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Method of manufacturing semiconductor device with copper core bumps

  • US 5,433,822 A
  • Filed: 12/22/1992
  • Issued: 07/18/1995
  • Est. Priority Date: 04/26/1991
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a semiconductor device by forming copper core bumps on a circuit pattern on a circuit board by way of plating using a resist pattern, characterized by forming a solvent-reactive first dry film and a water-soluble second dry film as successive layers as said resist pattern, and removing said second dry film after the copper core bumps are formed.

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