Temperature measurement using ion implanted wafers
First Claim
1. A method for measuring the value of an unknown temperature, comprising the steps of:
- providing an initial wafer;
first ion implanting the initial wafer with a first dose of an ionic species;
annealing the ion implanted initial wafer at an annealing temperature;
second ion implanting the annealed wafer with a second dose of the same ionic species as used in the first dose to form a test wafer, the second dose being lower than the first dose;
heating the wafer to the unknown temperature;
discontinuing the step of heating;
measuring the surface electrical resistivity of the test wafer after the step of discontinuing; and
determining the value of the unknown temperature from the measured surface electrical resistivity.
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Accused Products
Abstract
The value of an unknown test temperature is measured by heating a test wafer (58) to the unknown temperature, measuring the surface electrical resistivity of the test wafer (58), and determining the value of the unknown temperature from the measured surface electrical resistivity. The test wafer (58) is prepared by providing an initial wafer (50), first ion implanting the initial wafer (50) with a first dose of an ionic species, and annealing the ion implanted initial wafer (50) at an annealing temperature. The preparation is completed by second ion implanting the annealed wafer with a second dose of the same ionic species as used in the first dose to form a test wafer, the second dose being lower than the first dose.
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Citations
16 Claims
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1. A method for measuring the value of an unknown temperature, comprising the steps of:
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providing an initial wafer; first ion implanting the initial wafer with a first dose of an ionic species; annealing the ion implanted initial wafer at an annealing temperature; second ion implanting the annealed wafer with a second dose of the same ionic species as used in the first dose to form a test wafer, the second dose being lower than the first dose; heating the wafer to the unknown temperature; discontinuing the step of heating; measuring the surface electrical resistivity of the test wafer after the step of discontinuing; and determining the value of the unknown temperature from the measured surface electrical resistivity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for measuring the value of an unknown test temperature, comprising the steps of:
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providing a doped test wafer having a short-range, unstable defect structure therein; heating the test wafer to the unknown temperature; discontinuing the step of heating; measuring the surface electrical resistivity of the test wafer after the step of discontinuing; and determining the value of the unknown temperature from the measured surface electrical resistivity. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification