Flexible radiation probe

• US 5,444,254 A
• Filed: 06/07/1993
• Issued: 08/22/1995
• Est. Priority Date: 06/12/1992
• Status: Expired due to Term

• Current Assignee: Best Theratronics Incorporated
• Original Assignee: Thomson & Nielsen Electronics Limited
• Inventors: Thomson, Ian
• Primary Examiner(s): Dzierzynski, Paul M.
• Assistant Examiner(s): HANIG, RICHARD E
• Application Number:
  US08/072,710
• Time in Patent Office: 806 Days
• Field of Search: 250/370.07, 250/370.14, 250/370.01, 250/371, 128/659
• US Class Current: 250/370.07
• CPC Class Codes: A61B 6/4258 for detecting non x-ray radiation, e.g. gamma radiation A61B6/037 takes precedence
• CPC Class Codes: A61N 5/1048 Monitoring, verifying, controlling systems and methods
• CPC Class Codes: G01T 1/026 Semiconductor dose-rate meters
• CPC Class Codes: G01T 1/161 Applications in the field of nuclear medicine, e.g. in vivo counting apparatus for radiation diagnosis A61B6/00
• CPC Class Codes: G01T 1/24 with semiconductor detectors

Abstract

This invention describes a flexible radiation probe which has a pair of insulated gate field effect transistors integrated into the same substrate each having a gate, source and drain. The transistors are mounted at the end of a flexible circuit board. The flexible circuit board has conductive tracks which connect the gate, source and drains of each of the transistors to a connection at an opposite end of the flexible circuit board. This connection end may then be connected to a suitable differential biasing circuit for biasing the transistors, and a circuit for reading the differential threshold voltages of the transistors. This differential threshold voltage being indicative of radiation received by the transistors when exposed in the bias mode. The flexible circuit allows the probe to be used in catheters or similar medical equipment.

Claims

1. A flexible radiation probe comprising:

a semiconductor substrate with a pair of insulated gate field effect transistors integrated into said semiconductor substrate, each having a gate, source and drain; and

an elongated flexible member having;

a first end for supporting said semiconductor substrate,

a second end remote to said first end, said second end being provided with connecting means for electrical connection to external circuitry, and

conductor means provided in said flexible member for connecting said gate, source and drains of each of said transistors to said connecting means.

2. A probe as defined in claim 1, said first end including a rigid member for mounting said semiconductor substrate thereon.

3. A probe as defined in claim 1, wherein said first end is provided with a rigid member having said semiconductor substrate fixed thereof, a plurality of bonding pads arranged around said semiconductor substrate, for connecting said source, drain and gate of each of said transistors to a respective one of said bonding pads.

4. A probe as defined in claim 3, said semiconductor substrate and said bonding pads being covered with a suitable epoxy.

5. A probe as defined in claim 1, said semiconductor substrate being surrounded along its edges by a wall of insulating material.

6. A probe as defined in claim 5, including a metal cover arranged over the top surface of said semiconductor and being supported by said wall.

7. A probe as defined in claim 6, said metal cover being metallised mylar.

8. A probe as defined in claim 6, said metal cover being a foil of aluminum.

9. A probe as defined in claim 5, said metal cover having a thickness of 7 mg/cm².

10. A probe as defined in claim 1, said external circuitry including means for differentially biasing said transistors and means for reading a differential threshold voltage between said transistors.

11. A probe as defined in claim 1, said conductor means including a plurality of electrically conductive tracks, each extending between said first and second ends.

12. A probe as defined in claim 11, said tracks being copper.

13. A probe as defined in claim 1, said tracks each being 0.01 inches wide and having a thickness in the range of 0.002 to 0.01 cm.

14. A probe as defined in claim 3, wherein each of said tracks is enlarged at said first and said second end to form a first and a second pad, each of said first pads being connected to a bonding pad.

15. A probe as defined in claim 11, said flexible member being a multilayer circuit board.

16. A probe as defined in claim 15, in which said multilayer circuit board is composed of alternately superposed layers of polyimide film and layers of said connection tracks.

17. A probe as defined in claim 16, said polyimide being Kapton.

18. A probe as defined in claim 1, in which the width of said flexible member is smaller than a diameter of a catheter so that said flexible radiation probe may be inserted into said catheter.

28. A method as defined in claim 10 wherein said probe is inserted into a catheter.

33. A probe as defined in claim 5, including a metal cover arranged over the top surface of said semiconductor substrate and being supported by said wall.

34. A probe as defined in claim 33, said metal cover being metallised mylar.

35. A probe as defined in claim 33, said metal cover being a foil of aluminum.

36. A probe as defined in claim 33, said metal cover having a thickness of 7 mg/cm².

19. A radiation dosimeter comprising:

a flexible member having a plurality of electrical connection tracks extending between first and second ends thereof;

a semiconductor radiation sensor supported on said first end of said flexible member, said sensor having a pair of insulated gate field effect transistors integrated into a semiconductor substrate each having a gate, source and drain, and said electrical connection tracks for connecting to a respective one of said source, drain and gate; and

terminal means at said second end for receiving a differentially biasing signal so that one of said transistors is more sensitive to ionizing radiation than the other of said transistors during exposure of said transistors to radiation.

20. A dosimeter as defined in claim 19, including reader means connectable to said second end of said flexible member for reading out the differential threshold voltage between said transistors after irradiation, said differential threshold voltage being indicative of the radiation received by said transistors.

21. A dosimeter as defined in claim 19, said biasing means being a battery.

22. A dosimeter as defined in claim 19, said biasing means including a memory means for storing user information and dosimeter information.

23. A dosimeter as defined in claim 22, said memory means being an EEPROM.

24. A dosimeter as defined in claim 22, said reader including a visual display for displaying said radiation dose.

25. A dosimeter as defined in claim 19, said flexible member further including a fastening tab at said first end for attaching said first end to a predetermined position on body.

26. A radiation dosimeter comprising:

flexible means having a plurality of electrical connection tracks extending between first and second ends thereof;

a radiation sensor supported on said first end of said flexible means, said sensor having a pair of insulated gate field effect transistors integrated into a semiconductor substrate each having a gate, source and drain, said electrical connection tracks connecting said source, drain and gate to said second end; and

terminal means at said second end for periodically receiving a biasing signal and for transmitting a reading signal indicative of the differential threshold voltage between said transistors.

27. A method for monitoring of radiation applied to a patient'"'"'s body comprising the steps of:

(a) inserting into the patient'"'"'s body a flexible radiation probe having a flexible member including a plurality of electrical connection tracks extending between first and second ends thereof and a radiation sensor supported at a first end of said flexible member, said sensor having a pair of insulated gate field effect transistors integrated into a semiconductor substrate each having a gate, source and drain, said electrical connection tracks connecting said source, drain and gate to said second end;

(b) irradiating the body and differentially biasing said transistors by a bias source connected at said second end of said flexible member through said connection tracks;

(c) disconnecting said bias source from said second end of said flexible member after a predetermined time period; and

(d) reading out the differential threshold voltage between said transistors with a read out means connected at said second end of said flexible member through said connection tracks.

31. A method of claim 27 wherein step (a) comprises providing a plurality of radiation sensors each mounted on flexible means and step (b) comprises inserting said sensors at a predetermined distance apart from each other so as to measure the profile of a radiation beam.

29. A method for monitoring of radiation applied to a body comprising the steps of:

(a) inserting into the body a flexible radiation probe having a flexible member including a plurality of electrical connection tracks extending between first and second ends thereof and a radiation sensor supported at a first end of said flexible member, said sensor having a pair of insulated gate field effect transistors integrated into a semiconductor substrate each having a gate, source and drain, said electrical connection tracks connecting said source, drain and gate to said second end;

(b) periodically biasing said transistors differentially and reading out the differential threshold voltage between said transistor through said flexible member.

30. A method of claim 29 further comprising inserting said probe into a catheter.

32. A method for monitoring of radiation applied to an extremity of a body comprising the steps of:

(a) providing a flexible radiation probe having a flexible member including a plurality of electrical connection tracks extending between first and second ends thereof and a radiation sensor supported at a first end of said flexible member, said sensor having a pair of insulated gate field effect transistors integrated into the same substrate each having a gate, source and drain, said electrical connection tracks connecting said source, drain and gate to said second end;

(b) attaching said first end with said sensor, to said extremity by way of a fixing tab;

(c) connecting said second end to a means for differentially biasing said transistors; and

(d) reading out the differential threshold voltage between said transistors by a reader means, said differential threshold voltage being indicative of a radiation dose received at said extremity.

37. A probe as defined in claim 32, said semiconductor being covered with a suitable epoxy.