Process for fabricating a semiconductor memory device including a capacitor having a cylindrical storage node electrode

• US 5,436,187 A
• Filed: 02/22/1994
• Issued: 07/25/1995
• Est. Priority Date: 02/22/1994
• Status: Expired due to Fees

• Current Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Original Assignee: NEC Corporation
• Inventors: Tanigawa, Takaho
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): TSAI, H JEY
• Application Number:
  US08/199,647
• Time in Patent Office: 518 Days
• Field of Search: 437/52, 437/919, 437/60, 437/47
• US Class Current: 438/396
• CPC Class Codes: H10B 12/033 the capacitor extending over the transistor
• CPC Class Codes: H10B 12/318 the storage electrode having multiple segments

Abstract

A process for fabricating a semiconductor device having a capacitor is disclosed. The process comprises the steps of: providing a semiconductor substrate having a transistor formed therein; forming an interlayer insulating film over a surface of the semiconductor substrate; forming in sequence a first polysilicon film and a first insulating film on a surface of the interlayer insulating film; selectively removing the first insulating film and the first polysilicon film to define a core made of the first insulating film and a bottom electrode made of the first polysilicon film; forming in sequence an undoped second polysilicon film and a second insulating film over the core and the bottom electrode; selectively removing the second insulating film to leave a part of the second insulating film, the part of the second insulating film serving as a cylindrical spacer which surrounds sidewalls of the core and the bottom electrode with intervention of the second polysilicon film; selectively removing a portion the second polysilicon film using the cylindrical spacer as a mask to form an undoped-polysilicon-film spacer interposed between the core and the cylindrical spacer; removing the cylindrical spacer and the core with leaving the bottom electrode and the undoped-polysilicon-film spacer; and introducing an impurity into the undoped-polysilicon-film spacer to form a cylindrical electrode, and to form a storage node electrode comprising the cylindrical electrode and the bottom electrode, the storage node electrode serves as one electrode of the capacitor.

Claims

1. A process for fabricating a semiconductor device having a capacitor, said process comprising the steps of:

providing a semiconductor substrate having a transistor formed therein;

forming an interlayer insulating film over a surface of the semiconductor substrate;

forming in sequence an impurity-doped first polysilicon film and a first insulating film on a surface of said interlayer insulating film;

selectively removing said first insulating film and said impurity-doped first polysilicon film to define a core made of said first insulating film and a bottom electrode made of said impurity-doped first polysilicon film;

forming in sequence an impurity-undoped second polysilicon film and a second insulating film over said core and said bottom electrode;

selectively removing said second insulating film until a portion of said impurity-undoped second polysilicon film covering a top surface of said core is exposed to thereby form a part of said second insulating film, wherein said part of said second insulating film serves as a cylindrical spacer which surrounds a sidewall of said core and a sidewall of said bottom electrode and wherein said impurity-undoped second polysilicon film is disposed between the sidewall of said core and said cylindrical spacer;

selectively doping an impurity into said impurity-undoped second polysilicon film by using said cylindrical spacer as a mask to thereby divide said impurity-undoped second polysilicon film into an impurity-doped portion covering the top surface of said core and an impurity-undoped portion disposed between the sidewall of said core and said cylindrical spacer;

selectively removing said impurity-doped portion by using said cylindrical spacer as a mask to thereby leave said impurity-undoped portion as an impurity-undoped-polysilicon-film spacer disposed between the sidewall of said core and said cylindrical spacer;

removing said cylindrical spacer and said core while leaving said bottom electrode and said impurity-undoped-polysilicon-film spacer; and

introducing an impurity into said impurity-undoped-polysilicon-film spacer to form a cylindrical electrode and to form a storage node electrode comprising said cylindrical electrode and said bottom electrode, wherein said storage node electrode serves as one electrode of said capacitor.

2. The process of claim 1, wherein at least a surface of said interlayer insulating film comprises a silicon nitride film;

said first insulating film comprises one of a silicon oxide film, a PSG film and a BPSG film;

said second insulating film comprises one of a silicon oxide film, a PSG film and a BPSG film; and

said cylindrical spacer and said core are selectively removed with buffered hydrofluoric acid.

3. The process of claim 1, wherein said interlayer insulating film comprises a silicon oxide film;

said first insulating film comprises one of a PSG film and a BPSG film;

said second insulating film comprises one of a PSG film and a BPSG film; and

said cylindrical spacer and said core are selectively removed by vapor etching with hydrogen fluoride gas.

4. The process of claim 1, wherein said interlayer insulating film comprises one of a silicon oxide film, a BSG film and a BPSG film;

said first and second insulating films comprises a PSG film; and

said cylindrical spacer and said core are selectively removed by wet etching with dilute hydrofluoric acid.

5. A process for fabricating a semiconductor device having a capacitor, said process comprising the steps of:

providing a semiconductor substrate having a transistor formed therein;

forming an interlayer insulating film over a surface of the semiconductor substrate;

forming in sequence an impurity-doped first polysilicon film and a first insulating film on a surface of said interlayer insulating film;

selectively removing said first insulating film to define a core made of said first insulating film;

forming in sequence an impurity-undoped second polysilicon film and second insulating film over said core;

selectively removing said second insulating film until a portion of said impurity-undoped second polysilicon film covering a top surface of said core is exposed to thereby form a part of said second insulating film, wherein said part of said second insulating film serves as a cylindrical spacer which surrounds a sidewall of said core and wherein said impurity-undoped second polysilicon film is disposed between the sidewall of said core and said cylindrical spacer;

selectively doping an impurity into said impurity-undoped second polysilicon film by using said cylindrical spacer as a mask to thereby divide said impurity-undoped second polysilicon film into a first impurity-doped portion covering the top surface of said core, an impurity-undoped portion disposed between the sidewall of said core and said cylindrical spacer, and a second impurity-doped portion formed on a corresponding portion of said impurity-doped first polysilicon film;

selectively removing said first and second impurity-doped portions and said corresponding portion of said impurity-doped first polysilicon film by using said cylindrical spacer as a mask to thereby leave said impurity-undoped portion as an impurity-undoped-polysilicon-film spacer wherein said impurity-undoped-polysilicon-film spacer is disposed between the sidewall of said core, said cylindrical spacer, and a bottom electrode of said impurity-doped first polysilicon film;

removing said cylindrical spacer and said core while leaving said impurity-undoped-polysilicon-film spacer; and

introducing an impurity into said impurity-undoped-polysilicon-film spacer to form a cylindrical electrode and to form a storage node electrode comprising said cylindrical electrode and said bottom electrode, wherein said storage node electrode serves as one electrode of said capacitor.

6. The process of claim 5, wherein at least a surface of said interlayer insulating film comprises a silicon nitride film;

said first insulating film comprises one of a silicon oxide film, a PSG film and a BPSG film;

said second insulating film comprises one of a silicon oxide film, a PSG film and a BPSG film; and

said cylindrical spacer and said core are selectively removed with buffered hydrofluoric acid.

7. The process of claim 5, wherein said interlayer insulating film comprises a silicon oxide film;

said first insulating film comprises one of a PSG film and a BPSG film;

said second insulating film comprises one of a PSG film and a BPSG film; and

said cylindrical spacer and said core are selectively removed by vapor etching with hydrogen fluoride gas.

8. The process of claim 5, wherein said interlayer insulating film comprises one of a silicon oxide film, a BSG film and a BPSG film;

said first and second insulating films comprises a PSG film; and

said cylindrical spacer and said core are selectively removed by wet etching with dilute hydrofluoric acid.

9. A process for fabricating a semiconductor device having a capacitor, said process comprising the steps of:

providing a semiconductor substrate having a transistor formed therein;

forming an interlayer insulating film over a surface of the semiconductor substrate;

forming in sequence a first polysilicon film and a first insulating film on a surface of said interlayer insulating film;

selectively removing said first insulating film to define a core made of said first insulating film;

selectively removing said first polysilicon film to define a bottom electrode made of said first polysilicon film;

forming in sequence an undoped second polysilicon film and a second insulating film over said core;

selectively removing said second insulating film until a portion of said undoped second polysilicon film covering a top surface of said core is exposed to thereby form a part of said second insulating film, wherein said part of said second insulating film serves as a cylindrical spacer which surrounds a sidewall of said core and wherein said second polysilicon film is disposed between the sidewall of said core and said cylindrical spacer;

selectively doping an impurity into said undoped second polysilicon film by using said cylindrical spacer as a mask to thereby divide said undoped polysilicon film into an impurity-doped portion covering the top surface of said core and an impurity-undoped portion disposed between the sidewall of said core and said cylindrical spacer;

selectively removing said impurity-doped portion by using said cylindrical spacer as a mask to thereby leave said impurity-undoped portion as an undoped-polysilicon-film spacer disposed between the sidewall of said core and said cylindrical spacer;

removing said cylindrical spacer and said core while leaving said bottom electrode and said undoped-polysilicon-film spacer; and

introducing an impurity into said undoped-polysilicon-film spacer to form a cylindrical electrode and to form a storage node electrode comprising said cylindrical electrode and said bottom electrode, wherein said storage node electrode serves as one electrode of said capacitor.

10. The process of claim 9, wherein at least a surface of said interlayer insulating film comprises a silicon nitride film;

said first insulating film comprises one of a silicon oxide film, a PSG film and a BPSG film;

said second insulating film comprises one of a silicon oxide film, a PSG film and a BPSG film; and

said cylindrical spacer and said core are selectively removed with buffered hydrofluoric acid.

11. The process of claim 9, wherein said interlayer insulating film comprises a silicon oxide film;

said first insulating film comprises one of a PSG film and a BPSG film;

said second insulating film comprises one of a PSG film and a BPSG film; and

said cylindrical spacer and said core are selectively removed by vapor etching with hydrogen fluoride gas.

12. The process of claim 9, wherein said interlayer insulating film comprises one of a silicon oxide film, a BSG film and a BPSG film;

said first and second insulating films comprises a PSG film; and

said cylindrical spacer and said core are selectively removed by wet etching with dilute hydrofluoric acid.