Anisotropic etching method and apparatus

• US 5,445,709 A
• Filed: 11/19/1993
• Issued: 08/29/1995
• Est. Priority Date: 11/19/1992
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd., Tokyo Electron Limited
• Original Assignee: Hitachi, Ltd., Tokyo Electron Limited, Tokyo Electron Yamanashi Ltd. (Tokyo Electron Limited)
• Inventors: Tomita, Kazuhsi, Nishimura, Eiichi, Tozawa, Shigeki, Ito, Yoshikazu, Kojima, Masayuki, Iimuro, Shunichi, Arasawa, Masashi
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): Goudreau, George A.
• Application Number:
  US08/154,566
• Time in Patent Office: 648 Days
• Field of Search: 156/345, 156/643, 156/662
• US Class Current: 438/729
• CPC Class Codes: H01J 2237/3345 anisotropy
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32522 Temperature
• CPC Class Codes: H01J 37/32532 Electrodes
• CPC Class Codes: H01J 37/32541 Shape
• CPC Class Codes: H01J 37/32724 Temperature

Abstract

A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower electrode. The shower electrode is cooled by a cooling block and causes an effective electrode portion of the shower electrode to have a temperature gradient such that a temperature at the central portion of the effective electrode portion is lower than a temperature at the peripheral portion of the effective electrode portion. The diameter of the shower region is selected to be smaller than the diameter of the wafer by 5 to 25% such that degradation of planar uniformity of a degree of etching anisotropy on the wafer caused by the temperature gradient of the effective electrode portion is compensated for. The diameter of the effective electrode portion is selected to be larger than the size of a wafer by 5 to 35% such that a taper angle of a side wall to be etched formed by etching is set to be 85° to 90°.

Claims

1. An anisotropic etching method using a plasma etching apparatus including

a process chamber,

a first electrode arranged in said process chamber, said first electrode having a support portion for supporting a substrate to be processed,

a second electrode arranged in said process chamber, said second electrode having an opposing portion opposite to said support portion of said first electrode,

a power supply for applying an RF voltage across said first and second electrodes,

exhausting means for exhausting said process chamber,

supplying means for supplying a process gas into said process chamber, said supplying means having a shower region defined by a plurality of holes formed in said opposing portion of said second electrode, and the process gas being supplied onto said substrate supported by said first electrode through the holes, and

cooling means for cooling said second electrode having said opposing portion whose temperature gradient is defined such that a temperature at a peripheral portion of said opposing portion is lower than a temperature at a central portion of said opposing portion,

said method comprising:

selecting a size of said shower region, the size of said shower region being selected to be smaller than a size of said substrate such that degradation of planar uniformity of a degree of etching anisotropy on said substrate caused by the temperature gradient of said opposing portion is compensated for;

setting said apparatus on the basis of the selected size of said shower region, said shower region being arranged such that the center of said shower region is substantially aligned with the center of said substrate when said substrate is supported by said first electrode;

arranging said substrate on said support portion of said first electrode;

exhausting said process chamber;

supplying the process gas through the holes of said shower region;

applying an RF voltage from said power supply across said first and second electrodes to make the process gas into a plasma; and

anisotropically etching said substrate using the plasma;

wherein a temperature difference between the central and peripheral portions of said opposing portion is set to be 2°

to 30°

C., and the size of said shower region is smaller than the size of said substrate by 5 to 25%.

2. A method according to claim 1, wherein said shower region has an outline similar to that of said substrate.

4. A method according to claim 1, wherein an interval between said first and second electrodes is set to be 8 to 15 mm.

5. A method according to claim 4, further including the step of setting the interval between said first and second electrodes after said substrate is placed on said support portion of said first electrode.

6. A method according to claim 4, wherein the process gas contains a fluorocarbon-based gas.

7. A method according to claim 6, wherein the process gas further contains argon.

8. A method according to claim 7, wherein said substrate is a semiconductor wafer having a surface on which an oxide film is formed, and the oxide film is etched.

9. A method according to claim 8, wherein a patterned photoresist is formed on the oxide film, and the oxide film is etched using the photoresist film as a mask to form contact holes.

10. A method according to claim 8, wherein the semiconductor wafer consists of Si, and the oxide film consists of SiO₂.

11. A method according to claim 8, wherein, when the wafer is a 6-inch wafer, said shower region is a substantially circular region having a diameter of 120 to 140 mm.

12. A method according to claim 8, wherein, when the wafer is an 8-inch wafer, said shower region is a substantially circular region having a diameter of 160 to 180 mm.

3. An anisotropically etching method using a plasma etching apparatus including

a process chamber,

a first electrode arranged in said process chamber, said first electrode having a support portion for supporting a substrate to be processed,

a second electrode arranged in said process chamber, said second electrode having an opposing portion opposite to said support portion of said first electrode,

a power supply for applying an RF voltage across said first and second electrodes,

exhausting means for exhausting said process chamber,

supplying means for supplying a process gas into said process chamber, said supplying means having a shower region defined by a plurality of holes formed in said opposing portion of said second electrode, and the process gas being supplied onto said substrate supported by said first electrode through the holes, and

cooling means for cooling said second electrode having said opposing portion whose temperature gradient is defined such that a temperature at a peripheral portion of said opposing portion is lower than a temperature at a central portion of said opposing portion,

said method comprising:

selecting a size of said shower region, the size of said shower region being selected to be smaller than a size of said substrate such that degradation of planar uniformity of a degree of etching anisotropy on said substrate caused by the temperature gradient of said opposing portion is compensated for;

selecting a size of said opposing portion, the size of said opposing portion being selected to be larger than a size of said substrate such that a taper angle of a side wall formed by etching is set to be 85°

to 90°

;

setting said apparatus on the basis of the selected sizes of said shower region and said opposing portion, the centers of said shower region and the opposing region being arranged to be substantially aligned with the center of said substrate when said substrate is supported by said first electrode;

arranging said substrate on said support portion of said first electrode;

exhausting said process chamber;

supplying the process gas through the holes of said shower region;

applying an RF voltage from said power supply across said first and second electrodes to make the process gas into a plasma; and

anisotropically etching said substrate using the plasma;

wherein a temperature difference between the central and peripheral portions of said opposing portion is set to be 2°

to 30°

C., and the size of said shower region is smaller than the size of said substrate by 5 to 25%.

14. A method according to claim 3, wherein said shower region and said opposing portion comprise an outline similar to that of said substrate.

13. A method according to claim 13, wherein the size of said opposing portion is larger than that of a wafer W.

15. A method according to claim 13, wherein an interval between said first and second electrodes is set to be 8 to 15 mm.