Adaptive class AB amplifier for TDMA wireless communications systems

• US 5,426,641 A
• Filed: 01/28/1994
• Issued: 06/20/1995
• Est. Priority Date: 01/28/1994
• Status: Expired due to Term

• Current Assignee: Intellectual Ventures II LLC (Intellectual Ventures LLC)
• Original Assignee: Bell Communications Research, Inc. (Telefonaktiebolaget LM Ericsson)
• Inventors: Afrashteh, Alireza, Sollenberger, Nelson R.
• Primary Examiner(s): Safourek, Benedict V.
• Application Number:
  US08/187,973
• Time in Patent Office: 508 Days
• Field of Search: 379/79, 379/95.3, 455/69, 455/91, 455/115, 455/116, 455/117, 455/127, 375/59, 375/68, 375/71, 330/129, 330/130, 330/277, 330/279, 330/290
• US Class Current: 370/347
• CPC Class Codes: H03F 1/0261 with control of the polarisation voltage or current, e.g. gliding Class A
• CPC Class Codes: H03F 1/30 Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in differential amplifiers H03F3/45479
• CPC Class Codes: H03G 3/007 Control dependent on the supply voltage
• CPC Class Codes: H03G 3/3047 for intermittent signals, e.g. burst signals

Abstract

In a TDM/TDMA portable radio communications system, the modulated RF signal transmitted by a portable handset unit is amplified for uplink transmission to a port by an adaptive class AB power amplifier. A class AB amplifier provides the necessary amplification for the low power levels to be output by the portable units, but must be biased just slightly "on" with no signal input for required maximum efficiency and linearity. In order to maintain the amplifier at a proper bias level over changing temperature conditions and free from the effects of device aging and device-to-device variations, the drain current of the amplifier is monitored each frame outside the burst interval in which the portable is transmitting and thus when no signal is present at its input. The drain current is then controlled by adjusting the gate voltage to compensate for any variations.

Claims

1. An adaptive class AB amplifier for amplifying an input signal that has periods of activity and periods of inactivity comprising:

class AB amplifier means comprising at least one FET for amplifying the input signal;

measuring means for measuring the drain current of said at least one FET of said class AB amplifier means during a period of inactivity of the input signal;

comparing means for comparing the drain current measured during a period of input signal inactivity with a reference quiescent drain current value that keeps the amplifier slightly "on"; and

adjusting means for adjusting the drain current of said at least one FET of said class AB amplifier means during a period of input signal inactivity so that it moves toward the reference quiescent drain current value.

2. An adaptive class AB amplifier in accordance with claim 1 wherein said measuring means measures the drain current of said at least one FET during each period of inactivity of the input signal, said comparing means compares the measured drain current in each period of input signal inactivity with a reference quiescent drain current value, and said adjusting means adjusts the drain current toward the reference quiescent drain current during each period of input signal inactivity.

3. An adaptive class AB amplifier in accordance with claim 2 wherein said adjusting means comprises means for varying the gate bias voltage of said amplifying means.

4. An adaptive class AB amplifier in accordance with claim 1 wherein the input signal is an RF (radio frequency) signal.

5. In a mobile portable handset unit in a TDM/TDMA digital telephony system which transmits an RF (radio frequency) burst signal at an uplink frequency during an assigned time-slot within a frame to a fixed port within the system and does not transmit during the period within the frame outside the assigned time-slot, adaptive apparatus for amplifying a modulated RF burst input signal to a power level for transmission, the adaptive apparatus comprising:

class AB amplifier means comprising at least one FET for amplifying the modulated RF burst input signal;

measuring means for measuring the drain current of said at least one FET of said class AB amplifier means during the period within a frame that is outside the assigned time-slot of the burst;

comparing means for comparing the drain current measured during the period within a frame outside the assigned time-slot of the burst with a reference quiescent drain current value that keeps the amplifier slightly "on"; and

adjusting means for adjusting the drain current of said at least one FET of said class AB amplifier means during the period within a frame outside the assigned time-slot of the burst so that it moves toward the reference quiescent drain current value.

6. Adaptive apparatus in accordance with claim 5 wherein said measuring means measures the drain current of said at least one FET during the period within each frame that is outside the assigned time-slot of the burst, said comparing means compares with a reference quiescent drain current the measured drain current in each period within each frame that is outside the assigned time-slot of the burst, and said adjusting means adjusts the drain current toward the reference quiescent drain current during each period within each frame that is outside the assigned time-slot of the burst.

7. Adaptive apparatus AB in accordance with claim 6 wherein said adjusting means comprises means for varying the gate bias voltage of said amplifying means.

8. In a mobile portable handset unit in a TDM/TDMA digital telephony system which transmits an RF (radio frequency) burst signal at an uplink frequency during an assigned time-slot within a frame to a fixed port within the system and does not transmit during the period within the frame outside the assigned time-slot, a method for adjusting the bias of a class AB amplifier in the handset unit which amplifies a modulated RF burst input signal to a power level for transmission and which comprises at least one FET, the method comprising the steps of:

measuring the drain current of the at least one FET of the class AB amplifier during the period within a frame that is outside the assigned time-slot of the burst;

comparing the drain current measured during the period within a frame outside the assigned time-slot of the burst with a reference quiescent drain current value that keeps the amplifier slightly "on"; and

adjusting the drain current of the at least one FET of the class AB amplifier during the period within a frame outside the assigned time-slot of the burst so that it moves toward the reference quiescent drain current value.

9. The method of claim 8 wherein the drain current of the at least one FET is measured during the period within each frame that is outside the assigned time-slot of the burst, the reference quiescent drain current is compared with the measured drain current in each period within each frame that is outside the assigned time-slot of the burst, and the drain current is adjusted toward the reference quiescent drain current during each period within each frame that is outside the assigned time-slot of the burst.

10. The method of claim 9 wherein the step of adjusting the drain current comprises varying the gate bias voltage of the class AB amplifier.