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Temperature sensor

  • US 5,446,437 A
  • Filed: 12/30/1992
  • Issued: 08/29/1995
  • Est. Priority Date: 01/31/1992
  • Status: Expired due to Term
First Claim
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1. A temperature sensor havinga frame (9) of monocrystalline silicon;

  • a dielectric diaphragm (13) supported by the frame (9);

    a monocrystalline silicon structure (2, 11,

         35) formed on the dielectric diaphragm (13);

    electrical terminal connections (4,

         14) connected to the monocrystalline silicon structure (2, 11,

         35) to obtain electrical measuring outputs representative of the temperature of the dielectric diaphragm (13); and

    wherein the monocrystalline structure comprises a temperature-dependent resistor wherein the monocrystalline structure (2, 11,

         35) is doped with a deep doping material.

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