Apparatus for low pressure chemical vapor deposition
First Claim
1. Apparatus for low pressure chemical vapor deposition comprising:
- a deposition base having a compound source gas inlet and a reaction product outlet at opposed sides thereof;
a reactor airtightly coupled to a top end of said deposition base at its bottom end;
a closing plate provided on the bottom of said deposition base for selectively closing a bottom opening of said deposition base;
a boat lifting ram movably penetrating a center opening of said closing plate, said ram being provided with a boat support on its top end;
a boat seated on said boat support of the ram and supporting a plurality of wafers thereon;
means for introducing a compound source gas to a top section of said reactor and ejecting said source gas at that top section of the reactor, said gas introducing means being connected to said compound source gas inlet of the base at its bottom end and positioned about a top section of said boat at its top end; and
heating means for heating said reactor, said heating means surrounding said reactor.
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Abstract
Apparatus for low pressure chemical vapor deposition. The LPCVD apparatus of this invention has a compound source gas flow path which is formed between the inside and outside quartz tubes of the reactor. With the path, the apparatus supplies the compound source gas from the upper section to the lower section of the reactor and lets the source gas be introduced into the deposition reacting space of the reactor while being sufficiently mixed and sufficiently heated and achieves the desired deposition result of uniform quality and thickness of chemical thin layers. The LPCVD apparatus also prevents introduction of oxygen into the reactor when washing the quartz tubes of reactor using N2 gas, thus to prevent forming of undesirable oxide on the wafers and to minimize the fraction defective of result wafers. In LPCVD apparatus of this invention, the inside and outside quartz tubes of the reactor are easily separated and assembled with respect to the apparatus housing, thus to be easily washed or substituted with new tubes and to be produced in mass production with lower cost.
39 Citations
21 Claims
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1. Apparatus for low pressure chemical vapor deposition comprising:
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a deposition base having a compound source gas inlet and a reaction product outlet at opposed sides thereof; a reactor airtightly coupled to a top end of said deposition base at its bottom end; a closing plate provided on the bottom of said deposition base for selectively closing a bottom opening of said deposition base; a boat lifting ram movably penetrating a center opening of said closing plate, said ram being provided with a boat support on its top end; a boat seated on said boat support of the ram and supporting a plurality of wafers thereon; means for introducing a compound source gas to a top section of said reactor and ejecting said source gas at that top section of the reactor, said gas introducing means being connected to said compound source gas inlet of the base at its bottom end and positioned about a top section of said boat at its top end; and heating means for heating said reactor, said heating means surrounding said reactor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification