High performance gaas devices and method
First Claim
1. A III-V compound-based device comprising:
- (a) a substrate;
(b) an active region grown on said substrate and incorporating the active segments of said device; and
(c) an insulating stratum formed in said active region adjacent said substrate;
(d) said stratum comprising a plurality of arsenic precipitates formed therein;
(e) said plurality of arsenic precipitates containing an excess arsenic in a range from about one to about 1.5 atomic percent.
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Accused Products
Abstract
High performance GaAs and AlGaAs-based devices and a process enabling the manufacture of new III-V compound technologies are disclosed. The GaAs devices are particularly useful as VLSICs by possessing a high degree of electrical insulation, both vertical and lateral, between closely packed active devices. Essentially, the GaAs devices include a substrate on which is formed, preferably by epitaxial growth or by ion implantation, an active GaAs, or AlGaAs region incorporating, by appropriate doping, the simultaneously therein formed active segments. The active segments are electrically shielded by providing insulating stratums in the active GaAs, AlGaAs region surrounding the active segments. Preferably, the insulating stratums are formed therein by implanting arsenic ions therein so as to form arsenic precipitates. Preferably, a passivated surface layer also is formed in part of the surface of the GaAs, AlGaAs active layer, also preferably by implanting arsenic ions therein. Following implantation, the GaAs, AlGaAs devices are annealed in a reactor preferably at a temperature of about 600° C. in an arsine ambient gas for a period of about 10 minutes.
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Citations
10 Claims
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1. A III-V compound-based device comprising:
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(a) a substrate; (b) an active region grown on said substrate and incorporating the active segments of said device; and (c) an insulating stratum formed in said active region adjacent said substrate; (d) said stratum comprising a plurality of arsenic precipitates formed therein; (e) said plurality of arsenic precipitates containing an excess arsenic in a range from about one to about 1.5 atomic percent. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A GaAs device for use as a very large scale GaAs integrated circuit, said device comprising:
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(a) a substrate formed of one of a group consisting of;
a GaAs, AlGaAs, AlGaAs-on-GaAs, Ge, GaAs-on-GE, Si, GaAs-on-Si, GaAs-on-Ge-on-Si, Silicon-on-Insulator, and GaAs on Silicon-on-Insulator substrate;(b) an active region epitaxially grown on said substrate, said active region incorporating the active segments of said device; (c) insulating stratums formed in said active region and surrounding said active segments, said insulating stratums providing both lateral and vertical electrical insulation to said device to eliminate backgating and sidegating effects of said device; (d) said insulating stratums being formed by implanting excess arsenic ions in a range from about one to about 1.5 atomic percent into said active region, followed by anneal; and (e) a passivated surface layer formed in the surface of said active region in operative association with at least one of said active segments. - View Dependent Claims (9, 10)
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Specification