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Integrated circuit lamination process

  • US 5,432,999 A
  • Filed: 03/21/1994
  • Issued: 07/18/1995
  • Est. Priority Date: 08/20/1992
  • Status: Expired due to Fees
First Claim
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1. A method for forming a single thin layer integrated circuit device comprising the steps of:

  • (1) forming a planar substrate of dissolvable material, the substrate having opposed top and bottom surfaces and side edges;

    (2) disposing a protective material layer over the dissolvable material layer, with the protective material layer extending over at least the top surface and the side edges of the dissolvable material layer;

    (3) disposing a semiconductive material over the protective material layer on the top surface of the substrate;

    (4) forming an integrated circuit in the semiconductive material layer; and

    (5) separating the substrate from the protective material layer to form a single thin layer integrated circuit device.

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