Method of manufacturing silicon pressure sensor having dual elements simultaneously mounted

• US 5,444,901 A
• Filed: 10/25/1993
• Issued: 08/29/1995
• Est. Priority Date: 10/25/1993
• Status: Expired due to Fees

• Current Assignee: VTI Holding Oy
• Original Assignee: United Technologies Corporation (Raytheon Technologies Corporation d/b/a RTX)
• Inventors: Lennon, James W., Towey, James P., Bullis, Robert H., Wiegand, Walter J., Gobetz, Frank W.
• Primary Examiner(s): VO, PETER DUNG BA
• Application Number:
  US08/142,237
• Time in Patent Office: 673 Days
• Field of Search: 29/25.41, 29/25.42, 29/25.35, 29/416, 29/417, 29/594, 29/595, 73/718, 257/417, 257/418, 257/419, 361/280, 361/283.1-283.4
• US Class Current: 29/25.42
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: Y10T 29/435 Solid dielectric type
• CPC Class Codes: Y10T 29/49005 Acoustic transducer
• CPC Class Codes: Y10T 29/49007 Indicating transducer

Abstract

A dual-element, parallel-plate silicon capacitative pressure sensor includes a pressure sensing element and a reference element of identical structure. Both elements are separately fabricated from the same silicon wafers using identical processing steps. Further, both elements are simultaneously mounted to a header using identical mounting steps. Such identical fabrication and mounting steps serve to identically match the dielectric materials and, thus, the aging properties of both the sensing and reference elements. By matching the sensing and reference elements in these ways, and by aging these components at elevated temperatures in exactly the same way, it is possible to achieve an extremely close match in long-term dielectric aging properties.

Claims

1. A method of fabricating a dual-element, silicon capacitive pressure sensor that provides an electrical signal indicative of a capacitance that varies in a corresponding amount to the variance in the pressure of a fluid applied to a sensing surface of the sensor, comprising the steps of:

a. fabricating a sensing element comprising a conductive silicon sensing substrate and a conductive silicon sensing diaphragm arranged in parallel and separated by a first dielectric spacer to form an enclosed sensing chamber therebetween;

b. fabricating a reference element comprising a conductive silicon reference substrate and a conductive silicon reference diaphragm arranged in parallel and separated by a second dielectric spacer to form an enclosed reference chamber therebetween, the conductive silicon reference substrate being fabricated from the same silicon wafer as the conductive silicon sensing substrate, the conductive silicon reference diaphragm being fabricated from the same silicon wafer as the conductive silicon reference diaphragm; and

c. mounting simultaneously the sensing element and reference element to a header.

2. The method of claim 1, wherein the step of mounting simultaneously the sensing element and reference element to the header includes the step of eutectically bonding the sensing element and reference element to the header.

3. The method of claim 1, after the step of mounting the sensing element and reference element simultaneously to the header, further including the step of mounting an electrical circuit to the header, the electrical circuit being responsive to the capacitance of both the sensing element and the reference element.

4. The method of claim 3, further including the step of mounting a protective covering over the sensing element, the reference element and the electrical circuit.

5. The method of claim 1, further including the step of mounting a protective covering over both the sensing element and the reference element.

6. The method of claim 1, wherein the step of fabricating a sensing element including the steps of:

a. forming a throughbore in a conductive silicon transition element, the transition element being operable to pass the fluid whose pressure is desired to be measured to a first surface of the conductive silicon sensing diaphragm, the first surface of the conductive silicon sensing diaphragm comprising the sensing surface of the sensor;

b. depositing a dielectric wall on a surface of the transition element; and

c. bonding the dielectric wall to a surface of the sensing diaphragm.

7. The method of claim 1, wherein the step of fabricating a reference element includes the steps of:

a. depositing a dielectric wall on a surface of a conductive silicon transition element; and

b. bonding the dielectric wall to a surface of the reference diaphragm.

8. The method of claim 1, before the step of mounting the sensing element and the reference element simultaneously to the header, further including the step of mounting an electrical circuit to the header, the electrical circuit being responsive to the capacitance of both the sensing element and the reference element.

9. The method of claim 8, further including the step of mounting a protective covering over the sensing element, the reference element and the electrical circuit.

10. A method of fabricating a silicon capacitive pressure sensor that senses the pressure of a fluid applied thereto and transduces this pressure value to a proportional capacitance value, which sensor includes:

a. a header;

b. a sensing element having a conductive silicon sensing substrate and a conductive silicon sensing diaphragm separated by a first dielectric spacer, and having a conductive silicon sensing transition element separated from the sensing diaphragm by a second dielectric spacer, wherein the sensing substrate and sensing diaphragm are arranged to form the parallel plates of a sensing capacitor; and

c. a reference element having a conductive silicon reference substrate formed from the same silicon wafer as the conductive silicon sensing substrate, having a conductive silicon reference diaphragm formed from the same silicon wafer as the conductive silicon reference diaphragm, the reference substrate and the reference diaphragm being separated by a third dielectric spacer, the reference element also having a conductive silicon reference transition element formed from the same silicon wafer as the conductive silicon sensing transition element, the reference transition element being separated from the reference diaphragm by a fourth dielectric spacer, wherein the reference substrate and the reference diaphragm are arranged to form the parallel plates of a reference capacitor;

the method comprising the steps of;

a. mounting the sensing element to the header; and

b. mounting the reference element to the header, wherein the steps of mounting the sensing element and reference element to the header are performed simultaneously.

11. The method of claim 10, wherein the step of mounting the sensing element to the header includes the step of eutectically bonding the sensing element to the header.

12. The method of claim 10, wherein the step of mounting the reference element to the header includes the step of eutectically bonding the reference element to the header.

13. The method of claim 10, after the steps of mounting the sensing element and reference element to the header, further including the step of mounting an electrical circuit to the header, the electrical circuit being responsive to the capacitance of both the sensing element and reference element.

14. The method of claim 10, before the steps of mounting the sensing element and reference element to the header, further including the step of mounting an electrical circuit to the header, the electrical circuit being responsive to the capacitance of both the sensing element and the reference element.

15. The method of claim 10, further including the step of mounting a protected covering over both the sensing element and the reference element.

16. A method of fabricating a silicon capacitive pressure sensor having a sensing element and a reference element, the sensing element being operable to sense the pressure of a fluid applied thereto and to transduce this fluid pressure to a corresponding electrical capacitance value, the reference element being operable to provide a reference electrical capacitance value, the method comprising the steps of:

a. fabricating a sensing element having an electrically-conductive sensing substrate and an electrically-conductive sensing diaphragm separated by a first dielectric spacer;

b. fabricating a reference element having an electrically-conductive reference substrate and an electrically-conductive reference diaphragm separated by a second dielectric spacer, the sensing element being physically separate from the reference element;

c. mounting the sensing element to a header; and

d. mounting the reference element to the header, wherein the steps of mounting the sensing element and reference element to the header are performed simultaneously.

17. The method of claim 16, wherein the steps of mounting the sensing element and reference element to the header include the step of eutectically bonding the sensing element and reference element to the header.