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Interconnect structures having tantalum/tantalum oxide layers

  • US 5,436,504 A
  • Filed: 05/19/1993
  • Issued: 07/25/1995
  • Est. Priority Date: 05/07/1990
  • Status: Expired due to Term
First Claim
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1. A metal/dielectric high-density interconnect structure produced by the method comprising the steps:

  • (a) providing a substrate coated on its upper surface with patterned electroplating seed layers, and a photosensitive dielectric layer photopatterned thereover, which exposes the electroplating seed layers through trenches in the dielectric layer, the electroplating seed layers being conductive;

    (b) depositing on and within the trenches of said dielectric layer and on said exposed electroplating seed layers a substantially continuous layer of tantalum;

    (c) forming a substantially continuous layer of anodic tantalum oxide on said tantalum layer to produce a tantalum/tantalum oxide layer;

    (d) patterning said tantalum/tantalum oxide layer to expose said electroplating seed layers while maintaining electrical connection between said electroplating seed layers and said tantalum layer;

    (e) electroplating a metal conductor on said electroplating seed layers to form a pattern of unexposed and exposed tantalum/tantalum oxide layers, the unexposed tantalum/tantalum oxide layers being covered by the metal conductor; and

    (f) removing the exposed tantalum/tantalum oxide layers to electrically isolate said metal conductor lines, and to thereby produce a planar interconnect structure, wherein the tantalum/tantalum oxide layers remain within the trenches between the dielectric layer and the conductor.

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