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Trench gate lateral MOSFET

  • US 5,434,435 A
  • Filed: 05/04/1994
  • Issued: 07/18/1995
  • Est. Priority Date: 05/04/1994
  • Status: Expired due to Term
First Claim
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1. A trench gate lateral MOSFET, comprising:

  • a substrate layer;

    an intermediate layer located on the substrate layer;

    an N-drift layer located on the intermediate layer;

    a P-base layer located on a first portion of the N-drift layer;

    an N+ layer located on at least part of the P-base layer and on a second portion of the N-drift layer;

    a trench located in the N-drift layer, the P-base layer and the N+ layer;

    an oxide region formed within the trench;

    a gate region located within the oxide region;

    a source contact located on the P-base layer and the N+ layer on a first side of the trench and extending to a first edge of the trench; and

    a drain contact located on the N+ layer on a second side of the trench and extending to a second edge of the trench, the source and drain contacts being located on a side of the N+ layer opposite from said substrate layer and the P-base layer being located only on the first side of the trench.

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