Method for forming continuous oxide superconducting layer having difference thickness portions for superconducting device

• US 5,418,213 A
• Filed: 05/18/1993
• Issued: 05/23/1995
• Est. Priority Date: 10/06/1989
• Status: Expired due to Fees

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: Tanaka, Saburo, Itozaki, Hideo, Yazu, Shuji
• Primary Examiner(s): Dang, Thi
• Application Number:
  US08/064,331
• Time in Patent Office: 735 Days
• Field of Search: 505/728, 505/1, 156/643, 156/656, 156/655, 156/651, 156/652, 156/659.1, 156/661.1
• US Class Current: 505/329
• CPC Class Codes: H10N 60/0688 Etching
• CPC Class Codes: H10N 60/0941 comprising high-Tc ceramic materials
• CPC Class Codes: Y10S 505/728 Etching

Abstract

A method for forming an oxide superconductor thin film having different thickness portions, in a process for manufacturing a superconductor device, includes the step of forming an oxide superconductor thin film having a uniform thickness on a substrates. A portion of the oxide superconductor thin film is etch-removed so that the oxide superconductor thin film has a thin thickness portion. Preferably, before the etching, the oxide superconductor thin film is coated with a metal layer, and the oxide superconductor thin film and the metal layer are etched together by means of a physical dry etching process.

Claims

1. A process for manufacturing a Josephson junction superconducting device which includes a metal barrier layer sandwiched between a pair of oxide superconductor thin films layers, said process comprising the steps of:

depositing a first oxide superconductor thin film layer over a surface of a substrate;

depositing a first metal layer over a surface of the first oxide superconductor thin film layer;

depositing a second oxide superconductor thin film layer over a surface of the first metal layer;

depositing a second metal layer over a surface of the second oxide superconducting thin film layer;

forming a resist pattern on a surface of the second metal layer wherein a portion of the second metal layer is covered with said resist;

removing an exposed portion of said second metal layer such that said covered portion of the second metal layer forms a first electrode;

forming a resist pattern over a portion of a surface of the second oxide superconductor thin film layer wherein said resist layer completely covers said first electrode and leaves a portion of the second oxide superconductor thin film layer exposed;

forming a Josephson junction by removing the portion of the second oxide superconductor thin film layer that is exposed and not covered by said resist pattern, a portion of the first metal layer, and a portion of the first oxide superconductor thin film layer; and

forming a second electrode on an exposed portion of the first oxide superconductor thin film layer.

2. The process for manufacturing a Josephson junction superconducting device according to claim 1 wherein an insulating layer is formed to cover all the surface area of the device except the portion of said first oxide superconductor thin film layer for said second electrode and the portion of said first electrode.

3. The process for manufacturing a Josephson junction superconducting device according to claim 1 wherein metal layers are formed to cover said first electrode and at least a portion of an upper surface of said insulating layer.

4. The process for manufacturing a Josephson junction superconducting device according to claim 1 wherein each of said first and second oxide superconductor thin films consists of Y₁ Ba₂ Cu₃ O_x (6<

x≦

     7), Bi₂ Sr₂ Ca₂ Cu₃ O_y (7≦

y≦

10), or Tl₂ Ba₂ Ca₂ Cu₃ O_z (7≦

z≦

10).