Optical interconnection device

• US 5,434,426 A
• Filed: 09/10/1993
• Issued: 07/18/1995
• Est. Priority Date: 09/10/1992
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kushibe, Mitsuhiro, Takaoka, Keiji, Furuyama, Hideto, Hamasaki, Hiroshi, Kaminishi, Katsuji, Kobayashi, Tamon
• Primary Examiner(s): Nelms, David C.
• Application Number:
  US08/118,811
• Time in Patent Office: 676 Days
• Field of Search: 250/208.1, 250/208.2, 250/208.4, 250/216, 250/551, 250/214 LS, 359/152, 359/154, 359/164, 359/165, 359/166, 359/167, 257/618, 257/623, 257/624, 257/435, 257/437, 257/466
• US Class Current: 250/551
• CPC Class Codes: G02B 6/43 Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
• CPC Class Codes: H01S 5/005 Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping H01S5/026, H01S5/18388 take precedence
• CPC Class Codes: H01S 5/0264 for monitoring the laser-output
• CPC Class Codes: H01S 5/0267 Integrated focusing lens H01S5/18388 takes precedence
• CPC Class Codes: H01S 5/1032 Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
• CPC Class Codes: H01S 5/1071 Ring-lasers
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18344 characterized by the mesa, e.g. dimensions or shape of the mesa
• CPC Class Codes: H01S 5/18358 containing spacer layers to adjust the phase of the light wave in the cavity
• CPC Class Codes: H01S 5/2027 Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
• CPC Class Codes: H01S 5/5072 Gain clamping, i.e. stabilisation by saturation using a further mode or frequency

Abstract

Disclosed herein is an optical interconnection device having a light source, a plurality of optical interconnecting elements, and a light-receiving element. The optical interconnecting elements are located on an output side of the light source. Each of the elements has first and second major surfaces and comprises an integral unit made of an optical semiconductor element and a grating lens having concentric annular grooves and concentric annular projections, and two electrodes formed on the first and second major surfaces, respectively. The optical semiconductor element and grating lens of each optical interconnecting element are formed on the first major surface, for emitting or receiving light. The light-receiving element is located on an output side of the optical interconnecting elements. The optical interconnecting elements are arranged at substantially regular intervals, each positioned such that the semiconductor element and the grating lens face to the same direction. The grating lens of each of the optical interconnecting elements has optical characteristic which compensates for light-transmitting characteristic corresponding to the interval between the optical connecting element and the next optical interconnecting element.

Claims

1. An optical interconnection device comprising:

a light source;

a plurality of optical interconnecting elements which are located on an output side of said light source and each of which has first and second major surfaces and comprises an integral unit made of an optical semiconductor element and a grating lens having concentric annular grooves and concentric annular projections, and two electrodes formed on the first and second major surfaces, respectively, said optical semiconductor element and said grating lens formed on the first major surface for emitting or receiving light; and

a light-receiving element located on an output side of said optical interconnecting elements,

wherein said optical interconnecting elements are arranged at substantially regular intervals, each positioned such that said semiconductor element and said grating lens face to the same direction, and the grating lens of each of said optical interconnecting elements has optical characteristic which compensates for light-transmitting characteristic corresponding to the interval between the optical interconnecting element and the next optical interconnecting element.

2. The optical interconnection device according to claim 1, wherein a secondary grating is formed on each of the concentric annular projections of said grating lens.

3. The optical interconnection device according to claim 1, wherein said grating lens of each of said optical interconnecting elements has a focal distance which is half the interval between the optical interconnecting element and the next optical interconnecting element.

4. The optical interconnection device according to claim 1, wherein said grating lens of each of said optical interconnecting elements has a focal distance which is a quarter of the interval between the optical interconnecting element and the next optical interconnecting element.

5. The optical interconnection device according to claim 1, wherein each of said optical interconnecting elements comprises a semiconductor substrate of a first conductivity type having first and second major surfaces, a groove formed in the first major surface, separating the first major surface into an element-forming region and a lens-forming region, a light-receiving layer formed on said element-forming region, a first semiconductor layer of a second conductivity type formed on said light-receiving layer;

a first electrode formed on said first semiconductor layer and having an opening, a light-amplifying layer formed on said lens-forming region, a second semiconductor layer of the second conductivity type formed on said light-amplifying layer and having concentric annular grooves and concentric annular projections, a second electrode formed on said second semiconductor layer, except said concentric annular grooves and said concentric annular projections; and

a third electrode formed on said second major surface of said semiconductor substrate.

6. The optical interconnection device according to claim 1, wherein the optical semiconductor element is a surface emitting semiconductor laser comprising a second order grating layer of a first conductivity type, an active layer formed on said second order grating layer, a reflector layer of a second conductivity type having cylindrical structure formed on said active layer, and a contact layer of the second conductivity type formed on said reflector layer.

7. The optical interconnection device according to claim 1, wherein said electrode formed on the second major surface of each of optical interconnecting elements is formed in a specific pattern which is capable of diffracting light and which defines said grating lens.

8. The optical interconnection device according to claim 1, wherein the optical semiconductor element of each of said optical interconnecting elements has a light-receiving surface having a reflectance and a light-emitting surface having a reflectance lower than that of the light-receiving surface, is designed to select a light beam incident on the light-receiving surface and having a predetermined wavelength, amplify the light beam and emit the light beam from the light-emitting surface, and has an optical resonator interposed between said light-receiving surface and said light-emitting surface and having an optical thickness which is an integral multiple of half the wavelength of said light beam.

9. The optical interconnection device according to claim 1, wherein the optical semiconductor element of each of said optical interconnecting elements has a light-receiving surface having a reflectance and a light-emitting surface having a reflectance lower than that of the light-receiving surface, is designed to amplify light incident on the light-receiving surface, amplify the light and emit the light from the light-emitting surface, and has an optical resonator interposed between said light-receiving surface and said light-emitting surface and having an effective length which continuously changes in a plane.

10. The optical interconnection device according to claim 1, wherein the optical semiconductor element of each of said optical interconnecting elements has an optical film consisting of portions having different reflectances.

11. An optical interconnection device comprising:

a light source;

an odd number of optical interconnecting elements which are located on an output side of said light source and each of which has first and second major surfaces and comprises an integral unit made of an optical semiconductor element and a grating lens having concentric annular grooves and concentric annular projections, and two electrodes formed on the first and second major surfaces, respectively, said optical semiconductor element and said grating lens formed on the first major surface for emitting or receiving light; and

a light-receiving element located on an output side of said optical interconnecting elements,

wherein said optical interconnecting elements are arranged at substantially regular intervals, each positioned such that said semiconductor element and said grating lens face to the same direction;

the grating lens of each of said optical interconnecting elements has an optical characteristic which compensates for a light-transmitting characteristic corresponding to the interval between the optical interconnecting element and the next optical interconnecting element;

light emitted from said light source is applied to said light-receiving element through the grating lenses of said optical interconnecting elements; and

light emitted from the optical semiconductor element of the first of said optical interconnecting elements is applied to said light-receiving element through the grating lenses of the remaining optical interconnecting elements.

12. The optical interconnection device according to claim 11, wherein the light source and the optical semiconductor element of the first optical interconnecting element are surface semiconductor laser comprising a first reflector layer of a first conductivity type, an active layer formed on said first reflector layer, a second reflector layer of a second conductivity type formed on said active layer, and a contact layer of the second conductivity type formed on said second reflector layer.

13. An optical semiconductor element comprising:

a semiconductor substrate;

a light-absorbing layer formed on said semiconductor substrate;

an active region formed in the surface of said light-absorbing layer, for receiving and emitting light;

a non-active region formed in the surface of said light-absorbing layer and surrounding said active region, for receiving and emitting light; and

a protective layer covering said non-active region,

wherein said active region and said non-active region constitute a mesa structure, and a light-shielding mask blocks light applied toward said nonactive region.

14. The element according to claim 13, wherein said non-active region has a top and a side, and said light-shielding mask covers the top of said non-active region and at least one part of the side of said non-active region.

15. The element according to claim 13, wherein said non-active region has a top and a side, said light-shielding mask covers the top of said non-active region and at least one part of the side of said non-active region, and an electrode connected to said active region.

16. The element according to claim 13, wherein said active region and said non-active region constitute a plurality of mesa structures which are arranged, forming a two-dimensional array.

17. An optical interconnection device comprising:

a light source;

a plurality of optical interconnecting elements which are located on an output side of said light source and each of which has first and second major surfaces and comprises an integral unit made of an optical semiconductor element and a grating lens having concentric annular grooves and concentric annular projections, and two electrodes formed on the first and second major surfaces, respectively, said optical semiconductor element and said grating lens formed on the first major surface for emitting or receiving light;

a light-receiving element located on an output side of said optical interconnecting elements, for converting an optical signal into an electric signal;

a diode connected to an output of said light-receiving element and forward-biased with respect to the electric signal supplied from said light-receiving element; and

an output terminal connected between said diode and said light-receiving element,

wherein said optical interconnecting elements are arranged at substantially regular intervals, each positioned such that said semiconductor element and said grating lens face to the same direction, and the grating lens of each of said optical interconnecting elements has optical characteristic which compensates for light-transmitting characteristic corresponding to the interval between the optical interconnecting element and the next optical interconnecting element.

18. The optical interconnection device according to claim 17, further comprising a resistor element to which said diode is connected in parallel.

19. The optical interconnection device according to claim 17, further comprising a comparator for generating an electric signal corresponding to a difference between a voltage at said output terminal and a reference voltage.

20. The optical interconnection device according to claim 19, wherein said diode is a Schottky barrier diode.