Semiconductor light emitting device having AlGaAsP light reflecting layers

• US 5,442,203 A
• Filed: 08/18/1994
• Issued: 08/15/1995
• Est. Priority Date: 08/24/1993
• Status: Expired due to Fees

• Current Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Original Assignee: Shin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
• Inventors: Noto, Nobuhiko, Takenaka, Takao, Adomi, Keizo
• Primary Examiner(s): Mintel, William
• Assistant Examiner(s): Tran, Minhloan
• Application Number:
  US08/299,084
• Time in Patent Office: 362 Days
• Field of Search: 257/94, 257/96, 257/97, 257/98, 372/45, 372/46, 372/92, 372/96, 372/98
• US Class Current: 257/97
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01S 5/20 Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
• CPC Class Codes: H01S 5/2004 Confining in the direction perpendicular to the layer structure
• CPC Class Codes: H01S 5/3211 characterised by special cladding layers, e.g. details on band-discontinuities
• CPC Class Codes: H01S 5/32308 emitting light at a wavelength less than 900 nm
• CPC Class Codes: H01S 5/32325 red laser based on InGaP

Abstract

A semiconductor light emitting device has a light emitting layer portion comprising AlGaInP layers formed on a GaAs substrate. A light reflecting layer portion comprising alternately laminated layers with different refractive indices is provided between the GaAs substrate and the light emitting layer portion. The light reflecting layer portion comprises Al_w Ga_1-w As_1-v P_v layers (where: 0≦w≦1, 0<v≦0.05 w). An active layer which constitutes the light emitting layer portion comprises an (Al_y Ga_1-y)₀.51 In₀.49 P layer (where: 0≦y≦0.7).

Claims

1. A semiconductor light emitting device in which a light emitting layer portion comprising AlGaInP layers is formed on a GaAs substrate and a light reflecting layer portion comprising alternately laminated layers with different refractive indices is provided between said GaAs substrate and said light emitting layer portion, wherein:

said light reflecting layer portion comprises Al_w Ga_1-w As_1-v P_v layers (where, 0≦

w≦

1, 0<

v≦

0.05 w).

2. A semiconductor light emitting device as described in claim 1 wherein:

an active layer constituting said light emitting layer portion comprises an (Al_y Ga_1-y)₀.51 In₀.49 P layer (where, 0≦

y≦

0.7).

3. A semiconductor light emitting device as described in claim 1 wherein:

said light reflecting layer portion comprises Al₀.6 Ga₀.4 As₀.98 P₀.02 layers and Al₀.8 Ga₀.1 As₀.97 P₀.03 layers which are alternately laminated.

4. A semiconductor light emitting device as described in claim 1 wherein:

each of said alternately laminated layers in said light reflecting layer portion has a thickness of approximately 400 Å

.

5. A semiconductor light emitting device as described in claim 1 wherein:

a current spreading layer is provided on said light emitting layer portion.

6. A semiconductor light ,emitting device as described in claim 5 wherein:

said current spreading layer comprises an Al_w Ga_1-w As_v P_1-v layer (where, 0.45≦

w<

1, 0<

v≦

0.08).

7. A semiconductor light emitting device as described in claim 1 wherein:

said alternately laminated layers in said light reflecting layer portion are grown by the MOVPE method.