Recrystallization method to selenization of thin-film Cu(In,Ga)Se.sub.2 for semiconductor device applications
First Claim
1. A process for fabricating thin-film semiconductor devices, comprising the steps of:
- depositing thin-film precursors of Cu and (In,Ga) on a substrate in a Cu-rich ratio with Cu/(In,Ga)>
1.0;
annealing the thin-film precursors in the presence of Se at a moderate temperature in the range of 400°
-500°
C. to form thin-film Cu(In,Ga)Se2 ;
Cux Se phase-separated mixture;
exposing the thin-film Cu(In,Ga)Se2 ;
Cux Se phase-separated mixture to (In,Ga) vapor in addition to Se to deposit (In,Ga) and Se on the thin-film Cu(In,Ga)Se2 ;
Cux Se phase-separated mixture while raising the temperature of the thin-film Cu(In,Ga)Se2 ;
Cux Se phase-separated mixture from the moderate temperature to a higher recrystallization temperature to a higher recrystallization temperature in the range of 500°
-600°
C.;
maintaining the thin-film at the higher recrystallization temperature to recrystallize the Cux Se with the (In,Ga) and Se to form a Cu(In,Ga)Se2 thin-film in a Cu-poor ratio of Cu/(In,Ga)<
1.0.
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Accused Products
Abstract
A process for fabricating slightly Cu-poor thin-films of Cu(In,Ga)Se2 on a substrate for semiconductor device applications includes the steps of forming initially a slightly Cu-rich, phase separated, mixture of Cu(In,Ga)Se2 :Cux Se on the substrate in solid form followed by exposure of the Cu(In,Ga)Se2 :Cux Se solid mixture to an overpressure of Se vapor and (In,Ga) vapor for deposition on the Cu(In,Ga)Se2 :Cux Se solid mixture while simultaneously increasing the temperature of the solid mixture toward a recrystallization temperature (about 550° C.) at which Cu(In,Ga)Se2 is solid and Cux Se is liquid. The (In,Ga) flux is terminated while the Se overpressure flux and the recrystallization temperature are maintained to recrystallize the Cux Se with the (In, Ga) that was deposited during the temperature transition and with the Se vapor to form the thin-film of slightly Cu-poor Cux (In,Ga)y Sez. The initial Cu-rich, phase separated large grain mixture of Cu(In,Ga)Se2 :Cux Se can be made by sequentially depositing or co-depositing the metal precursors, Cu and (In, Ga), on the substrate at room temperature, ramping up the thin-film temperature in the presence of Se overpressure to a moderate anneal temperature (about 450° C.) and holding that temperature and the Se overpressure for an annealing period. A nonselenizing, low temperature anneal at about 100° C. can also be used to homogenize the precursors on the substrates before the selenizing, moderate temperature anneal.
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Citations
26 Claims
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1. A process for fabricating thin-film semiconductor devices, comprising the steps of:
-
depositing thin-film precursors of Cu and (In,Ga) on a substrate in a Cu-rich ratio with Cu/(In,Ga)>
1.0;annealing the thin-film precursors in the presence of Se at a moderate temperature in the range of 400°
-500°
C. to form thin-film Cu(In,Ga)Se2 ;
Cux Se phase-separated mixture;exposing the thin-film Cu(In,Ga)Se2 ;
Cux Se phase-separated mixture to (In,Ga) vapor in addition to Se to deposit (In,Ga) and Se on the thin-film Cu(In,Ga)Se2 ;
Cux Se phase-separated mixture while raising the temperature of the thin-film Cu(In,Ga)Se2 ;
Cux Se phase-separated mixture from the moderate temperature to a higher recrystallization temperature to a higher recrystallization temperature in the range of 500°
-600°
C.;maintaining the thin-film at the higher recrystallization temperature to recrystallize the Cux Se with the (In,Ga) and Se to form a Cu(In,Ga)Se2 thin-film in a Cu-poor ratio of Cu/(In,Ga)<
1.0. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification