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Semiconductor device

  • US 5,442,210 A
  • Filed: 10/28/1993
  • Issued: 08/15/1995
  • Est. Priority Date: 11/12/1992
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a DRAM portion;

    a flash memory portion;

    said DRAM portion and said flash memory portion both being formed on a main surface of a common semiconductor substrate;

    a first insulation layer;

    said DRAM portion having a first capacitor with a first electrode separated from said main surface of said substrate by said first insulation layer;

    said flash memory portion having a floating gate separated from said main surface by said first insulation layer and formed of the same material as said first electrode; and

    said first insulation layer in said flash memory portion forming a tunnel oxide film.

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