Nonvolatile memory with volatile memory buffer and a backup power supply system

• US 5,438,549 A
• Filed: 02/28/1994
• Issued: 08/01/1995
• Est. Priority Date: 02/28/1994
• Status: Expired due to Term

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Levy, Markus A.
• Primary Examiner(s): YOO, DO H
• Application Number:
  US08/202,438
• Time in Patent Office: 519 Days
• Field of Search: 365/185, 365/900, 365/228, 365/229
• US Class Current: 365/229
• CPC Class Codes: G11C 5/141 Battery and back-up supplies

Abstract

A memory device that resides on a single substrate includes a nonvolatile memory array. Control circuitry is coupled to the memory array for controlling memory operations with respect to the memory array. A volatile memory buffer is coupled to the control circuitry for buffering data that is to be written into the memory array. The control circuitry fetches the data from the memory buffer to store in the memory array. A power supply control circuit is provided for detecting loss of a power supply applied to the memory buffer and for coupling a backup power supply to the memory buffer when the power supply is disconnected from the memory buffer such that data integrity of the memory device is maintained.

Claims

1. A memory device, comprising:

(A) a nonvolatile memory array;

(B) control circuitry coupled to the memory array for controlling operations of the memory array;

(C) a volatile memory buffer coupled to the control circuitry for buffering data to be written into the memory array, wherein the control circuitry fetches the data from the memory buffer to store in the memory array;

(D) a power supply control circuit coupled to the volatile memory buffer, a power supply, and a backup power supply for detecting loss of the power supply applied to the memory buffer and for coupling the backup power supply to the memory buffer when the power supply is disconnected from the memory buffer such that data integrity of the memory device is maintained, wherein the nonvolatile memory array, the control circuitry, the volatile memory buffer, and the power supply control circuit all reside on a single semiconductor substrate.

2. The memory device of claim 1, wherein the power supply control circuit further comprises

(i) a voltage detector for detecting a potential level of the power supply, wherein the voltage detector detects the loss of the power supply when the voltage detector detects that the potential level of the power supply is below a first voltage state;

(ii) a switching circuit controlled by the voltage detector for disconnecting the power supply from the memory buffer and for connecting the backup power supply to the memory buffer when the voltage detector detects that the potential level of the power supply is below the first voltage state.

3. The memory device of claim 2, wherein the backup power supply is a battery.

4. The memory device of claim 2, wherein the switching circuit disconnects the backup power supply from the memory buffer when the voltage detector detects that the potential level of the power supply is higher than the first voltage state.

5. The memory device of claim 2, wherein the switching circuit comprises field effect switching transistors.

6. The memory device of claim 1, wherein the control circuitry fetches the data from the memory buffer to store in the memory array when the memory buffer is full of the data or the control circuitry is requested to fetch the data from the memory buffer.

7. The memory device of claim 1, wherein the memory device is an electrically erasable and electrically programmable memory, wherein the volatile memory buffer is a static random access memory buffer.

8. A computer system, comprising:

(A) a system bus;

(B) a central processing unit (CPU) coupled to the system bus;

(C) a plurality of peripheral devices, each of which being coupled to the system bus;

(D) a memory device coupled to the system bus, wherein the memory device resides on a single semiconductor substrate, wherein the memory device further comprises

(i) a nonvolatile memory array;

(ii) control circuitry coupled to the memory array for controlling operations of the memory array;

(iii) a volatile memory buffer coupled to the control circuitry for buffering data to be written into the memory array, wherein the control circuitry fetches the data from the memory buffer to store in the memory array; and

(iv) a power supply control circuit coupled to the volatile memory buffer, a power supply, and a backup power supply for detecting loss of the power supply applied to the memory buffer and for coupling the backup power supply to the memory buffer when the power supply is disconnected from the memory buffer such that data integrity of the memory device is maintained, wherein the nonvolatile memory array, the control circuitry, the volatile memory buffer, and the power supply control circuit all reside on the single semiconductor substrate.

9. The computer system of claim 8, wherein the power supply control circuit further comprises

(i) a voltage detector for detecting a potential level of the power supply, wherein the voltage detector detects the loss of the power supply when the voltage detector detects that the potential level of the power supply is below a first voltage state;

(ii) a switching circuit controlled by the voltage detector for disconnecting the power supply from the memory buffer and for connecting the backup power supply to the memory buffer when the voltage detector detects that the potential level of the power supply is below the first voltage state.

10. The computer system of claim 9, wherein the backup power supply is a battery.

11. The computer system of claim 9, wherein the switching circuit disconnects the backup power supply from the memory buffer when the voltage detector detects that the potential level of the power supply is higher than the first voltage state.

12. The computer system of claim 9, wherein the switching circuit comprises field effect switching transistors.

13. The computer system of claim 8, wherein the control circuitry fetches the data from the memory buffer to store in the memory array when the memory buffer is full of the data or the control circuitry is requested to fetch the data from the memory buffer.

14. The computer system of claim 8, wherein the memory device is an electrically erasable and electrically programmable memory, wherein the volatile memory buffer is a static random access memory buffer.