Monolithic detector array apparatus

• US 5,446,284 A
• Filed: 01/25/1994
• Issued: 08/29/1995
• Est. Priority Date: 01/25/1994
• Status: Expired due to Term

• Current Assignee: Lockheed Martin Corporation (Martin Marietta Corporation)
• Original Assignee: Lockheed Martin IR Imaging Systems, Inc. (Martin Marietta Corporation)
• Inventors: Iwasa, Shigesato, Butler, Neal R.
• Primary Examiner(s): Hannaher, Constantine
• Assistant Examiner(s): Glick, Edward J.
• Application Number:
  US08/186,653
• Time in Patent Office: 581 Days
• Field of Search: 250/338.3, 250/332, 250/338.4, 250/370.08, 250/349, 257/466, 257/465, 257/73, 257/54
• US Class Current: 250/332
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: H01L 31/035281 Shape of the body
• CPC Class Codes: H10N 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A monolithic detector array apparatus for sensing infrared radiation. An array of semiconductor diode bolometers are fabricated on micromachined thermal isolation structures called microbridges. The detectors are configured in an array and addressed by row and column. Readout circuitry may be optionally incorporated onto a common substrate. The monolithic detector array may be highly integrated, resulting in a low cost and a high performance focal plane array.

Claims

1. An electromagnetic radiation detector comprising:

(a) a substrate having a top surface and a bottom surface; and

(b) a microbridge suspended over the top surface, the microbridge including a diode means for detecting electromagnetic radiation wherein a space is formed below the microbridge by etching a pit beneath the microbridge.

2. The apparatus of claim 1 wherein the substrate comprises a material selected from the group consisting of silicon, gallium arsenide and germanium.

3. The apparatus of claim 1 wherein the substrate is separated from the microbridge by at least two micrometers.

4. The apparatus of claim 1 wherein the diode means is about 0.5 micrometers thick.

5. The apparatus of claim 1 wherein the diode means further comprises a micromachined diode.

6. The apparatus of claim 1 wherein the microbridge comprises a polysilicon microbridge.

7. The apparatus of claim 1 wherein the diode means comprises a polysilicon diode.

8. The apparatus of claim 1 wherein the substrate comprises a silicon substrate.

9. A monolithic detector focal plane array for detecting infrared radiation comprising:

(a) a silicon substrate having a top surface and a bottom surface; and

(b) a plurality of polysilicon microbridges where each polysilicon microbridge is positioned at one end in contact with the silicon substrate and at another end suspended freely above the silicon substrate forming a polysilicon diode.

10. The apparatus of claim 9 wherein the silicon substrate is separated from the plurality of polysilicon microbridges by at least two micrometers.

11. The apparatus of claim 9 wherein the polysilicon diode is less than 1 millimeter thick.

12. The apparatus of claim 9 wherein the polysilicon diode is micromachined above the silicon substrate top surface and thermally isolated.

13. The apparatus of claim 9 wherein a space is formed below the polysilicon diode by etching a pit beneath the polysilicon microbridges.

14. The apparatus of claim 10 wherein the polysilicon diode further comprises a micromachined diode.

15. The apparatus of claim 9 wherein each of the plurality of polysilicon diodes may be accessed individually along either a row or a column.

16. The apparatus of claim 9 wherein each of the plurality of polysilicon diodes may be accessed in groups along either a row or a column.