Multiquantum barrier laser having high electron and hole reflectivity of layers

• US 5,425,041 A
• Filed: 03/17/1994
• Issued: 06/13/1995
• Est. Priority Date: 03/18/1993
• Status: Expired due to Fees

• Current Assignee: Fuji Xerox Company Limited (Fujifilm Holdings Corporation), Yasuhiro Shiraki
• Original Assignee: Fuji Xerox Company Limited (Fujifilm Holdings Corporation), Yashuhiro Shiraki
• Inventors: Ueyanagi, Kiichi, Seko, Yasuji, Shiraki, Yasuhiro
• Primary Examiner(s): Davie, James W.
• Application Number:
  US08/214,235
• Time in Patent Office: 453 Days
• Field of Search: 372/45, 372/46
• US Class Current: 372/45.01
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/20 Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
• CPC Class Codes: H01S 5/2013 MQW barrier reflection layers
• CPC Class Codes: H01S 5/34326 with a well layer based on InGa(Al)P, e.g. red laser

Abstract

It is an object of the present invention to provide a highly efficient semiconductor laser unit having excellent temperature characteristics, in which electrons or holes are suppressed from overflowing from the active layer to the cladding layers while the threshold of current density is maintained low. The present invention is to provide a semiconductor laser unit fundamentally composed of an active layer and cladding layers in which the active layer is interposed between the cladding layers the semiconductor laser unit comprising: a multiquantum barrier layer including well layers and barrier layers disposed between the active layer and the cladding layers or disposed in the cladding layers close to the active layer, wherein the well and barrier layers have a high reflectivity with respect to the electrons and holes at a position close to Γ-point in the reciprocal lattice space, and also the well and barrier layers have a high reflectivity with respect to the electrons and holes at a position close to at least one of the primary symmetrical points.

Claims

1. A semiconductor laser unit having an active layer and cladding layers, wherein said active layer is interposed between said cladding layers, comprising:

a multiquantum barrier layer including well layers and barrier layers disposed in one or both of said cladding layers, or disposed in one or both of said cladding layers close to said active layer, wherein

said well and barrier layers include at least one first pair of a well layer and a barrier layer and at least one second pair of a well layer and a barrier layer, said first pair of well and barrier layers having different characteristics from said second pair of well and barrier layers to provide relatively high reflectivities with respect to electrons and/or holes at a position close to a Γ

-point in a reciprocal lattice space and at a position close to any one of primary symmetrical points.

2. The semiconductor laser unit according to claim 1, wherein said multiquantum barrier layer is composed of laminated multiquantum barrier layers of different characteristics.

3. The semiconductor laser unit according to claim 1, wherein said multiquantum barrier layer is made of AlGaInP system material.

4. The semiconductor laser unit according to claim 3, wherein said multiquantum barrier layer is composed of the lamination of a pair of GaInP well layer and AlInP barrier layer.

5. The semiconductor laser unit according to claim 4, wherein said multiquantum barrier layer is composed of a first, a second and a third laminated layers, and wherein 10 atomic well and barrier layers are alternately laminated in said first layer, 6 atomic well and barrier layers are alternately laminated in said second layer, and 4 atomic well and barrier layers are alternately laminated in said third layer.

6. The semiconductor laser unit according to claim 4, wherein said multiquantum barrier layer is composed of a first, a second and a third laminated layers, and wherein well and barrier layers, the thickness of which is respectively 25 to 35 Å

, are alternately laminated in said first layer, well and barrier layers, the thickness of which is respectively 15 to 25 Å

, are alternately laminated in said second layer, and well and barrier layers, the thickness of which is respectively 10 to 15 Å

, are alternately laminated in said third layer.

7. A semiconductor laser unit, comprising:

an active layer;

cladding layers between which said active layer is interposed; and

a multiquantum barrier layer disposed between said active layer and one of said cladding layers, or disposed in one or both of said cladding layers close to said active layer, wherein

said multiquantum barrier layer includes at least one first pair of a well layer and a barrier layer and at least one second pair of a well layer and a barrier layer, said first pair of well and barrier layers having different characteristics from said second pair of well and barrier layers to provide relatively high reflectivities with respect to electrons and/or holes at a plurality of primary symmetrical points in a reciprocal lattice space, or at respective positions close to the plurality of primary symmetrical points.

8. The semiconductor laser unit according to claim 7, wherein said multiquantum barrier layer is composed of laminated multiquantum barrier layers of different characteristics.

9. The semiconductor laser unit according to claim 7, wherein said multiquantum barrier layer is made of AlGaInP system material.

10. The semiconductor laser unit according to claim 9, wherein said multiquantum barrier layer is composed of the lamination of a pair of GaInP well layer and AlInP barrier layer.

11. The semiconductor laser unit according to claim 10, wherein said multiquantum barrier layer is composed of a first, a second and a third laminated layers, and wherein 10 atomic well and barrier layers are alternately laminated in said first layer, 6 atomic well and barrier layers are alternately laminated in said second layer, and 4 atomic well and barrier layers are alternately laminated in said third layer.

12. The semiconductor laser unit according to claim 10, wherein said multiquantum barrier layer is composed of a first, a second and a third laminated layers, and wherein well and barrier layers, the thickness of which is respectively 25 to 35 Å

, are alternately laminated in said first layer, well and barrier layers, the thickness of which is respectively 15 to 25 Å

, are alternately laminated in said second layer, and well and barrier layers, the thickness of which is respectively 10 to 15 Å

, are alternately laminated in said third layer.

13. A semiconductor laser unit, comprising:

an active layer;

cladding layers between which said active layer is interposed; and

a multiquantum barrier disposed between said active layer and one of said cladding layers, or disposed in one or both of said cladding layers close to said active layer, wherein

said multiquantum barrier layer includes at least one first pair of a well layer and a barrier layer and at least one second pair of a well layer and a barrier layer, said first pair of well and barrier layers having different characteristics from said second pair of well and barrier layers to provide relatively high reflectivities with respect to electrons and/or holes at a Γ

-point in a reciprocal lattice space or at a position close to said Γ

-point in the reciprocal lattice space and at at least one of primary symmetrical points in the reciprocal lattice space except said Γ

-point, or at a point close to the primary symmetrical point.

14. The semiconductor laser unit according to claim 13, wherein said multiquantum barrier layer is composed of laminated multiquantum barrier layers of different characteristics.

15. The semiconductor laser unit according to claim 13, wherein said multiquantum barrier layer is made of AlGaInP system material.

16. The semiconductor laser unit according to claim 15, wherein said multiquantum barrier layer is composed of the lamination of a pair of GaInP well layer and AlInP barrier layer.

17. The semiconductor laser unit according to claim 16, wherein said multiquantum barrier layer is composed of the first, second and third laminated layers, and wherein 10 atomic well and barrier layers are alternately laminated in said first layer, 6 atomic well and barrier layers are alternately laminated in said second layer, and 4 atomic well and barrier layers are alternately laminated in said third layer.

18. The semiconductor laser unit according to claim 16, wherein said multiquantum barrier layer is composed of the first, second and third laminated layers, and wherein well and barrier layers, the thickness of which is respectively 25 to 35 Å

, are alternately laminated in said first layer, well and barrier layers, the thickness of which is respectively 15 to 25 Å

, are alternately laminated in said second layer, and well and barrier layers, the thickness of which is respectively 10 to 15 Å

, are alternately laminated in said third layer.

19. A semiconductor laser unit having an active layer and cladding layers, wherein said active layer is interposed between said cladding layers, comprising:

laminated multiquantum barrier layers of different characteristics and of the AlGaInP material system and including a lamination of a pair of a GaInP well layer and an AlInP barrier layer, said laminated multiquantum barrier layers including well layers and barrier layers disposed between said active layer and one of said cladding layers, or disposed in one or both of said cladding layers close to said active layer, wherein

said well and barrier layers have relatively high reflectivities with respect to electrons and/or holes at a position close to a Γ

-point in a reciprocal lattice space, and said well and barrier layers have a high reflectivity with respect to the electrons and holes at a position close to at least one of the primary symmetrical points.

20. The semiconductor laser unit according to claim 19, wherein one said laminated multiquantum barrier layer is composed of first, second, and third laminated layers, and wherein 10 atomic well and barrier layers are alternately laminated in said first layer, 6 atomic well and barrier layers are alternately laminated in said second layer, and 4 atomic well and barrier layers are alternately laminated in said third layer.

21. The semiconductor laser unit according to claim 19, wherein one said laminated multiquantum barrier layer is composed of first, second, and third laminated layers, and wherein well and barrier layers, the thickness of which is respectively 25 to 35 Å

, are alternately laminated in said first layer, well and barrier layers, the thickness of which is respectively 15 to 25 Å

, are alternately laminated in said second layer, and well and barrier layers, the thickness of which is respectively 10 to 15 Å

, are alternately laminated in said third layer.

22. A semiconductor laser unit, comprising:

an active layer;

cladding layers between which said active layer is interposed; and

laminated multiquantum barrier layers of different characteristics and of the AlGaInP material system and including a lamination of a pair of a GaInP well layer and an AlInP barrier layer, said laminated multiquantum barrier layers disposed between said active layer and one of said cladding layers, or disposed in one or both of said cladding layers close to said active layer, wherein

said laminated multiquantum barrier layers have relatively high reflectivities with respect to electrons and/or holes at a plurality of primary symmetrical points in a reciprocal lattice space, or at respective positions close to the plurality of primary symmetrical points.

23. The semiconductor laser unit according to claim 22, wherein one said multiquantum barrier layer is composed of first, second, and third laminated layers, and wherein 10 atomic well and barrier layers are alternately laminated in said first layer, 6 atomic well and barrier layers are alternately laminated in said second layer, and 4 atomic well and barrier layers are alternately laminated in said third layer.

24. The semiconductor laser unit according to claim 22, wherein one said multiquantum barrier layer is composed of first, second, and third laminated layers, and wherein well and barrier layers, the thickness of which is respectively 25 to 35 Å

, are alternately laminated in said first layer, well and barrier layers, the thickness of which is respectively 15 to 25 Å

, are alternately laminated in said second layer, and well and barrier layers, the thickness of which is respectively 10 to 15 Å

, are alternately laminated in said third layer.

25. A semiconductor laser unit, comprising:

an active layer;

cladding layers between which said active layer is interposed; and

laminated multiquantum barrier layers of different characteristics and of the AlGaInP material system and including a lamination of a pair of a GaInP well layer and an AlInP barrier layer, said laminated multiquantum barrier layers disposed between said active layer and one of said cladding layers, or disposed in one or both of said cladding layers close to said active layer, wherein

said laminated multiquantum barrier layers having relatively high reflectivities with respect to electrons and/or holes at a Γ

-point in a reciprocal lattice space or at a position close to said Γ

-point in the reciprocal lattice space and at at least one of primary symmetrical points in the reciprocal lattice space except said Γ

-point, or at a point close to the primary symmetrical point.

26. The semiconductor laser unit according to claim 25, wherein one said multiquantum barrier layer is composed of first, second, and third laminated layers, and wherein 10 atomic well and barrier layers are alternately laminated in said first layer, 6 atomic well and barrier layers are alternately laminated in said second layer, and 4 atomic well and barrier layers are alternately laminated in said third layer.

27. The semiconductor laser unit according to claim 25, wherein one said multiquantum barrier layer is composed of first, second, and third laminated layers, and wherein well and barrier layers, the thickness of which is respectively 25 to 35 Å

, are alternately laminated in said first layer, well and barrier layers, the thickness of which is respectively 15 to 25 Å

, are alternately laminated in said second layer, and well and barrier layers, the thickness of which is respectively 10 to 15 Å

, are alternately laminated in said third layer.