Process for coating with single source precursors
First Claim
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1. A process for coating a substrate with metal dichalcogenide by chemical vapor deposition from a single source precursor, comprising:
- a) selecting as said precursor the reaction product of the halide of a metal, M, capable of forming a metal dichalcogenide, and an organic chalcogenide or dichalcogenide or mixture thereof, wherein said organic chalcogenide has the formula R1 TR2 and said organic dichalcogenide has the formula R1 TTR2, wherein T is a chalcogen selected from the group consisting of sulfur, selenium, and tellurium and mixtures thereof, and wherein R1 and R2 may be the same or different, and are substituted or unsubstituted organic radicals selected from the group consisting of linear or branched C1-18 alkyl, linear or branched C2-18 alkenyl, C3-8 cycloalkyl, C3-8 cycloalkenyl, and C6-14 aryl radicals, or wherein R1 and R2 together form a C3-8 cyclic diradical, or wherein R1 and R2 are selected from organic germanyl radicals, silyl radicals, and stannyl radicals;
b) subliming said precursor at a pressure of less than about 760 mm Hg; and
c) contacting said sublimed precursor with a substrate maintained at a temperature sufficient to effect decomposition of said precursor to metal dichalcogenide, whereby a coating of metal dichalcogenide is formed on said substrate.
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Abstract
Reaction products of metal halides with organic chalcogenides and dichalcogenides provide single source precursors for metal dichalcogenide coatings. The single source precursors are sublimed at reduced pressure and allowed to contact a substrate maintained at an elevated temperature. The resulting dichalcogenide coatings are smooth, and adherent, and may be utilized in numerous applications, for example, as cathodes for lithium batteries.
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Citations
13 Claims
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1. A process for coating a substrate with metal dichalcogenide by chemical vapor deposition from a single source precursor, comprising:
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a) selecting as said precursor the reaction product of the halide of a metal, M, capable of forming a metal dichalcogenide, and an organic chalcogenide or dichalcogenide or mixture thereof, wherein said organic chalcogenide has the formula R1 TR2 and said organic dichalcogenide has the formula R1 TTR2, wherein T is a chalcogen selected from the group consisting of sulfur, selenium, and tellurium and mixtures thereof, and wherein R1 and R2 may be the same or different, and are substituted or unsubstituted organic radicals selected from the group consisting of linear or branched C1-18 alkyl, linear or branched C2-18 alkenyl, C3-8 cycloalkyl, C3-8 cycloalkenyl, and C6-14 aryl radicals, or wherein R1 and R2 together form a C3-8 cyclic diradical, or wherein R1 and R2 are selected from organic germanyl radicals, silyl radicals, and stannyl radicals; b) subliming said precursor at a pressure of less than about 760 mm Hg; and c) contacting said sublimed precursor with a substrate maintained at a temperature sufficient to effect decomposition of said precursor to metal dichalcogenide, whereby a coating of metal dichalcogenide is formed on said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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10. The process of claim 9 wherein M is selected from the group consisting of titanium, zirconium, and hafnium and X is chlorine.
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11. The process of claim 1 wherein said coating comprises a metal disulfide, and wherein said single source precursor comprises the reaction product of a titanium (IV) halide with an organic chalcogen compound selected from the group consisting of dimethyldisulfide, tetrahydrothiophene, pentamethylene sulfide, and dimethylsulfide.
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12. The process of claim 1 wherein said coating comprises a metal diselenide and wherein said single source precursor comprises the reaction product of a titanium (IV) halide and dimethylselenide.
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13. The process of claim 1 wherein said coating comprises a metal ditelluride and wherein said single source precursor comprises the reaction product of a titanium (IV) halide and diphenylditelluride.
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Specification