Constant-voltage diode for over-voltage protection

• US 5,430,311 A
• Filed: 09/21/1992
• Issued: 07/04/1995
• Est. Priority Date: 09/20/1991
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Murakami, Susumu, Satou, Yukimasa, Narita, Hiroshi
• Primary Examiner(s): Mintel, William
• Assistant Examiner(s): TRAN, MINH LOAN
• Application Number:
  US07/947,518
• Time in Patent Office: 1,016 Days
• Field of Search: 257/603, 257/604, 257/605, 257/606, 257/551, 257/119, 257/121, 257/129, 257/132, 257/138, 257/146, 257/147, 257/149, 257/168
• US Class Current: 257/146
• CPC Class Codes: H01L 29/66106 Zener diodes
• CPC Class Codes: H01L 29/66371 structurally associated with another device, e.g. built-in diode making integrated circuits H01L21/82
• CPC Class Codes: H01L 29/861 Diodes

Abstract

A constant-voltage diode has a first semiconductor region of a first conductivity type, an adjoining semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type adjoining the second semiconductor region, and a fourth semiconductor region of the first conductivity type partially surrounded by the second semiconductor region. At low reverse biases between a cathode electrode and an anode electrode, the behavior of the device is determined by the pn junction between the first and second semiconductor regions. As the reverse biasing increases, the depletion layers of that junction will reach the fourth semiconductor region, but the reverse bias at this time is insufficient to break down that junction. A further increase of reverse bias causes breakdown of the pn junction between the third and fourth semiconductor regions. This effect is achieved by suitable impurity concentrations in the semiconductor regions. A plurality of fourth semiconductor regions may be provided, and a bi-directional structure can be obtained by providing a polarity reversed structure with the first semiconductor region in common.

Claims

1. A constant-voltage diode, comprising:

a first semiconductor region of first conductivity type;

a second semiconductor region of a second conductivity type, said second conductivity type being different from said first conductivity type, said first and second semiconductor regions contacting each other such as to form a first pn junction therebetween;

a third semiconductor region of said second conductivity type contacting said second semiconductor region;

a fourth semiconductor region of said first conductivity type contacting and being at least partially surrounded by said second semiconductor region; and

first and second electrodes in electrical contact with said first and third semiconductor regions, respectively;

wherein said third semiconductor region is interposed between said fourth semiconductor region and said second electrode to embed said fourth semiconductor region and separate it from the second electrode;

wherein the impurity concentration of at least one of said first and second semiconductor regions is less than the impurity concentration of at least one of said third and fourth semiconductor regions.

2. A diode according to claim 1, wherein the impurity concentration of said second semiconductor region is less than the impurity concentration of both said third and fourth semiconductor regions.

3. A diode according to claim 1, wherein the impurity concentration of said first semiconductor region is less than the impurity concentration of both said third and fourth semiconductor regions.

4. A diode according to claim 1, wherein said fourth semiconductor region contacts said third semiconductor region such as to form a second pn junction therebetween.

5. A diode according to claim 1, wherein said fourth semiconductor region is wholly surrounded by said second semiconductor region.

6. A diode according to claim 1, having an additional semiconductor region of said first conductivity type between said first semiconductor region and said first electrode.

7. A constant-voltage diode, comprising:

a first semiconductor region of a first conductivity type;

a second semiconductor region of a second conductivity type, said second conductivity type being different from said first conductivity type, said first and second semiconductor regions contacting each other such as to form a first pn junction therebetween;

a third semiconductor region of said second conductivity type contacting said second semiconductor region;

a plurality of fourth semiconductor regions of said first conductivity type, each of said plurality of fourth semiconductor regions being at least partially surrounded by said second semiconductor region;

first and second electrodes in electrical contact with said first and third semiconductor regions, respectively;

wherein said third semiconductor region is interposed between said fourth semiconductor regions and said second electrode to embed said fourth semiconductor regions and separate them from the second electrode;

wherein the impurity concentration of at least one of said first and second semiconductor regions is less than the impurity concentration of at least one of said third and said plurality of fourth semiconductor regions.

8. A diode according to claim 7, having an additional semiconductor region of said first conductivity type between said first semiconductor region and said first electrode.

9. A diode according to claim 7, having a plurality of further semiconductor regions of said first conductivity type interconnecting said plurality of fourth semiconductor regions, said plurality of further semiconductor regions having a lower impurity concentration than said plurality of fourth semiconductor regions.

10. A diode according to claim 9, wherein said plurality of further semiconductor regions contact said third semiconductor region.

11. A diode according to claim 9, wherein said plurality of further semiconductor regions are separated by parts of said second semiconductor region from said third semiconductor region.

12. A diode comprising:

a first semiconductor region of a first conductivity type;

a second semiconductor region of a second conductivity type, said second conductivity type being different from said first conductivity type, said first and second semiconductor regions contacting each other such as to form a first pn junction therebetween;

a third semiconductor region of said second conductivity type contacting said second semiconductor region;

a plurality of fourth semiconductor regions of said first conductivity type, each of said plurality of fourth semiconductor regions being at least partially surrounded by said second semiconductor region;

first and second electrodes in electrical contact with said first and third semiconductor regions, respectively;

wherein the impurity concentration of at least one of said first and second semiconductor regions is less than the impurity concentration of at least one of said third and said plurality of fourth semiconductor regions; and

a plurality of further semiconductor regions of said first conductivity type interconnecting said plurality of fourth semiconductor regions, said plurality of further semiconductor regions having a lower impurity concentration than said plurality of fourth semiconductor regions.

13. A diode according to claim 12, wherein said plurality of further semiconductor regions contact said third semiconductor region.

14. A diode according to claim 12, wherein said plurality of further semiconductor regions are separated by parts of said second semiconductor region from said third semiconductor region.

15. A constant-voltage diode, comprising:

a first semiconductor region of a first conductivity type;

a second semiconductor region of a second conductivity type, said second conductivity type being different from said first conductivity type, said first and second semiconductor regions contacting each other such as to form a first pn junction therebetween;

a third semiconductor region of said second conductivity type contacting said second semiconductor region;

a fourth semiconductor region of said first conductivity type contacting and being at least partially surrounded by said second semiconductor region; and

a fifth semiconductor region of said second conductivity type contacting said first semiconductor region and being spaced from said second semiconductor region;

a sixth semiconductor region of said second conductivity type contacting said fifth semiconductor region;

a seventh semiconductor region of said first conductivity type contacting and being at least partially surrounded by said fifth semiconductor region; and

first and second electrodes in electrical contact with said sixth and third semiconductor regions, respectively;

wherein said third semiconductor region is interposed between said fourth semiconductor region and said second electrode to embed said fourth semiconductor region and separate it from the second electrode;

wherein the impurity concentration of at least one of said first and second semiconductor regions is less than the impurity concentration of at least one of said third and fourth semiconductor regions, and the impurity concentration of at least one of said first and fifth semiconductor regions is less than the impurity concentration of at least one of said sixth and seventh semiconductor regions.

16. A constant-voltage-diode, comprising:

a first semiconductor region of first conductivity type;

a second semiconductor region of a second conductivity type, said second conductivity type being different from said first conductivity type, said first and second semiconductor regions contacting each other such as to form a first pn junction therebetween;

a third semiconductor region of said second conductivity type contacting said second semiconductor region;

a plurality of fourth semiconductor regions of said first conductivity type contacting and being at least partially surrounded by said second semiconductor region;

a fifth semiconductor region of said second conductivity type contacting said first semiconductor region and being spaced from said second semiconductor region;

a sixth semiconductor region of said second conductivity type contacting said fifth semiconductor region;

a plurality of seventh semiconductor regions of said first conductivity type contacting and being at least partially surrounded by said fifth semiconductor region; and

first and second electrodes in electrical contact with said sixth and third semiconductor regions, respectively;

wherein said third semiconductor region is interposed between said fourth semiconductor regions and said second electrode to embed said fourth semiconductor regions and separate them from the second electrode;

wherein the impurity concentration of at least one of said first and second semiconductor regions is less than the impurity concentration of at least one of said third and said plurality of fourth semiconductor regions, and the impurity concentration of at least one of said first and fifth semiconductor regions is less than the impurity concentration of at least one of said sixth and said plurality of seventh semiconductor regions.

17. A constant-voltage-diode according to claim 16, further comprising a plurality of eighth semiconductor regions of said first conductivity type interconnecting said plurality of fourth semiconductor regions, said plurality of eighth semiconductor regions having a lower impurity concentration than said plurality of fourth semiconductor regions.

18. A constant-voltage-diode according to claim 17, further comprising a plurality of ninth semiconductor regions of said first conductivity type interconnecting said plurality of seventh semiconductor regions, said plurality of ninth semiconductor regions having a lower impurity concentration than said plurality of seventh semiconductor regions.

19. A constant-voltage-diode according to claim 17, wherein said plurality of eighth semiconductor regions contact said third semiconductor region such that said third semiconductor region is interposed between the eighth semiconductor regions and said second electrode to embed the eighth semiconductor regions and separate them from said second electrode.

20. A constant-voltage-diode according to claim 18, wherein said plurality of ninth semiconductor regions contacts said sixth semiconductor region such that said sixth semiconductor region is interposed between the ninth semiconductor regions and said first electrode to embed the ninth semiconductor regions and separate them from said first electrode.

21. A constant-voltage-diode according to claim 18, wherein said plurality of eighth semiconductor regions contact said third semiconductor region such that said third semiconductor region is interposed between the eighth semiconductor regions and said second electrode to embed the eighth semiconductor regions and separate them from said second electrode, and further wherein said plurality of ninth semiconductor regions contacts said sixth semiconductor region such that said sixth semiconductor region is interposed between the ninth semiconductor regions and said first electrode to embed the ninth semiconductor regions and separate them from said first electrode.

22. A constant-voltage-diode, comprising:

a first semiconductor region of a first conductivity type;

a second semiconductor region of a second conductivity type, said second conductivity type being different from said first conductivity type, said first and second semiconductor regions contacting each other such as to form a first pn junction therebetween;

a third semiconductor region of said second conductivity type contacting said second semiconductor region;

a fourth semiconductor region of said first conductivity type contacting and being at least partially surrounded by said second semiconductor region; and

first and second electrodes in electrical contact with said first and third semiconductor regions, respectively;

wherein said third semiconductor region is interposed between said fourth semiconductor region and said second electrode to embed said fourth semiconductor region and separate it from the second electrode; and

wherein said fourth semiconductor region contacts said third semiconductor region such as to form a second pn junction therebetween; and

wherein the first, second, third and fourth semiconductor regions are such that the second pn junction undergoes breakdown when the reverse biasing of the first pn junction exceeds a predetermined amount, said predetermined amount being insufficient to cause breakdown of said first pn junction.

23. A diode according to claim 22, having an additional semiconductor region of said first conductivity type between said first semiconductor region and said first electrode.

24. A constant-voltage-diode, comprising:

a first semiconductor region of a first conductivity type;

a second semiconductor region of a second conductivity type, said second conductivity type being different from said first conductivity type, said first and second semiconductor regions contacting each other such as to form a first pn junction therebetween;

a third semiconductor region of said second conductivity type contacting said second semiconductor region;

a plurality of fourth semiconductor regions of said first conductivity type, each of said plurality of fourth semiconductor regions being at least partially surrounded by said second semiconductor region; and

first and second electrodes in electrical contact with said first and third semiconductor regions, respectively;

wherein said third semiconductor region is interposed between said fourth semiconductor regions and said second electrode to embed said fourth semiconductor regions and separate them from the second electrode; and

wherein said plurality of fourth semiconductor regions contact said third semiconductor region so as to form a plurality of second pn junctions therebetween; and

wherein the first, second, third and plurality of fourth semiconductor regions are such that the plurality of second pn junctions undergo breakdown when the reverse biasing of said first pn junction exceeds a predetermined amount, said predetermined amount being insufficient to cause breakdown of said first pn junction.

25. A bi-directional constant-voltage diode, comprising:

a first semiconductor region of a first conductivity type;

a second semiconductor region of a second conductivity type, said second conductivity type being different from said first conductivity type, said first and second semiconductor regions contacting each other so as to form a first pn junction therebetween;

a third semiconductor region of said second conductivity type contacting said second semiconductor region;

a plurality of fourth semiconductor regions of said first conductivity type contacting and being at least partially surrounded by said second semiconductor regions;

wherein said fourth semiconductor regions contact said third semiconductor region such as to form a second pn junction therebetween;

a fifth semiconductor region of second conductivity type contacting said first semiconductor region and being spaced from said second semiconductor region;

wherein said fifth and first semiconductor regions contact each other such as to form a third pn junction therebetween;

a sixth semiconductor region of said second conductivity type contacting said fifth semiconductor region;

a plurality of seventh semiconductor regions of said first conductivity type contacting and being at least partially surrounded by said fifth semiconductor region;

wherein said seventh semiconductor regions contact said sixth semiconductor region such as to form a fourth pn junction therebetween; and

first and second electrodes in electrical contact with said sixth and third semiconductor regions, respectively;

wherein said third semiconductor region is interposed between said fourth semiconductor regions and said second electrode to embed said fourth semiconductor regions and separate them from the second electrode;

wherein the impurity concentration of at least one of said first and second semiconductor regions is less than the impurity concentration of at least one of said third and said plurality of fourth semiconductor regions, and the impurity concentration of at least one of said first and fifth semiconductor regions is less than the impurity concentration of at least one of said sixth and said plurality of seventh semiconductor regions;

wherein the second pn junction undergoes breakdown when the one reverse biasing of the first pn junction exceeds a predetermined amount, said predetermined amount being insufficient to cause breakdown of said first pn junction; and

the fourth pn junction undergoes breakdown when the another reverse biasing of the third pn junction exceeds a predetermined amount, said amount being insufficient to cause breakdown of said third pn junction.