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Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications

  • US 5,436,204 A
  • Filed: 08/22/1994
  • Issued: 07/25/1995
  • Est. Priority Date: 04/12/1993
  • Status: Expired due to Term
First Claim
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1. A process for fabricating thin-film semiconductor devices, comprising the steps of:

  • depositing thin-film precursors of Cu and (In,Ga) on a substrate in a Cu-rich ratio with Cu/(In,Ga)>

    1.0;

    annealing the thin-film precursors in the presence of Se at a moderate temperature in the range of 400°

    -500°

    C. to form thin-film Cu(In,Ga)Se2 ;

    Cux Se phase-separated mixture;

    exposing the thin-film Cu(In,Ga)Se2 ;

    Cux Se phase-separated mixture to (In,Ga) vapor in addition to Se to deposit (In,Ga) and Se on the thin-film Cu(In,Ga)Se2 ;

    Cux Se phase-separated mixture while raising the temperature of the thin-film Cu(In,Ga)Se2 ;

    Cux Se phase-separated mixture from the moderate temperature to a higher recrystallization temperature to a higher recrystallization temperature in the range of 500°

    -600°

    C.;

    maintaining the thin-film at the higher recrystallization temperature to recrystallize the Cux Se with the (In,Ga) and Se to form a Cu(In,Ga)Se2 thin-film in a Cu-poor ratio of Cu/(In,Ga)<

    1.0.

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