High power solid state R.F. amplifier
First Claim
1. A high power, radio frequency, linear amplifier for amplifying a radio frequency, input signal in the range between about 100 kHz and 100 MHz so as to produce a high power output signal replica of said input signal, said amplifier comprising:
- at least one non-RF high voltage, power switching, MOSFET device having a gate, source and drain electrode extending in a coplanar relation and having a lead inductance on the order of between about 8 nH and about 15 nH;
driving means for connecting said input signal between the gate and source electrodes of said device; and
coupling and matching means, connected to the drain electrode of said device, for providing said output signal replica of solid input signal.
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Accused Products
Abstract
Although known because of high packaging inductances and thought to be wholly unsuitable for RF amplifiers, high voltage power switching MOSFETs of the type having coplanar leads having inductances on the order of between 8 nH and 15 nH are used in an RF amplifier. The individual devices operate on a high impedance load line to render the high inductance insignificant. The circuit configuration presents a high impedance to the output, eliminating the need for expensive combiners and low inductance packaging.
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Citations
17 Claims
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1. A high power, radio frequency, linear amplifier for amplifying a radio frequency, input signal in the range between about 100 kHz and 100 MHz so as to produce a high power output signal replica of said input signal, said amplifier comprising:
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at least one non-RF high voltage, power switching, MOSFET device having a gate, source and drain electrode extending in a coplanar relation and having a lead inductance on the order of between about 8 nH and about 15 nH; driving means for connecting said input signal between the gate and source electrodes of said device; and coupling and matching means, connected to the drain electrode of said device, for providing said output signal replica of solid input signal. - View Dependent Claims (2, 3)
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4. A high power, radio frequency, linear amplifier for amplifying a radio frequency, input signal so as to produce a high power output signal replica of said input signal at a frequency between about 100 kHz and 100 MHz, said amplifier comprising:
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a first plurality of non-RF high voltage, power switching, MOSFET devices connected directly in parallel, each of said devices having a gate, source and drain electrode coplanar with one another and having lead inductances of between about 8 nH and 15 nH; driving means for connecting said input signal between the gates and sources of said plurality of devices; and coupling and matching means, connected to the drain electrodes of said plurality of devices, for providing said output signal replica of said input signal. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification