Laminated thermo element

• US 5,439,528 A
• Filed: 10/31/1994
• Issued: 08/08/1995
• Est. Priority Date: 12/11/1992
• Status: Expired due to Fees

• Current Assignee: Joel Miller
• Original Assignee: Joel Miller
• Inventors: Miller, Joel
• Primary Examiner(s): Walsh, Donald P.
• Assistant Examiner(s): CARROLL, CHRISMAN DION
• Application Number:
  US08/332,506
• Time in Patent Office: 281 Days
• Field of Search: 136/200, 136/201, 136/211, 136/212, 136/224, 136/225, 136/227, 136/236.1, 136/237, 136/238, 136/239, 136/242, 257/15, 257/16, 257/17, 257/22, 257/23, 257/28, 257/467, 257/468, 257/470, 257/930
• US Class Current: 136/200
• CPC Class Codes: H10N 10/01 Manufacture or treatment
• CPC Class Codes: H10N 10/817 the junction being non-separable, e.g. being cemented, sintered or soldered
• CPC Class Codes: H10N 10/854 comprising only metals H10N10/852, H10N10/853 take precedence
• CPC Class Codes: Y10S 257/93 Thermoelectric, e.g. peltier effect cooling

Abstract

A thermoelement (leg) of a thermocouple for use in peltier heating or generation of power by the Seebeck effect including a plurality of interleaved films wherein compositions of neighboring films are selected to create Kapitza boundaries between the films such as to reduce thermal conductivity but provide adequate electrical conductivity. The plurality of interleaved films includes a semiductor with suitable doping to establish required extrinsic conductivity and metals having dissimilar lattices such as aluminum and tungsten abutting one another. The practical number of films in the composite to establish the effect is ten. A preferred thickness of the films is less than twenty thousand Angstroms.

Claims

1. A thermoelement which comprises:

a stack of a plurality of films, each film having a composition which is different from a composition of either one of its neighboring films;

at least one of said films being aluminum;

said stack of films having a first end surface and a last end surface;

a first substrate contacting said first end surface and a second substrate contacting said last end surface;

said first and second substrates being composed of material selected front a group of materials which consists of p type and n type semiconductors.

2. A thermoelement as in claim 1 wherein the composition of each one of said plurality of films is selected from a group of compositions which consists of aluminum and tungsten.

3. A thermoelement as in claim 1 which comprises at least one of said at least one of said aluminum layers being in contact with a tungsten layer.

4. A thermoelement as in claim 1 which comprises at least one of said plurality of films having a composition selected from a group that consists of a p type semiconductor, an n type semiconductor and tungsten.

5. A thermoelement as in claim 1 wherein a thickness of each said film of said plurality of films is less than twenty thousand Angstroms.

6. A thermoelement as in claim 1 wherein at least one of said plurality of films has a composition that is selected from a group of compositions which consists of p-doped lead selenide, n-doped lead selenide, p type telluride and n type lead telluride.

7. A thermoelement as in claim 1 wherein the composition of each one of said plurality of films is selected from a group of compositions which consists of a doped lead chalcogen compound, tungsten and aluminum and said plurality of films includes tungsten films that are about one thousand Angstroms thick, said layers of doped lead chalogen compound films are about five hundred Angstroms thick and said aluminum films are about one thousand Angstroms thick.

10. A thermoelement as in claim 1 which comprises at least one aluminum film being in contact with a film selected from a group of metals that consists of tungsten, molybdenum and tantalum.

8. A thermocouple of the type having a first leg and a second leg, said first leg comprising:

a first stack of a first plurality of films, each film having a composition which is different from a composition of either one of its neighboring films;

at least one of said first plurality of films being aluminum;

said stack of films having a first end surface and a second end surface

a first substrate contacting said first end surface and a second substrate contacting said second end surface;

said first and second substrates being composed of a p type semiconductor; and

said second leg comprising;

a second stack of a second plurality of films, each film having a composition which is different from a composition of either one of its neighboring films;

at least one of said first plurality of films being aluminum;

said second stack of films having a third end surface and a fourth end surface;

a third substrate contacting said third end surface and a fourth substrate contacting said fourth end surface;

said third and fourth substrates being composed of an n type semiconductor

means for forming an electrical contact between said second and third substrates

a first terminal connected to said first substrate and a second terminal connected to said fourth substrate.

9. A thermoelement which comprises

a stack of a plurality of tungsten layers interleaved with layers of lead telluride and having a pair of outside layers being lead telluride.

11. A thermoelement which comprises

a stack of a plurality of metal layers, each metal layer interleaved with a layer of lead telluride, said stack having a pair of outside layers being lead telluride wherein each metal layers is selected from a group of metals that consists of tungsten, molybdenum and tantalum.

12. A thermoelement which comprises:

a stack of a plurality of layers of tungsten interleaved with layers of lead telluride, said stack having outside layers of tungsten.