-oxide (ITO) on said second epitaxial layer, said ITO layer having a thickness sufficient to carry current to said second layer sufficient for said diode to emit light, but thin enough to remain substantially transparent.

33. A light emitting diode according to claim 27 wherein one of said ohmic contacts is to said substrate and the other is to said second epitaxial layer.

34. A light emitting diode according to claim 27 wherein said second epitaxial layer is formed of a compensated layer adjacent said junction and a substantially uncompensated layer on said compensated layer.

35. A light emitting diode that emits light in the blue portion of the visible spectrum with high external quantum efficiency, said diode comprising:

a single crystal silicon carbide substrate having a first conductivity type;

a first epitaxial layer of silicon carbide on said substrate and having the same conductivity type as said substrate;

a second epitaxial layer of silicon carbide on said first epitaxial layer and having the opposite conductivity type from said first layer,

said first and second epitaxial layers forming a p-n junction; and

a highly reflective metal ohmic contact adjacent said second layer, said metal contact forming a highly reflective surface from which light generated by said diode will reflect rather than be absorbed.

36. A light emitting diode according to claim 35 and further comprising a highly doped layer between said second layer and said unannealed metal contact, said highly doped layer having the same conductivity type as said second layer, and said highly doped layer having a dopant concentration sufficient to lower the barrier between said metal contact and said second epitaxial layer sufficiently to provide ohmic behavior between said unannealed metal and said second epitaxial layer, said highly doped layer being thin enough to prevent the dopant concentration from substantially reducing the light emitted from said top surface of said second epitaxial layer.

37. A light emitting diode according to claim 36 wherein the dopant concentration of said highly doped layer is greater than about 2E19.

38. A light emitting diode according to claim 36 wherein the dopant concentration of said highly doped layer is greater than about 5E19.

39. A light emitting diode according to claim 35 wherein said second epitaxial layer has side walls and a top surface that forms the top surface of said diode, and said second epitaxial layer has a thickness sufficient to increase the solid angle at which light emitted by the junction will radiate externally from said side walls, but less than the thickness at which internal absorption in said second layer would substantially reduce the light emitted from said top surface of the diode.

40. A light emitting diode according to claim 35 wherein said second layer has side walls and a top surface that forms the top surface of said diode, and said second epitaxial layer has a thickness of about 25 microns and said top surface has an area of about 200 by 200 square microns.

41. A light emitting diode according to claim 35 further comprising a layer of indium-tin-oxide (ITO) on said substrate, said ITO layer having a thickness sufficient to carry current to said substrate sufficient for said diode to emit light, but thin enough to remain substantially transparent.

42. A light emitting diode according to claim 35 wherein said metal contact is selected from the group consisting of aluminum, gold, platinum, and silver.

43. A light emitting diode according to claim 35 wherein the silicon carbide has a polytype selected from the group consisting of the 6H, 4H, and 15R polytypes.

44. A light emitting diode that emits light in the blue portion of the visible spectrum with high external quantum efficiency, said diode comprising:

a single crystal silicon carbide substrate having a first conductivity type;

a first epitaxial layer of silicon carbide on said substrate and having the same conductivity type as said substrate;

a second epitaxial layer of silicon carbide on said first epitaxial layer and having the opposite conductivity type from said first layer,

said first and second epitaxial layers forming a p-n junction; and

a transparent conductive contact on said second layer.

45. A light emitting diode according to claim 44 wherein said transparent conductive contact comprises indium-tin-oxide (ITO).

46. A light emitting diode according to claim 45 wherein said indium-tin-oxide covers substantially the entire surface of said second layer.

47. A light emitting diode according to claim 44 wherein said second epitaxial layer has side walls and a top surface that forms the top surface of said diode, and said second epitaxial layer has a thickness sufficient to increase the solid angle at which light emitted by the junction will radiate externally from said side walls, but less than the thickness at which internal absorption in said second layer would substantially reduce the light emitted from said top surface of the diode.

48. A light emitting diode according to claim 47 wherein said top surface has an area of at least about 200 by 200 square microns.

49. A light emitting diode according to claim 44 and further comprising an unannealed metal ohmic contact to said substrate, said metal contact forming a reflective surface from which light generated by said diode will reflect rather than be absorbed.

50. A light emitting diode according to claim 49 and further comprising a highly doped layer between said unannealed metal contact and said substrate, said highly doped layer having the same conductivity type as said substrate, and said highly doped layer having a dopant concentration sufficient to lower the barrier between said metal contact and said substrate to provide ohmic behavior between said unannealed metal and said diode portion, and wherein the thickness of the highly doped layer is less than the thickness at which said highly doped layer would substantially reduce the light emitted from said substrate.

51. A light emitting diode according to claim 49 wherein said metal contact is selected from the group consisting of aluminum, gold, platinum, and silver.

52. A light emitting diode according to claim 44 wherein the silicon carbide has a polytype selected from the group consisting of the 6H, 4H, and 15R polytypes.

53. A light emitting diode that emits light in the blue portion of the visible spectrum with high external quantum efficiency, said diode comprising:

a single crystal silicon carbide substrate having a first conductivity type;

a first epitaxial layer of silicon carbide on said substrate and having the same conductivity type as said substrate;

a second epitaxial layer of silicon carbide on said first epitaxial layer and having the opposite conductivity type from said first layer,

said first and second epitaxial layers forming a p-n junction;

an unannealed metal ohmic contact adjacent said second layer, said metal contact forming a reflective surface from which light generated by said diode will reflect rather than be absorbed; and

a highly doped layer between said second layer and said unannealed metal contact, said highly doped layer having the same conductivity type as said second layer, and said highly doped layer having a dopant concentration sufficient to lower the barrier between said metal contact and said second epitaxial layer sufficiently to provide ohmic behavior between said unannealed metal and said second epitaxial layer, said highly doped layer being thin enough to prevent the dopant concentration from substantially reducing the light emitted from said top surface of said second epitaxial layer.