Method of using corrosion prohibiters in aluminum alloy films

• US 5,434,104 A
• Filed: 03/02/1994
• Issued: 07/18/1995
• Est. Priority Date: 03/02/1994
• Status: Expired due to Fees

• Current Assignee: VLSI Technology, Inc. (Koninklijke Philips N.V.)
• Original Assignee: VLSI Technology, Inc. (Koninklijke Philips N.V.)
• Inventors: Vines, Landon B., Cain, John L., Koenigseder, Sigmund, Lee, Chang-Ou, Fujishiro, Felix
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): DUTTON, BRIAN KEITH
• Application Number:
  US08/204,829
• Time in Patent Office: 503 Days
• Field of Search: 437/197, 437/198
• US Class Current: 438/652
• CPC Class Codes: H01L 21/28512 on semiconductor bodies comprising elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 21/32051 Deposition of metallic or metal-silicide layers

Abstract

A method of metalization of semiconductor devices wherein predominantly aluminum metal films incorporate a minor amount of magnesium in admixture with the aluminum, or in layered juxtaposition with the aluminum layer, to provide resistance to corrosion, particularly acidic corrosion.

Claims

1. A method of forming a metal film that is resistant to corrosion in an acidic environment on the surface of a semiconductor device comprising the steps of (a) depositing an alloy comprising aluminum and magnesium onto said surface wherein said magnesium constitutes about 0.1 to about 5 weight percent of said metal film based on the total weight of said metal film and (2) thereafter covering said metal film with a second film comprising essentially of said magnesium.

2. A method according to claim 1 wherein the metal film has a thickness of about 3,000-12,000 Å

.

3. A method according to claim 1 wherein said metal film also contains a metal selected from the group consisting of copper, silicon, titanium, tungsten and mixtures thereof.

4. A method according to claim 3 wherein said metal film is deposited on said semiconductor device by sputtering or evaporation.

5. A method according to claim 3 wherein the metal film has a thickness of about 3,000-12,000 Å

.

6. A method according to claim 1 wherein said metal film is an alloy of copper containing from about 0.5 to about 5 weight percent copper based on the weight of said film.

7. A method according to claim 6 wherein said metal film is deposited on said semiconductor device by sputtering or evaporation.

8. A method according to claim 6 wherein the metal film has a thickness of about 3,000-12,000 Å

.

9. A method according to claim 1 wherein said metal film is deposited on said semiconductor device by sputtering or evaporation.

10. A method according to claim 9 wherein the metal film has a thickness of about 3,000-12,000 Å

.