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Method for forming continuous oxide superconducting layer having difference thickness portions for superconducting device

  • US 5,418,213 A
  • Filed: 05/18/1993
  • Issued: 05/23/1995
  • Est. Priority Date: 10/06/1989
  • Status: Expired due to Fees
First Claim
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1. A process for manufacturing a Josephson junction superconducting device which includes a metal barrier layer sandwiched between a pair of oxide superconductor thin films layers, said process comprising the steps of:

  • depositing a first oxide superconductor thin film layer over a surface of a substrate;

    depositing a first metal layer over a surface of the first oxide superconductor thin film layer;

    depositing a second oxide superconductor thin film layer over a surface of the first metal layer;

    depositing a second metal layer over a surface of the second oxide superconducting thin film layer;

    forming a resist pattern on a surface of the second metal layer wherein a portion of the second metal layer is covered with said resist;

    removing an exposed portion of said second metal layer such that said covered portion of the second metal layer forms a first electrode;

    forming a resist pattern over a portion of a surface of the second oxide superconductor thin film layer wherein said resist layer completely covers said first electrode and leaves a portion of the second oxide superconductor thin film layer exposed;

    forming a Josephson junction by removing the portion of the second oxide superconductor thin film layer that is exposed and not covered by said resist pattern, a portion of the first metal layer, and a portion of the first oxide superconductor thin film layer; and

    forming a second electrode on an exposed portion of the first oxide superconductor thin film layer.

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