Copper paste for forming conductive thick film
First Claim
1. Copper paste for forming a conductive thick film containing solid components including 80 wt. % to 95 wt. % of spherical first copper powder of 1 μ
- m to 10 μ
m in mean particle diameter, 0.5 wt. % to 15 wt. % of second copper powder of less than 1 μ
m in mean particle diameter and 1 wt. % to 15 wt. % of glass frit of 0.5 μ
m to 2.0 μ
m in mean particle diameter, and an organic vehicle.
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Accused Products
Abstract
Disclosed herein is copper paste for forming a conductive thick film, which contains 80 wt. % to 95 wt. % of spherical first copper powder of 1 μm to 10 μm in mean particle diameter, 0.5 wt. % to 15 wt. % of second copper powder of less than 1 μm in mean particle diameter, and 1 wt. % to 15 wt. % of glass frit of 0.5 μm to 2.0 μm in mean particle diameter respectively as solid components. A conductive thick film obtained by applying the copper paste onto a substrate and baking the same exhibits excellent solderability as well as high adhesive strength to the substrate, and this adhesive strength is excellently maintained even if the thick film is exposed to a heat hysteresis.
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Citations
3 Claims
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1. Copper paste for forming a conductive thick film containing solid components including 80 wt. % to 95 wt. % of spherical first copper powder of 1 μ
- m to 10 μ
m in mean particle diameter, 0.5 wt. % to 15 wt. % of second copper powder of less than 1 μ
m in mean particle diameter and 1 wt. % to 15 wt. % of glass frit of 0.5 μ
m to 2.0 μ
m in mean particle diameter, and an organic vehicle. - View Dependent Claims (2, 3)
- m to 10 μ
Specification