Dry-etching process simulator

• US 5,421,934 A
• Filed: 03/26/1993
• Issued: 06/06/1995
• Est. Priority Date: 03/26/1993
• Status: Expired due to Term

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Misaka, Akio, Kubbota, Masafumi, Harafugi, Kenji, Nomura, Noboru
• Primary Examiner(s): DANG, THI D
• Application Number:
  US08/037,298
• Time in Patent Office: 802 Days
• Field of Search: 156/626, 156/627, 156/643, 156/646, 204/192.33
• US Class Current: 216/59
• CPC Class Codes: G06F 30/23 using finite element methods [FEM] or finite difference methods [FDM]
• CPC Class Codes: H01L 21/30 Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 manufacture of electrodes thereon H01L21/28

Abstract

A new surface reaction model has been presented to simulate topological evolutions by taking into account the existence of absorbed radicals on the substrate surface. The model treats the etching rate as a function of the coverage ratio by absorbed radicals on the surface. Based on the model, a two-dimensional topography simulator has been provided. The simulator is applied to silicon-dioxide trench teachings made by hydrofluorcarbon gases. The topography simulator is used in a dry-etching process for realizing sub-half micron patternings.

Claims

1. A dry-etching process wherein minute patterns formed in a lithography process are used as mask and an operation unit in a topography simulator evaluates etching and deposition rates for determining the optimum etching conditions in forming on a substrate patterns of the same sizes as that of the mask, said rate evaluation process in the dry-etching process comprising the steps of:

(a) evaluating a coverage ratio by absorbed materials on individual small areas of the substrate surface from the density of the respective radicals and ions in an active gas plasma and the reaction rate of the respective radicals and ions, and

(b) evaluating etching and deposition rates on the individual small areas of the substrate surface from the coverage ratio by the absorbed materials.

2. A dry-etching process according to claim 1 wherein the evaluation of the coverage ratio by the absorbed materials on individual small areas of the substrate comprises the steps of:

(a) evaluating the amount of absorption of the respective absorbed materials per unit time and the amount of desorption of the respective absorbed materials per unit time and

(b) evaluating such a ratio of the absorbed materials as to equal the amount of absorption and the amount of desorption per unit time.

3. A dry-etching process according to claim 1 wherein the evaluation of the etching and deposition rates comprises the step of:

(a) considering the situation where the area is entirely covered with the absorbed materials as deposition and the situation where the area is only partially covered with the absorbed materials as etching.

4. A dry-etching process according to claim 1 wherein the etching and deposition rate evaluation involves

(a) a step of determining a reaction rate by combinations of the absorbed materials and the substrate in proportion to the coverage ratios by the respective absorbed materials,

(b) a step of determining a reaction rate by combinations of the radicals and ion arriving at the substrate surface and the substrate in proportion to the extent to which the area is not covered with the absorbed materials and to the fluxes of the individual incoming particles,

(c) a step of determining a reaction rate by combinations of the absorbed materials, the substrate and the individual incoming radicals and ions in proportion to the coverage ratios of the individual absorbed materials and the fluxes of the individual incoming particles, and

(d) a step of combining these reaction rates for evaluating the etching and deposition rates.

5. A dry-etching process wherein minute patterns formed in a lithography process are used as mask and an operation unit in a topography simulator evaluates etching and deposition rates for determining the optimum etching conditions in forming on a substrate patterns of the same sizes as that of the mask, said rate evaluation process in the dry-etching process comprising the steps of:

(a) evaluating the coverage ratio by absorbed materials on individual small areas of the substrate surface, and

(b) evaluating etching and deposition rates on the individual small areas of the substrate surface from the coverage ratio by the absorbed materials.

6. A dry-etching process wherein minute patterns formed in a lithography process are used as mask and an operation unit in a topography simulator evaluates etching and deposition rates for determining the optimum etching conditions in forming on a substrate patterns of the same sizes as that of the mask, said dry-etching process comprising the step of:

(a) taking into account the amount of reaction between absorbed materials and a substrate for etching rate evaluation when etching profiles are simulated during the dry-etching process.