Susceptor drive and wafer displacement mechanism

• US 5,421,893 A
• Filed: 11/29/1993
• Issued: 06/06/1995
• Est. Priority Date: 02/26/1993
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Perlov, Ilya
• Primary Examiner(s): BUEKER, RICHARD R
• Application Number:
  US08/159,062
• Time in Patent Office: 554 Days
• Field of Search: 118/725, 118/729, 118/730
• US Class Current: 118/725
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/68742 characterised by a lifting arrangement, e.g. lift pins
• CPC Class Codes: H01L 21/68792 characterised by the construction of the shaft

Abstract

A thermal reaction chamber for semiconductor wafer processing operations comprising:

(i) a susceptor for supporting a semiconductor wafer within the chamber and having a plurality of apertures formed vertically therethrough;

(ii) displacer means for displacing the susceptor vertically between at least a first and a second position;

(iii) a plurality of wafer support elements, each of which is suspended to be vertically moveable within said apertures and each of which extends beyond the underside of the susceptor; and

(iv) means for restricting the downward movement of the wafer support elements. As the susceptor is displaced from its first position through an intermediate position before the second position, the means for restricting operate to stop the continued downward movement of the wafer support elements thereby causing the elements to move vertically upwards with respect to the downwardly moving susceptor and separate the wafer from the susceptor.

Claims

1. A thermal reaction chamber for semiconductor wafer processing operations comprising:

(i) a susceptor for supporting a semiconductor wafer within the chamber;

(ii) displacer means for displacing the susceptor vertically between at least a first and a second position;

(iii) a plurality of wafer support elements, each of which is suspended to be vertically moveable with respect to the susceptor and each of which extends beyond the underside of the susceptor; and

(iv) means for restricting the downward movement of the wafer support elements whereby,

as the susceptor is displaced from its first position through an intermediate position before the second position, the means for restricting operate to stop the continued downward movement of the wafer support elements thereby causing the elements to move vertically upwards with respect to the downwardly moving susceptor and separate the wafer from the susceptor.

2. A thermal reactor as recited in claim 1, further comprising means for imparting rotary motion to the susceptor.

3. A thermal reactor as recited in claim 2, wherein the susceptor has a plurality of apertures formed vertically therethrough and wherein the wafer support elements are suspended within the apertures formed through the susceptor.

4. A thermal reactor as recited in claim 3, wherein the means for restricting the downward movement includes a wafer support cradle positioned below the susceptor whereby,

when the susceptor is in its first position, the wafer support elements are suspended clear of the cradle and as the susceptor moves through the intermediate position the wafer support elements are engaged by the cradle and prevented from continuing to move downward.

5. A thermal reactor as recited in claim 4, wherein said displacer means is also operable to displace the cradle vertically downward.

6. A thermal reactor as recited in claim 5, wherein said displacer means is operable to displace the cradle vertically downward whilst simultaneously displacing the susceptor from the second position to a third, lower position.

7. A thermal reactor as recited in claim 6, wherein each said wafer support element is constituted by a pin having an enlarged head and a body and wherein the head is, in the first position of the susceptor, located in an enlarged portion of its respective aperture and the body of the pin is suspended below said enlarged portion.

8. A thermal reactor as recited in claim 7, wherein the head of each pin is frusto-conical in shape and the enlarged portion of the aperture is complementally shaped, such that, when the pin is suspended from the susceptor, the frusto-conical head seals against the interior of the enlarged portion of the aperture and substantially prevents the movement of semiconductor wafer processing gases through the apertures.

9. A thermal reactor as recited in claim 6, wherein the means for imparting rotary motion to the susceptor includes:

(i) a drive shaft for supporting and transferring rotary motion to the susceptor;

(ii) a motor; and

(iii) a torque transfer means for transferring torque from the motor to the drive shaft.

10. A thermal reactor as recited in claim 9, wherein the torque transfer means includes:

(i) a rotationally-fixed, hollow pedestal;

(ii) a cup rotationally which is mounted about the pedestal, which is engaged by the motor and which includes a first ring of magnetic elements disposed along its interior surface; and

(iii) a base which is rotationally mounted inside the hollow pedestal and which supports the drive shaft and which includes a second ring of magnetic elements disposed about its outer perimeter to be concentric with the first ring of magnetic elements, whereby when the cup is rotated by the motor, the first ring of magnetic elements transfers rotary motion to the second ring of magnetic elements, thereby rotating the drive shaft.

11. A thermal reactor as recited in claim 10, wherein the first ring of magnetic elements is constituted by permanent magnets and the second ring by elements of magnetic material.

12. A thermal reactor as recited in claim 11, wherein the displacer means includes:

(i) a first pneumatic cylinder for vertically displacing the cradle; and

(ii) a second pneumatic cylinder for vertically displacing the drive shaft;

wherein

the first cylinder is attached to a fixed mounting and the second cylinder is attached to the first cylinder, so that operation of the first cylinder causes vertical displacement of the cradle and of the second cylinder thereby displacing the susceptor, while operation of the second cylinder causes only displacement of the susceptor.

13. A thermal reactor as recited in claim 2 wherein the susceptor further has a plurality of pockets formed in its operational underside and wherein the means for imparting rotary motion to the susceptor includes a susceptor drive cradle having a pluralty of susceptor drive elements, each receivable in a corresponding one of the pockets formed in the underside of the susceptor, whereby the susceptor is aligned with respect to the means for restricting the downward movement of the wafer support elements, when the susceptor drive elements are received in the pockets.

14. A thermal reactor as recited in claim 13 wherein at least three pockets are formed in the operational underside of the susceptor and are arranged such that one pocket is located at and at least two pockets are displaced from the center of the underside of the susceptor.

15. A processing chamber for a substrate, comprising:

a substrate support for supporting a substrate and having a plurality of apertures formed in parallel therethrough; and

a plurality of pins movable relative to said substrate support within respective ones of said apertures between respective first positions whereat said pins support said substrate above said substrate support and respective second positions whereat said pins are held within said substrate support, said pins having bottom ends projecting below a bottom surface of said substrate support, said substrate being supportable by said substrate support when said pins are at said second positions; and

at least one support cradle member for selectively contacting said bottom ends of said pins for moving them between said first and second positions relative to said substrate support.

16. A processing chamber as recited in claim 15, wherein said substrate support with said pins attached is rotatable about an axis perpendicular to a top surface of said substrate support and disposed in a central position of said top surface and said at least one cradle member is stationary during a rotation of said support.

17. A processing chamber as recited in claim 15, wherein said apertures include countersunk portions adjacent to a top surface of said substrate support and wherein said pins having frusto-conical heads engageable with said countersunk portions.

18. A processing chamber as recited in claim 15, wherein said substrate support is vertically movable between

(i) a third position whereat said at least one support cradle member contacts said bottom ends of said pins and said pins are at said first positions and

(ii) a fourth position whereat said at least one support cradle member does not contact said bottom ends of said pins and said pins are at said second positions.

19. A processing chamber as recited in claim 18, wherein said at least one cradle member is comprised of a support cradle vertically movable independently of said substrate support.

20. A processing chamber as recited in claim 15, further comprising a thermal reaction chamber enclosing said substrate support and said at least one support cradle member.

21. A processing chamber as recited in claim 20 wherein the substrate support further has a plurality of pockets formed in its operational underside and wherein at least one cradle member includes a pluralty of cradle elements, each receivable in a corresponding one of the pockets formed in the underside of the substrate support, whereby the substrate support is aligned with respect to the thermal reaction chamber, when the cradle elements are received in the pockets.

22. A processing chamber as recited in claim 21 wherein at least three pockets are formed in the operational underside of the substrate support and are arranged such that one pocket is located at and at least two pockets are displaced from the center of the underside of the substrate support.

23. A method of moving and supporting a wafer comprising the steps of:

inserting movable pins within respective apertures passing through a substrate support, said pins being engageable with said substrate support at a first position of said pins relative to said substrate support and having bottom ends projecting below a bottom of said substrate support;

moving at least one contact member vertically toward said substrate support relative to said substrate support to contact said bottom ends of said pins and thereafter to move vertically said bottom ends towards said substrate support, whereby top ends of said pins extend beyond a top surface of said substrate support for holding a substrate apart from said substrate;

moving said at least one contact member vertically away from said substrate support relative to said substrate support and out of contact with said bottom ends of said pins while said pins are holding said substrate, whereby said pins are held at said first position within said substrate support and said substrate is supported by said top surface of said substrate support.

24. A method as recited in claim 23, further comprising rotating said substrate support and said pins about a vertical axis passing through said substrate held by said top surface of said substrate support while said at least one contact member is not in contact with said pins.

25. A method as recited in claim 24, wherein said at least one contact member is not rotated during rotating step.

26. A method as recited in claim 23, wherein said two moving steps comprise moving said substrate support while holding stationary said at least one contact member.

27. A method as recited in claim 23, wherein said two moving steps comprising moving both said substrate support and said at least one contact member.