Plasma etching system

• US 5,423,936 A
• Filed: 10/19/1993
• Issued: 06/13/1995
• Est. Priority Date: 10/19/1992
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd., Hitachi Tokyo Electronics Company Limited (Hitachi, Ltd.), Tokyo Electron Limited
• Original Assignee: Hitachi, Ltd., Hitachi Tokyo Electronics Company Limited (Hitachi, Ltd.), Tokyo Electron Limited, Tokyo Electron Yamanashi Ltd. (Tokyo Electron Limited)
• Inventors: Ito, Yoshikazu, Matsuo, Hiromitsu, Miura, Yutaka, Tozawa, Shigeki, Nozawa, Akira, Iimuro, Shunichi, Tomita, Kazushi, Hirano, Motohiro
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): BASKIN, JONATHAN
• Application Number:
  US08/138,039
• Time in Patent Office: 602 Days
• Field of Search: 156/345, 156/643, 118/723 E, 204/298.31, 204/298.33
• US Class Current: 156/345.34
• CPC Class Codes: H01J 2237/3347 bottom of holes or trenches
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32532 Electrodes
• CPC Class Codes: H01J 37/32724 Temperature

Abstract

The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m² /hr.

Claims

1. A plasma etching system, comprising:

a process chamber enclosing a plasma;

means for evacuating said process chamber;

a chuck electrode for supporting a substrate;

a shower electrode for forming a plasma discharge circuit between said chuck electrode and said shower electrode;

a power source for applying a plasma voltage between the chuck electrode and said shower electrode; and

gas supply means for supplying a plasma-forming gas into the process chamber;

wherein the shower electrode includes;

a cathode plate facing a substrate on the chuck electrode;

a cooling plate laminated on said cathode plate to cool the cathode plate;

a number of gas inlet holes formed in said cooling plate for introducing said gas from said gas supply means;

a number of small holes formed in the cathode plate to communicate with said gas inlet holes, each of said small holes having an open end facing the chuck electrode being smaller in diameter than the gas inlet holes, and having a stepped portion in a region where said small hole communicates with the gas inlet hole; and

control means for controlling the gas supply means such that said gas flows through the stepped portion between the small hole and the gas inlet hole at a mass flow rate of at least 620 kg/m² /hour, thereby preventing a component of said gas from being deposited on the stepped portion.

2. The plasma etching system according to claim 1, wherein a spurting region of the plasma-forming gas from the small holes made in said shower electrode covers a range of up to 180 mm from a center of the shower electrode.

3. The plasma etching system according to claim 1, wherein a spurting region of the plasma-forming gas from the small holes made in said shower electrode covers a range of up to 180 mm and not smaller than 120 mm from a center of the shower electrode.

4. The plasma etching system according to claim 1, wherein said shower electrode is provided with small holes provided at a pitch of at least 6 mm.

5. The plasma etching system according to claim 1, wherein said shower electrode is provided with small holes each having a gas spurting diameter of less than 0.8 mm.