Temperature sensor
First Claim
Patent Images
1. A temperature sensor havinga frame (9) of monocrystalline silicon;
- a dielectric diaphragm (13) supported by the frame (9);
a monocrystalline silicon structure (2, 11,
35) formed on the dielectric diaphragm (13);
electrical terminal connections (4,
14) connected to the monocrystalline silicon structure (2, 11,
35) to obtain electrical measuring outputs representative of the temperature of the dielectric diaphragm (13); and
wherein the monocrystalline structure comprises a temperature-dependent resistor wherein the monocrystalline structure (2, 11,
35) is doped with a deep doping material.
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Abstract
An improved temperature sensor is designed for the sensitive detection of temperature changes. The temperature sensor includes a frame 9 of monocrystalline silicon and a dielectric diaphragm 13 stretched on it. A monocrystalline silicon structure 35 is disposed on or under the dielectric diaphragm which is used for measuring the temperature. In the course of this, the Seebeck effect, as well as the temperature dependence of the electrical resistance, can be used for detection of any temperature changes.
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Citations
21 Claims
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1. A temperature sensor having
a frame (9) of monocrystalline silicon; -
a dielectric diaphragm (13) supported by the frame (9); a monocrystalline silicon structure (2, 11,
35) formed on the dielectric diaphragm (13);electrical terminal connections (4,
14) connected to the monocrystalline silicon structure (2, 11,
35) to obtain electrical measuring outputs representative of the temperature of the dielectric diaphragm (13); andwherein the monocrystalline structure comprises a temperature-dependent resistor wherein the monocrystalline structure (2, 11,
35) is doped with a deep doping material. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A temperature sensor having
a frame (9) of monocrystalline silicon; -
a dielectric diaphragm (13) supported by the frame (9); a monocrystalline silicon structure (2, 12,
35) formed on the dielectric diaphragm (13);electrical terminal connections (4,
14) connected to the monocrystalline silicon structure (2, 12,
35) to obtain electrical measuring outputs representative of the temperature of the dielectric diaphragm (13); andwherein the monocrystalline structure comprises a Seebeck effect semiconductor wherein the monocrystalline structure (12) is partially located in the area of, and overlaps, the frame (9), the electrical terminal connections are not made of silicon; and one of two connecting points of the terminal connections (4,
14), with the silicon structure (2,
12), is located in the area of the frame (9) and the other is located in the area of the diaphragm (13). - View Dependent Claims (8, 9, 10, 12)
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13. A method to make a temperature sensor having
a frame (9) of monocrystalline silicon; -
a dielectric diaphragm (13) supported by the frame (9); a monocrystalline silicon structure (2, 11,
12) formed on the dielectric diaphragm (13);electrical terminal connections (4,
14) connected to the monocrystalline silicon structure (2, 11,
12) to obtain electrical measuring outputs representative of the temperature of the dielectric diaphragm (13);comprising the steps of providing a monocrystalline silicon wafer (31); inserting oxygen ions in the wafer (31) to form a buried silicon oxide layer (32) therein, to form a monocrystalline portion (31) of the wafer, and leave a monocrystalline layer (33) above the silicon oxide layer (32); shaping or structuring the monocrystalline layer (33) to form a monocrystalline structure (35) above the silicon oxide layer (32); doping said monocrystalline structure (35); providing the monocrystalline structure (35) with terminals (34); and etching a cut-out (37) of the silicon wafer (31) up to the silicon oxide layer (32) while leaving a frame (9) of crystalline wafer material (31), whereby the silicon oxide layer (33) will form the diaphragm (13). - View Dependent Claims (11, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification